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    SSFDC TC Search Results

    SSFDC TC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SmartMedia Connectors ^ S m a rtM e d ia MCR102 Series Miniature low-profile SMT: 3.0-mm height •Features 1. Conforms to the SSFDC Forum proposal of "SmartMedia" miniature storage media Product development using postage stamp sized miniature memory cards for such items as digital


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    mcr102 PDF

    Contextual Info: TOSHIBA TC58V32ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 Mbit 4 M x 8 bit CMOS NAND E2PROM (4M BYTE Sm artM edia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and


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    tc58v32adc32mbytefdc-22a PDF

    JL-03

    Abstract: ssfdc tc toshiba nand flash 1996 TC58V64ADC ssfdc LVD SCHEMATIC DIAGRAM
    Contextual Info: TOSHIBA TC58V64ADC TO SH IB A M O S DIG ITAL INTEGRATED CIRCUIT TENTATIVE 6 4 - MB IT 8 M X SILICON GATE CM O S 8 BITS CMOS N A N D E2PROM (8 M BYTE S m a rtM e d ia ) DESCRIPTION The TC58V64A is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and


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    tc58v64adc64-mbtc58v64a64-mbit+8528-byte32mbytefdc-22ajl-03ssfdc tctoshiba nand flash 1996ssfdclvd schematic diagram PDF

    ssfdc tc

    Abstract: TC58V32ADC fDC22A a7611
    Contextual Info: T O S H IB A TC58V32ADC TENTATIVE 3 2 M b it TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 4 M X 8 b it SILICON GATE CMOS C M O S N A N D E2 P R O M (4 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and


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    tc58v32adc32mbytefdc-22assfdc tc+2fdc22aa7611 PDF

    Contextual Info: TOSHIBA TENTATIVE TC5816BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 Mbit 2 M x 8 bit CMOS NAND E2PROM (2M BYTE Sm artM edia ) DESCRIPTION The TC5816BDC device is a single 5.0 volt 16 M (17,301,504) bit NAND Electrically Erasable and


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    tc5816bdc32mbytefdc-22 PDF

    TC58NS128ADC

    Contextual Info: TC58NS128ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M x 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128A is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable


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    tc58ns128adc128-mbittc58ns128a528-byte PDF

    69-206

    Abstract: TC58V64ADC
    Contextual Info: TC58V64ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64-MBIT 8M x 8 BITS CMOS NAND E PROM (8M BYTE SmartMedia TM ) DESCRIPTION The TC58V64A is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable


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    tc58v64adc64-mbittc58v64a528-byte+2fdc-22a69-206 PDF

    TC58NS256DC

    Contextual Info: TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 256-MBIT 32M x 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia TM ) DESCRIPTION The TC58NS256 is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable


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    tc58ns256dc256-mbittc58ns256528-byte+1fdc-22a PDF

    SmartMedia Logical Format

    Abstract: TC5816BDC TOSHIBA cmos memory -NAND
    Contextual Info: TOSHIBA TC5816BDC TENTATIVE 16 M b it TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 2 M x 8 b it SILICON GATE CMOS C M O S N A N D E2 P R O M (2 M BYTE S m a r t M e d ia ) DESCRIPTION The TC5816BDC device is a single 5.0 volt 16 M (17,301,504) b it N A N D Electrically Erasable and


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    tc5816bdctc15s132mbytefdc-22+2smartmedia logical formattoshiba cmos memory -nand PDF

    Contextual Info: TOSHIBA TC5816BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 16 M b it 2 M SILICON GATE CMOS x 8 b it CMOS N A N D E2PROM (2M BYTE S m a rtM e d ia ) DESCRIPTION The TC5816BDC device is a single 5.0 volt 16 M (17,301,504) b it N A N D Electrically Erasable and


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    tc5816bdc32mbyte PDF

    TC58NS256ADC

    Contextual Info: TC58NS256ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M x 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256A is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable


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    tc58ns256adc256-mbittc58ns256a528-byte PDF

    69-206

    Abstract: ssfdc TC58V64BDC
    Contextual Info: TC58V64BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 64-MBIT 8M ´ 8 BITS CMOS NAND E PROM (8M BYTE SmartMedia ) DESCRIPTION The TC58V64B is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable


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    tc58v64bdc64-mbittc58v64b528-byte+269-206ssfdc PDF

    TC58NS128DC

    Contextual Info: TC58NS128DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 128-MBIT 16M x 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia TM ) DESCRIPTION The TC58NS128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable


