SRAM 3.3 16BIT Search Results

Contextual Info: A82DL16x4T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit

Contextual Info: A82DL32x4T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit

A82DL1632TG-70UF

Abstract: A82DL1632UG-70UF
Contextual Info: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit

Z80 RAM 2 kb

Abstract: Z8S180 Z84C15 datasheet z80 Z80 CPU z80 microprocessor zilog ctc Z80181 Z80182 Z80L183
Contextual Info: eZ80 Microprocessors eZ80190 Product Brief PB005207-1103 Product Block Diagram • 3.3 V ± 0.3 V supply voltage with 5 V tolerant inputs eZ80190 MPU 8 KB SRAM MACC with 1 KB Dual-Port SRAM 6 PRT 4 CS + WSG • 100-pin LQFP package 2 DMA 32-Bit GPIO ZDI

68HC12 microcontroller

Abstract: AN1153
Contextual Info: PSD834F2V 3.3 V supply Flash PSD for 8-bit MCUs 2 Mbit + 256 Kbit dual Flash memories and 64 Kbit SRAM NOT FOR NEW DESIGN FEATURES SUMMARY • FLASH IN-SYSTEM PROGRAMMABLE ISP PERIPHERAL FOR 8-BIT MCUs ■ 3.3 V±10% SINGLE SUPPLY VOLTAGE ■ 2 MBIT OF PRIMARY FLASH MEMORY (8

DQU12

Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, and Extended Temperatures

MARKING HRA

Abstract: 4kw marking
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 4M (×8/×16) STATIC RAM MB84VD2118XEM-70/MB84VD2119XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance

MARKING HRA

Abstract: SEC MCP 4kw marking
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108XEM-70/MB84VD2109XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance

tsop 48 PIN type2

Abstract: 48BGA MR0A16AMA35
Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD434016AL 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The /¿PD434016AL is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

4kw marking

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50306-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108XEM-70/MB84VD2109XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance

4kw marking

Abstract: MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance

80c196 application note

Contextual Info: PSD4235G2V Flash in-system programmable ISP peripherals for 16-bit MCUs (3.3 V supply) Features PSD provides an integrated solution to 16-bit MCU based applications that includes configurable memories, PLD logic and I/Os: • ■ 64 Kbit SRAM ■ PLD with macrocells

BGA-56P-M02

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50307-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 4M (×8/×16) STATIC RAM MB84VD2118XEM-70/MB84VD2119XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance

4kw marking

Abstract: MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA/EE-85/90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA/EE-85/90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

MR4A16B

Abstract: MR4A16BCMA35 MR4A16BCYS35 54TSOP2 MR4A16BCYS35R 54-TSOP2 MR4A16BMA35R MR4A16BC aecq100
Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

MR4A16BC

Abstract: MR4A16BCMA35 tsop-ii tray 11.76 54-TSOP 54TSOP TSOP 54 tray MR4A16B MR4A MR4A16BM MR4A16BMYS3
Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package

UPSD3233B-40T6

Abstract: JB 2256 L-14026
Contextual Info: UPSD3234A, UPSD3234BV UPSD3233B, UPSD3233BV Flash programmable system devices with 8032 MCU and 64 Kbit SRAM Features • Fast 8-bit 8032 MCU – 40 MHz at 5.0 V, 24 MHz at 3.3 V – Core, 12-clocks per instruction ■ Dual Flash memories with memory management

SA70

Abstract: 18FFFFH
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

SA70

Abstract: 22a17
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V