SSM5H90ATU Search Results
SSM5H90ATU Datasheets (1)
Toshiba America Electronic Components
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SSM5H90ATU,LF |
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MOSFET N-CH 20V 2.4A UFV | Original | 240.41KB |
SSM5H90ATU Price and Stock
Toshiba America Electronic Components
Toshiba America Electronic Components SSM5H90ATU,LFMOSFET N-CH 20V 2.4A UFV |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSM5H90ATU,LF | Digi-Reel | 573 | 1 |
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SSM5H90ATU,LF | Tape & Reel | 12 Weeks | 3,000 |
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SSM5H90ATU,LF | 3,000 |
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SSM5H90ATU Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
65mmaxContextual Info: SSM5H90ATU Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar SSM5H90ATU 1. Applications • High-Speed Switching 2. Features 1 Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) |
Original |
SSM5H90ATU 65mmax | |
|
Contextual Info: SSM5H90ATU Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar SSM5H90ATU 1. Applications • High-Speed Switching 2. Features 1 Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) |
Original |
SSM5H90ATU |