SRAM 6701 Search Results

W968D6DAG

Contextual Info: W968D6DA 256Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.

W967d6hb

Abstract: W967 CRAM 256mb
Contextual Info: W967D6HB 128Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.

Contextual Info: SMJ320C6701 FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS060 − DECEMBER 2007 D Highest Performance Floating-Point Digital D D D D D D 1M-Bit On-Chip SRAM Signal Processor DSP SMJ320C6701 − 7-, 6-ns Instruction Cycle Time − 140-, 167-MHz Clock Rate

Contextual Info: SMJ320C6701 FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS060 − DECEMBER 2007 D Highest Performance Floating-Point Digital D D D D D D 1M-Bit On-Chip SRAM Signal Processor DSP SMJ320C6701 − 7-, 6-ns Instruction Cycle Time − 140-, 167-MHz Clock Rate

Contextual Info: SMJ320C6701 FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS060 − DECEMBER 2007 D Highest Performance Floating-Point Digital D D D D D D 1M-Bit On-Chip SRAM Signal Processor DSP SMJ320C6701 − 7-, 6-ns Instruction Cycle Time − 140-, 167-MHz Clock Rate

Contextual Info: SM320C6201-EP FIXED-POINT DIGITAL SIGNAL PROCESSOR SGUS041A - MAY 2003 - REVISED JANUARY 2004 D 1M-Bit On-Chip SRAM D Controlled Baseline D D D D D D D - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 105°C

A09t

Abstract: CQX 89
Contextual Info: DM2223/2233 Multibank Burst EDO EDRAM 512Kb x 8 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbit DRAM Array for 30ns Access to Any New Page

Contextual Info: SMJ320C6701 FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS060 − DECEMBER 2007 D Highest Performance Floating-Point Digital D D D D D D 1M-Bit On-Chip SRAM Signal Processor DSP SMJ320C6701 − 7-, 6-ns Instruction Cycle Time − 140-, 167-MHz Clock Rate

Contextual Info: SDRAM AS4SD16M16 DOCUMENT TITLE 36Mb Pipelined Sync SRAM Rev # 1.7 1.8 1.9 AS4SD16M16 Rev. 1.7 3/2/09 History Text update on pg 8 &34, AC Spec update Removed “Consult Factory” pg 1 Update Micross Information Release Date March 2009 Status Release March 2009

Contextual Info: SMJ320C6701 FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS060 − DECEMBER 2007 D Highest Performance Floating-Point Digital D D D D D D 1M-Bit On-Chip SRAM Signal Processor DSP SMJ320C6701 − 7-, 6-ns Instruction Cycle Time − 140-, 167-MHz Clock Rate

8857H

Abstract: transistor r10 P2F 28F3204W30 28F320W30 28F6408W30 28F640W30 intel DOC bba 1st transistor code p2f A14RM1
Contextual Info: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM W30 28F6408W30, 28F3204W30, 28F320W30, 28F640W30 Preliminary Datasheet Product Features Flash Performance — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed

Contextual Info: SMJ320C6701 FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS060 − DECEMBER 2007 D Highest Performance Floating-Point Digital D D D D D D 1M-Bit On-Chip SRAM Signal Processor DSP SMJ320C6701 − 7-, 6-ns Instruction Cycle Time − 140-, 167-MHz Clock Rate

Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to

Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to

Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to

Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to

Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to

352-PIN

Abstract: SM320C6701 SM320C6701-EP TMS320C6000
Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to

Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to

Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to

Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to

Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to

Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to

Contextual Info: SM320C6701ĆEP, SM320C6701MECHĆEP FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS042A − MAY 1998 − REVISED APRIL 2004 D Controlled Baseline D D D D D D D D 1M-Bit On-Chip SRAM − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance up to