SS31 DIODE Search Results

SS31

Contextual Info: T O S H IB A 1SS311 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 1 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp = 0.94V : VR = 400V

1SS31

Abstract: 1SS313
Contextual Info: 1SS313 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 3 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

marking AOO

Abstract: 1SS31 1SS311
Contextual Info: TOSHIBA 1SS311 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 1 Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package + 0.5 2.5 -0 .3 : Vp = 0.94V Typ.

Contextual Info: 1SS314 TO SHIBA 1 SS31 4 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.5H (Typ.) +0.2 1.2 5 - 0. IL SYMBOL Vr

1SS314

Contextual Info: 1SS314 TOSHIBA 1 SS31 4 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.50 (Typ.) U nit in mm + 0.2 1.2 5 - 0 . il 0*tH ÖÖ

1SS31

Abstract: 1SS312
Contextual Info: 1SS312 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 2 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 1SS311 1 SS31 1 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp = 0.94V : VR = 400V : trr = 1.5/ j s

1SS314

Contextual Info: 1SS314 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 4 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.50 (Typ.) 0 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)

1SS313

Contextual Info: TOSHIBA 1SS313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 3 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. 2.1 ± 0.1 • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) 1.25±0.1 OO +I 3-

1SS312

Contextual Info: TOSHIBA 1SS312 1 SS31 2 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. 2.1 ± 0.1 • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) 1.25±0.1 OO +I 3-

Contextual Info: 1SS319 T O SH IB A TO SHIBA DIODE 1 SS31 9 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.2 2.9 - 0 .3 • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package

Contextual Info: 1SS313 TOSHIBA 1 SS31 3 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • 2.1 ± 0.1 Small Package. Small Total Capacitance : Ct = 1.2pF Max. Low Series Resistance : rs = 0.6fl (Typ.) 1. 2 5 ± 0.1 3 OO

Contextual Info: TOSHIBA 1SS314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 4 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.5fl (Typ.) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

1SS315

Contextual Info: TOSHIBA 1SS315 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS31 5 UHF BAND MIXER APPLICATIONS. U n i t in m m + 0.2 1.2 5 - 0 . il 0*tH ÖÖ i +I 0 ± 0.05 M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm .1 . 2 +0.2 5 - 0. IL iM O -H in CM Nr— Nh i M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current

Contextual Info: ZENER DIODES, GLASS PACKAGE, GENERAL PURPOSE 400mW N o m in a l Zener V o tu g e M a x im u m Zener im p e d a n t * Test a t I, C u rre n t M a x im u m R e v e r s e N o g «A V. JAaxirtturrt Zener C u r re n t lili 1. Max <mA| BC 0 Sum * B ,C ,D S u ffix

G60N

Abstract: Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 TC1410N 100n00
Contextual Info: AN1256 Microchip’s Power MOSFET Driver Simulation Models Author: Cliff Ellison Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The simulation models for Microchip’s power MOSFET drivers aid in the design and analysis of various circuits

74s532

Abstract: 6D70 74LS series logic gate symbols 74S531
Contextual Info: 8 -B it Latch, 8 -B it Register w ith 3 2 mA Outputs SN 74S531 S N 74S 532 Ordering Information Features/ Benefits • High drive capability Iq l - 32 mA • Three-state outputs drive bus lines • 20-pln SKINNYDIP saves space • 8-bit data path matches byte boundaries

G60N

Abstract: SS31 DIODE DS22062 pspice model TC4423A Tc4421 spice model TC1412 Latch-Up Protection for MOSFET Drivers 439M AN1327 TC1411
Contextual Info: AN1327 Avoiding MOSFET Driver Overstress Author: Ray DiSilvestro Microchip Technology Inc. INTRODUCTION This application note describes how to avoid MOSFET driver overstress. MOSFET drivers are used in many applications to drive the high input capacitance of a

Contextual Info: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 2, 01/2009 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files

Contextual Info: PC8610 Integrated Host Processor Hardware Specifications Datasheet - Preliminary Specification Features • • • • • • • • • • • • • e600 Power Architecture Processor Core PD Maximum 16W at 1.33 GHz VDD = 1.025V ; 13W at 1.066 GHz (VDD = 1.00V)

MPC8610EC

Abstract: MC8610 marking code V6 74 surface mount diode marking ss24 PCI express PCB footprint B12 IC marking code circuit diagram of LCD connection to pic marking code V6 DIODE marking code V6 surface mount diode marking v6 78 diode
Contextual Info: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 0, 10/2008 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files

arco ss32 capacitor

Abstract: diode ssi L28 PCI express PCB footprint AH10 SS33 E6005 SS44 marking SS44 marking code MPC8610 marking code V6 74 surface mount diode MPC8610EC
Contextual Info: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 2, 01/2009 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files