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    tc58ns128dc128-mbittc58ns128528-byte+1fdc-22a PDF

    TC58V64DC

    Abstract: TC58V64
    Contextual Info: TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64-MBIT 8M x 8 BITS CMOS NAND E PROM (8M BYTE SmartMedia TM ) DESCRIPTION The TC58V64 is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 16 pages × 1024 blocks. The device has a 528-byte


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    tc58v64dc64-mbittc58v64528-byte+1fdc-22a PDF

    DIN527

    Abstract: TC58NS512DC
    Contextual Info: TC58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia ) DESCRIPTION The TC58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable


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    tc58ns512dc512-mbittc58ns512528-byte+1din527 PDF

    ssfdc

    Abstract: TC58512DC
    Contextual Info: TOSHIBA TENTATIVE TH58512DC TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 5 1 2-MBIT 32M X 8 BITS CMOS NAND E2PROM (32M BYTE S m artM ed ia ) DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and


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    th58512dcth58512512-mbit528-byte+432mbytefdc-22cssfdctc58512dc PDF

    TH58NS512DC

    Contextual Info: TH58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia TM ) DESCRIPTION The TH58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable


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    th58ns512dc512-mbitth58ns512528-byte+1fdc-22c PDF

    TC6358TB

    Abstract: TX3922 T40 N03 smartmedia controller 1999 AJ08 MROMA14 t40 N06 32KHz PLL PCLR1 AG09
    Contextual Info: TC6358TB TOSHIBA COMPANION CHIP FOR TX3922 PLUM2 1. General Description The PLUM2 is a companion chip for TX3922. The PLUM2 is connected to TX3922 to build advanced portable information terminal systems. Figure 1 shows a block diagram of PLUM2. The PLUM2 consists of a LCD / CRT controller, PCMCIA


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    tc6358tbtx392216bitt40 n03+7smartmedia controller 1999aj08mroma14t40 n0632khz pllpclr1ag09 PDF

    DIN527

    Abstract: TH58NS100DC
    Contextual Info: TH58NS100DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 1-GBIT 128M x 8 BITS CMOS NAND E PROM (128M BYTE SmartMedia ) DESCRIPTION The TH58NS100 is a single 3.3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable


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    th58ns100dcth58ns100528-bytedin527 PDF

    Contextual Info: SmartMediaTM K9D1208V0M-SSB0 Document Title 64M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue April 10th 1999 Advanced Information 0.1 1. Revised real-time map-out algorithm refer to technical notes July 23th 1999


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    k9d1208v0m-ssb0smfdv064 PDF

    I82365

    Contextual Info: TO SH IBA TC6358TB TOSHIBA COMPANION CHIP FOR TX3922 PLUM2 1. General Description The PLUM2 is a companion chip for TX3922. The PLUM2 is connected to TX3922 to build advanced portable information terminal systems. Figure 1 shows a block diagram of PLUM2. The PLUM2 consists of a LCD / CRT controller, PCMCIA


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    tc6358tbtx392216biti82365 PDF

    date code body marking samsung

    Contextual Info: SmartMediaTM K9S5608V0M-SSB0 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue July 14th 1998 Advanced Information 0.1 1. Changed tR Parameter : 7µs Max. → 10µs(Max.) 2. Changed Nop : 10 cycles(Max.) → Main Array 2 cycles(Max.)


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    k9s5608v0m-ssb0smfv03215diadate code body marking samsung PDF

    Contextual Info: SmartMediaTM K9S1608V0B-SSB0 Document Title 2M x 8 Bit SmartMedia TM Revision History Revision No. History Draft Date Remark 0.0 Data Sheet, 1999 April 10th 1999 Preliminary 0.1 Changed device name - SMFV002A -> K9S1608V0B-SSB0 Sep. 15th 1999 Preliminary 0.2


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    k9s1608v0b-ssb0smfv002a PDF

    ISO10918

    Abstract: TDA9991 sdram controller smd transistor A1 3 PIN usb ccd controller ic FXA1022 LFBGA324 PR3001 SAA8122A SAA8122AEL
    Contextual Info: SAA8122A Digital Still Camera Processor ImagIC family Rev. 01 — 20 April 2000 Objective specification 1. Description The DSC SAA8122A is a high performance, low power, single-chip Million Instructions Per Second (MIPS) based signal processor, part of the ImagIC family,


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    saa8122afxa1022tda9991tda9952+7iso10918sdram controllersmd transistor a1 3 pinusb ccd controller iclfbga324pr3001saa8122ael PDF