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    SSI4N60BTU Search Results

    SSI4N60BTU Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SSI4N60BTU
    		Fairchild Semiconductor 600V N-Channel B-FET / Substitute of SSI4N60A Original PDF 654.98KB 9
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    SSI4N60BTU Price and Stock

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    Rochester Electronics LLC SSI4N60BTU

    N-CHANNEL POWER MOSFET
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    DigiKey SSI4N60BTU Bulk 50,126 433
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    onsemi SSI4N60BTU

    SSI4N60BTU
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    Verical () SSI4N60BTU 49,000 601
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    SSI4N60BTU 1,126 601
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    Fairchild Semiconductor Corporation SSI4N60BTU

    Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    Rochester Electronics SSI4N60BTU 50,126 1
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    SSI4N60BTU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SSW4N60B

    Contextual Info: SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		SSW4N60B SSI4N60B SSI4N60B SSI4N60A SSI4N60BTU O-262 PDF