SRAM 8T Search Results

23K256

Abstract: 8631 23A256 23K640 256 kbyte Low Power Serial SRAM 6166 ram pic with spi
Contextual Info: Serial SRAM Memory Serial SRAM Memory Family www.microchip.com/SRAM Serial SRAM Memory Do you need more RAM in your application? Does it need to be small, cheap, fast and low power? Are you completing a design and need just a little more volatile memory? Do you need a simple, inexpensive way to add RAM without

Contextual Info: ^ AUSTIN SEMICONDUCTOR, INC. SRAM 256K x 1 SRAM 256K x 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-88725, -88544 • MIL-STD-883, Class B • Radiation tolerant (consult factory) 24- Pin DIP FEATURES • • • • •

S4k marking

Abstract: 64K X 4 SRAM
Contextual Info: •71T5Q2564 883C ri « -1 SRAM M ' S f I !\ Sf- !VIif r >\j J •< ! f »N IN< SRAM 64K x 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS ■ PIN ASSIGNMENT Top View) • SM D 5962-88545, SM D 5962-88681 • M IL-STD -883 FEATURES 24-Pin DIP (D-9) • • •

Contextual Info: TOSHIBA TH50VSF0320/0321BCXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH 50V SF0320/0321BCXB is a mixed containing a package 1,048,576-bit SRAM and a 8,388,608bit flash memory. The SRAM is organized as 131,072 words by 8 bits and the flash memory is

sharp mask rom

Contextual Info: MEMORIES Combination Memories ★ Under development • SRAM +Flash Memory Stacked TSOP Capacity SK configuration 1M SRAM X 4M FLASH X 8 8 LR-S13011 LR-S1302 1MSRAM X 8M FLASH X 8 8 1MSRAM X 16 8M FLASH vA 1O Block) 2M SRAM 1 1 1 1 1 8M FLASH 1 1 1 BM FLASH

Contextual Info: A U S T I N S I M U O N D I ! O H . INC. MILITARY SRAM M T 5 C 6 4 0 4 883C I6K X 4 SRAM 16K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SM D 5962-86859, -89692 • M IL-STD -883, Class B • Radiation tolerant (consult factor)')

TN-58-11

Abstract: 18B-3
Contextual Info: |V |IC =R O N 64K SYNCHRONOUS SRAM M T5 8LC 64K 16/18B3 16/18 SY N C B U R S T SRAM X 64Kx 16/18 SRAM FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9,10 and 11ns Fast OE# access time: 5ns Single +3.3V +10%/-5% pow er supply

K7D803671B

Abstract: K7D801871B-HC25 K7D801871B-HC30 K7D801871B-HC33 K7D803671B-HC25 K7D803671B-HC30 K7D803671B-HC33
Contextual Info: K7D803671B K7D801871B Preliminary 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. Rev. 0.0 History -Initial document. Draft Data July. 2000 Remark Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance

k7d161888m-hc33

Abstract: fcBGA PACKAGE thermal resistance SRAM 8T
Contextual Info: K7D163688M K7D161888M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. Rev. 0.0 History Initial document. Draft Data October. 2000 Remark Advance Rev. 0.1 Add-HC37 part Part Number, Idd, AC Characteristics April. 2001

CIRCUIT SCHEMATIC CAR ECU

Abstract: SF126 ADUC7030 ADuC703x DDI0029G, ARM7TDMI Technical Reference Manual DDI0029G LSB16 adi please confirm the manufacturing date from the serial number recorded on the product
Contextual Info: Integrated Precision Battery Sensor For Automotive ADuC7030/ADuC7033 Preliminary Technical Data FEATURES Memory 32 kbytes Flash/EE memory, 4 kbytes SRAM ADuC7030 96 kbytes Flash/EE memory, 6 kbytes SRAM (ADuC7033) 10 kcycles Flash/EE endurance, 20 years Flash/EE retention

Contextual Info: ADVANCE 128Kx36 & 256Kx18 SRAM KM736S4017 KM718S4017 Document Title 4M DDR SYNCHRONOUS SRAM Revision History Rev. No. Rev. 0.0 Rev.0.5 History Initial document. Correction on the miss print and the package size. -1- Draft Data Remark Aug. 1998 Advance July. 1999

K7D163671B-HC33

Abstract: K7D163671B-HC37 K7D161871B-HC30
Contextual Info: Advance 512Kx36 & 1Mx18 SRAM K7D163671B K7D161871B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3

K7D801871B-HC30

Abstract: 5G13
Contextual Info: Advance 256Kx36 & 512Kx18 SRAM K7D803671C K7D801871C Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. May 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3

Contextual Info: ASi? MT5C6404 883C 16K x 4 SRAM A U S T I N S E M I C O N D U C T O R , INC. 16K X 4 SRAM SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-86859, 5962-89692 • M IL-STD -883 22-Pin DIP FEATURES • H ig h sp eed : 1 2 ,15, 2 0 ,2 5 and 35ns

hc40 3p

Abstract: K7D161871M-HC40 tkxc 153-FCBGA-1422
Contextual Info: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M

ARM7TDMI Technical Reference Manual

Abstract: ADUC7033 cd4580 psm 125 adi please confirm the manufacturing date from the serial number recorded on the product RBU AF
Contextual Info: Integrated Precision Battery Sensor For Automotive ADuC7030/ADuC7033 Preliminary Technical Data FEATURES Memory 32 kbytes Flash/EE memory, 4 kbytes SRAM ADuC7030 96 kbytes Flash/EE memory, 6 kbytes SRAM (ADuC7033) 10 kcycles Flash/EE endurance, 20 years Flash/EE retention

K7D161871M-HC40

Abstract: r1250 535BB1
Contextual Info: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M

KM718S4017H-44

Abstract: KM718S4017H-5
Contextual Info: KM736S4017 KM718S4017 128Kx36 & 256Kx18 SRAM Document Title 4M DDR SYNCHRONOUS SRAM Revision History Rev. No. Rev. 0.0 History Initial document. Draft Data Remark Aug. 1998 Advance Rev.0.5 Correction on the miss print and the package size. July. 1999 Preliminary

K7D803671B-HC33

Abstract: K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37
Contextual Info: K7D803671B K7D801871B 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 -Initial document. July. 2000 Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance Rev. 0.2

K7D161871B-HC30

Abstract: K7D163671B-HC33 K7D163671B-HC37
Contextual Info: Advance 512Kx36 & 1Mx18 SRAM K7D163671B K7D161871B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3

K7D403671M

Abstract: SRAM 8T
Contextual Info: K7D403671M K7D401871M 128Kx36 & 256Kx18 SRAM Document Title 4M DDR SYNCHRONOUS SRAM Revision History Rev. No. Rev. 0.0 History Initial document. Draft Data Remark Aug. 1998 Advance Rev.0.5 Correction on the miss print and the package size. July. 1999 Preliminary

PSD321

Contextual Info: µPSD321X Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM FEATURES SUMMARY The µPSD321X Devices combine a Flash PSD architecture with an 8032 microcontroller core. The µPSD321X Devices of Flash PSDs feature dual banks of Flash memory, SRAM, general

8D-18

Abstract: K7D801871B-HC30
Contextual Info: Advance 256Kx36 & 512Kx18 SRAM K7D803671C K7D801871C Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. May 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3

Contextual Info: µPSD325X Flash Programmable System Devices with 8032 Microcontroller Core and 256Kbit SRAM FEATURES SUMMARY • The µPSD325X devices combine a Flash PSD architecture with an 8032 microcontroller core. The µPSD325X devices of Flash PSDs feature dual banks of Flash memory, SRAM, general