SRF1090 SRF10100 Search Results

SRF1090

Abstract: ITO-220AC SRF1090 SRF10100 SRF10100
Contextual Info: SRF1090 SRF10100 SRF 10100 THUR ITO-220AC 0.190 4.75 0.145(3.55) 0.415(10.54) Plastic package Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction Majority carrier conduction Low power loss,hIgh efficiency High current capability, low forward voltage drop

Contextual Info: SRF1090 SRF10100 SRF 10100 THUR ITO-220AC 0.190 4.75 0.145(3.55) 0.415(10.54) Plastic package Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction Majority carrier conduction Low power loss,hIgh efficiency High current capability, low forward voltage drop

SRF10100

Abstract: SRF10-10 mospec srf10100 ITO-220 SRF1070 SRF1080 SRF1090
Contextual Info: MOSPEC SRF1070 Thru SRF10100 Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation

SRF10100

Abstract: SRF1070 SRF1080 SRF1090
Contextual Info: MOSPEC SRF1070 Thru SRF10100 Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide

SRF10-10

Abstract: SRF10100 SRF1070 SRF1080 SRF1090
Contextual Info: SRF1070 thru SRF10100 Switchmode Full Plastic Dual Schottky Power Rectifiers P b Lead Pb -Free Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

SRF1090CT

Abstract: ITO-220AB SRF1090CT SRF10100CT SRF10100C RF10100CT SRF10-10 RF10100 SRF1090
Contextual Info: S RF1090CT THUR S RF10100CT ITO-220AB 0.190 4.75 0.145(3.55) 0.415(10.54) 0.165(4.25) 0.128(3.25) Max Plastic package Underwriters Laboratory Flammability Classification 94V-0 0.130(3.31) DIA 0.110(2.81) Dual rectifier construction, positive center tap Metal silicon junction