SQJ992EP Search Results
SQJ992EP Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SQJ992EP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 60V 15A POWERPAKSO8 | Original | 211.88KB | |||
SQJ992EP-T1_BE3 | Vishay Siliconix | DUAL N-CHANNEL 60-V (D-S) 175C M | Original | 211.1KB | 12 | ||
SQJ992EP-T2_GE3 | Vishay Siliconix | DUAL N-CHANNEL 60-V (D-S) 175C M | Original | 211.1KB | 12 |
SQJ992EP Price and Stock
Vishay Siliconix SQJ992EP-T2_GE3MOSFET 2N-CH 60V 15A PPAK SO8 |
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SQJ992EP-T2_GE3 | Digi-Reel | 4,911 | 1 |
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Vishay Siliconix SQJ992EP-T1_BE3MOSFET 2N-CH 60V 15A PPAK SO8 |
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SQJ992EP-T1_BE3 | Cut Tape | 2,990 | 1 |
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Vishay Siliconix SQJ992EP-T1_GE3MOSFET 2N-CH 60V 15A PPAK SO8 |
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SQJ992EP-T1_GE3 | Cut Tape | 1,872 | 1 |
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Vishay Intertechnologies SQJ992EP-T1_GE3Transistor MOSFET Array Dual N-CH 60V 15A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ992EP-T1_GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ992EP-T1_GE3 | Reel | 3,000 | 19 Weeks | 3,000 |
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SQJ992EP-T1_GE3 | 21,994 |
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SQJ992EP-T1_GE3 | 20 Weeks | 3,000 |
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Vishay Intertechnologies SQJ992EP-T1_BE3Transistor MOSFET Array Dual N-Channel 60V 15A 8-Pin PowerPAK SO - Tape and Reel (Alt: SQJ992EP-T1_BE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ992EP-T1_BE3 | Reel | 19 Weeks | 3,000 |
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SQJ992EP-T1_BE3 |
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SQJ992EP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SQJ992EP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQJ992EP AN609, 3952m 5454u 9919m 6133u 3252m 5351m 8815m 04-Feb-13 | |
Contextual Info: SQJ992EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.0562 RDS(on) () at VGS = 4.5 V 0.0745 ID (A) per leg 8 Configuration Dual PowerPAK |
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SQJ992EP AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SQJ992EP www.vishay.com Vishay Siliconix Dual N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQJ992EP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
sq4435
Abstract: SQP120N10-09
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VMN-PL0469-1505 sq4435 SQP120N10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 |