SR 1060 Search Results

SR1020

Abstract: SR1030 SR1040 SR1050 SR1060 SRA1020 SRA1060
Contextual Info: 3 Q T SR A 1020 TH RU SR A 1060 Voltage Range 20 to 60 Volts Current 10.0 Amperes 10.0 AMPS. SCHOTTKY BARRIER RECTIFIERS 5 4.70 5(4.44) TC)-220A Features .412(10. MAX, I • Low forward voltage drop • High current capability • High reliability • High surge current capability

S10150

Contextual Info: TAIWAN SEMICONDUCTOR s SR S1020 • SR S10150 10.0 AMPS. Surface M ount Schottky Barrier Rectifiers RoHS COMPLIANCE D*PAK . IK .-1/1V.V. .1?WAÙ * Features <> A<> A' 4<> ^ ❖ •v- — í - a a ¡ :i.< c 1 For surface m ounted application Ideal fo r autom ated pick &. place

RESISTOR 10 KILO OHM

Contextual Info: LEAD MOUNTED TYPE HR SURFACE MOUNTED TYPE SR _L _ o bJ “Profit from PRECISIO N ” ultra Type HR/SR resistors: • Your Choice! Thru-hole or surface mount. • Both designs are ideal for precise special-purpose applications from -65°C to 125°C. • 0.1 ohm to 100 Kilohm with standard tolerances to ±0.01 %.

SR1020

Abstract: TO-220AC SR1020 SR1060
Contextual Info: SR1020 SR1060 SR 1060 THUR AC 0.185 4.70 0.154(3.91) 0.415(10.54) Plastic package Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction Majority carrier conduction Low power loss,hIgh efficiency High current capability, low forward voltage drop

Contextual Info: SR1020 SR1060 SR 1060 THUR AC 0.185 4.70 0.154(3.91) 0.415(10.54) Plastic package Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction Majority carrier conduction Low power loss,hIgh efficiency High current capability, low forward voltage drop

511K14D

Abstract: walsin 431k10d 561K14D 431K20D 681k10d 102k14E 431K10D 431K05D 431k07d 561K10D
Contextual Info: Table of Contents w w w. p a s s i v e c o m p o n e n t . c o m Metal Oxide Varistor MOV w w w. p a s s i v e c o m p o n e n t . c o m • HOW TO ORDER SR 241 K 10 Type code Varistor Voltage Tolerance Disk Size SR: Walsin Varistor (DC volt) J:+/-5% (From 180 to 112) K:+/-10%

B1060

Abstract: TO-263AC SRB1060
Contextual Info: SRB1020 THUR SRB1060 SR B1060 TO-263AC Plastic package Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction Majority carrier conduction Low power loss,hIgh efficiency High current capability, low forward voltage drop High temperature soldering guaranteed:

SRF1040

Contextual Info: SRF1060 SRF1060 SR F1020 THUR ITO-220AC 0.190 4.75 0.145(3.55) 0.415(10.54) Plastic package Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction Majority carrier conduction Low power loss,hIgh efficiency High current capability, low forward voltage drop

Contextual Info: SR Series • • • • Features Lifetime:85℃,2000hrs Shorter profile for GR General purpose ■ • • • Recommended Applications AV TV, Video, Audio Monitor/Computer OA/HA/Communication Specifications Items Characteristics ±20% (M) (120Hz,20℃)

oa 1160

Contextual Info: SR • • • • Features Lifetime:85℃,2000hrs Shorter profile for GR General purpose ■ • • • Recommended Applications AV TV, Video, Audio Monitor/Computer OA/HA/Communication Series Specifications Items Characteristics ±20% (M) (120Hz,20℃)

Contextual Info: SR Series • • • • ■ • • • Features Lifetime:85℃,2000hrs Shorter profile for GR General purpose Recommended Applications AV TV, Video, Audio Monitor/Computer OA/HA/Communication Specifications Items Characteristics ±20% (M) (120Hz,20℃)

SRF1020

Abstract: ITO-220AC
Contextual Info: SR F1020 THUR SRF1060 SRF1060 ITO-220AC 0.190 4.75 0.145(3.55) 0.415(10.54) Plastic package Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction Majority carrier conduction Low power loss,hIgh efficiency High current capability, low forward voltage drop

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors

Contextual Info: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • High-power output, high-efficiency : Ie = 13.0 mW/sr min. • Light emitting spectrum suited for silicon photodetectors

ASTM-B-196

Abstract: C17300
Contextual Info: ±.010 .141 SR REV 011 CABLE ENTRY DIAMETER MINI MUM ELECTRICAL Interface Dimensions MIL-STD-348A, 50 Frequency Range GHz DC to 18 310-2_ Recommended Mating Volt Rating (VRMS MAX) 6 Sea Level Fig. 1.1:1_ Torque 7-10 IN-LBS 12.0

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2901L G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : Ie = 9 mW/sr min. • Light emitting spectrum suited for silicon photodetectors • Transparent epoxy resin package

1990- 2335

Abstract: 1990-2335 8X14 31X35
Contextual Info: SR Series RoHS Compliant ALUMINIUM ELECTROLYTIC CAPACITOR FEATURES ◆ ◆ ◆ ◆ High value of CV range Load life of 2000 hours at 85°C Standard series for general purpose Applications for TV, video, audio, office and home appliances, etc. OUTLINE mm D

LNA2901L

Contextual Info: Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 1.0 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr min. Emitted light spectrum suited for silicon photodetectors

LNA2901L

Contextual Info: Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 1.0 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr min. Emitted light spectrum suited for silicon photodetectors

Contextual Info: Panasonic Infrared Light Emitting Diodes LN69 G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : Ie = 3.5 mW /sr min. • Light emitting spectrum suited for silicon photodetectors : A,P = 940 nm (typ.)

LN66F

Abstract: 1000 nm light emitting diode
Contextual Info: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 13.0 mW/sr min. 1.0 For light source of remote control systems 13.5±1.0 11.5±1.0 3.6±0.3

Contextual Info: 1GB, 2GB X64, SR, DR : 240-Pin DDR3 SDRAM UDIMM SDRAM DDR3 128M, 256M X 64 UDIMM Features: •            ROHS Complaint 240 pin unbuffered dual in-line memory module (UDIMM) Fast data transfer rates PC3-10600, PC3-8500 Utilizes DDR3-1066 and DDR3-1333 SDRAM FBGA

TLN119

Contextual Info: TLN119 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN119(F) Lead Free Product Printers, Fax Machines Unit: mm Home Electric Equipment Opto−Electronic Switches • φ3.1mm plastic package • Radiant intensity: IE = 5mW / sr (typ.) • Harf−angle value: θ1 / 2 = ±30°(typ.)

Contextual Info: TLN119 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN119(F) Lead(Pb)-Free Printers, Fax Machines Home Electric Equipment Opto−Electronic Switches Unit: mm • φ3.1mm plastic package • Radiant intensity: IE = 5mW / sr (typ.) • Harf−angle value: θ1 / 2 = ±30°(typ.)