SRAM SAMSUNG Search Results
SRAM SAMSUNG Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 27S07ADM/B |
|
27S07A - Standard SRAM, 16X4 |
|
||
| 27LS07DM/B |
|
27LS07 - Standard SRAM, 16X4 |
|
||
| 27S03/BEA |
|
27S03 - SRAM - Dual marked (860510EA) |
|
||
| 27S03ADM/B |
|
27S03A - 64-Bit, Low Power Biploar SRAM |
|
||
| 27S03ALM/B |
|
27S03A - 64-Bit, Low Power Biploar SRAM |
|
SRAM SAMSUNG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
sram card batteryContextual Info: 1M Byte SRAM CARD KMCJ616512 512K x 16 / 1M x 8_ GENERAL DESCRIPTION July 1993 FEATURES The KM CJ616512 is the industry standard SRAM m em ory card and consists ot Samsung's advanced 32 TSOP 1M bits SRAM devices. • Fast Access Time : 150/200/250ns |
OCR Scan |
KMCJ616512 CJ616512 150/200/250ns 0032H 0034H 0036H 003AH 003CH 003EH 0040H sram card battery | |
6T SRAM
Abstract: SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram
|
Original |
TN-45-17: sheet--MT45W1MW16PD 09005aef8214f7dc/Source: 09005aef821149d2 TN4517 6T SRAM SRAM 6T 16MB SRAM CY62147DV18 K6F1616R6C MT45W1MW16PD TSOP sensor project micron memory sram | |
an5051
Abstract: EP2S60 qa03
|
Original |
||
EP2S60Contextual Info: Interfacing QDRTM-II SRAM with StratixTM, Stratix II and Stratix GX Devices AN4064 Introduction Synchronous static RAM SRAM architectures are evolving to support the highthroughput requirements of communications, networking, and digital signal processing (DSP) systems. The successor to Quad Data Rate (QDR™) SRAM, |
Original |
AN4064 EP2S60 | |
|
Contextual Info: K7A163630B K7A161830B 512Kx36 & 1Mx18 Synchronous SRAM 18Mb Sync. Pipelined Burst SRAM Specification 100TQFP with Pb / Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7A163630B K7A161830B 512Kx36 1Mx18 100TQFP 100-TQFP-1420A | |
AG29
Abstract: ipug45_01.5 transistor w1d transistor w4B SRAM SAMSUNG FC1152 3ah22
|
Original |
ipug45 AG29 ipug45_01.5 transistor w1d transistor w4B SRAM SAMSUNG FC1152 3ah22 | |
|
Contextual Info: K7A803609B K7A801809B 256Kx36 & 512Kx18 Synchronous SRAM 8Mb Sync. Pipelined Burst SRAM Specification 100 TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7A803609B K7A801809B 256Kx36 512Kx18 100-TQFP-1420A | |
|
Contextual Info: K7A803600B K7A801800B 256Kx36 & 512Kx18 Synchronous SRAM 8Mb Sync. Pipelined Burst SRAM Specification 100 TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7A803600B K7A801800B 256Kx36 512Kx18 100-TQFP-1420A | |
K7A321830C
Abstract: K7A323630C
|
Original |
K7A323630C K7A321830C 1Mx36 2Mx18 100TQFP 100-TQFP-1420A K7A321830C K7A323630C | |
|
Contextual Info: K7B323635C K7B321835C Preliminary 1Mx36 & 2Mx18 Synchronous SRAM 36Mb Sync. Burst SRAM Specification 100TQFP with Pb / Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7B323635C K7B321835C 1Mx36 2Mx18 100TQFP 100-TQFP-1420A | |
CY7C13201KV18
Abstract: CY7C13201KV18-300BZXC cy7c13201
|
Original |
CY7C13201KV18 18-Mbit CY7C13201KV18 36-bit CY7C13201KV18-300BZXC cy7c13201 | |
|
Contextual Info: K7K1636T2C K7K1618T2C Preliminary 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7K1636T2C K7K1618T2C 512Kx36 1Mx18 11x15 | |
|
Contextual Info: K7K1636T2C K7K1618T2C Preliminary 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7K1636T2C K7K1618T2C 512Kx36 1Mx18 11x15 | |
|
Contextual Info: K7K3236T2C K7K3218T2C Preliminary 1Mx36 & 2Mx18 DDRII+ CIO b2 SRAM 36Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7K3236T2C K7K3218T2C 1Mx36 2Mx18 11x15 | |
|
|
|||
|
Contextual Info: K7S3236T4C K7S3218T4C Preliminary 1Mx36 & 2Mx18 QDR TM II+ b4 SRAM 36Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7S3236T4C K7S3218T4C 1Mx36 2Mx18 11x15 | |
|
Contextual Info: K7J323682C K7J321882C Preliminary 1Mx36 & 2Mx18 DDR II SIO b2 SRAM 36Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7J323682C K7J321882C 1Mx36 2Mx18 11x15 | |
|
Contextual Info: K7R643682M K7R641882M K7R640982M 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 72Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7R643682M K7R641882M K7R640982M 2Mx36 4Mx18 | |
|
Contextual Info: K7S1636T4C K7S1618T4C Preliminary TM 512Kx36 & 1Mx18 QDR II+ b4 SRAM 18Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7S1636T4C K7S1618T4C 512Kx36 1Mx18 11x15 | |
K7R321882C
Abstract: D0-35 K7R320982C K7R323682C
|
Original |
K7R323682C K7R321882C K7R320982C 1Mx36 2Mx18 K7R321882C D0-35 K7R320982C K7R323682C | |
|
Contextual Info: K7J323682C K7J321882C Preliminary 1Mx36 & 2Mx18 DDR II SIO b2 SRAM 36Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7J323682C K7J321882C 1Mx36 2Mx18 11x15 | |
K7R321882CContextual Info: K7R323682C K7R321882C K7R320982C Preliminary 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7R323682C K7R321882C K7R320982C 1Mx36 2Mx18 | |
K7R643682MF
Abstract: IR 10D 6g
|
Original |
K7R643682M K7R641882M K7R640982M 2Mx36 4Mx18 K7R643682MF IR 10D 6g | |
|
Contextual Info: K7S3236T4C K7S3218T4C Preliminary 1Mx36 & 2Mx18 QDR TM II+ b4 SRAM 36Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. |
Original |
K7S3236T4C K7S3218T4C 1Mx36 2Mx18 11x15 | |
K7A403600B
Abstract: K7A403200B K7A401800B
|
Original |
K7A403600B K7A403200B K7A401800B 128Kx36/x32 256Kx18 K7A403600B K7A403200B K7A401800B | |