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SPW351K0J
|
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Meggitt CGS
|
High Power Resistors - wirewound square ceramic cased |
Original |
PDF
|
84.43KB |
2 |
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SPW351K0K
|
|
Meggitt CGS
|
High Power Resistors - wirewound square ceramic cased |
Original |
PDF
|
84.43KB |
2 |
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SPW351R0J
|
|
Meggitt CGS
|
High Power Resistors - wirewound square ceramic cased |
Original |
PDF
|
84.43KB |
2 |
|
SPW351R0K
|
|
Meggitt CGS
|
High Power Resistors - wirewound square ceramic cased |
Original |
PDF
|
84.43KB |
2 |
|
SPW35N60C3
|
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Infineon Technologies
|
N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 100.0 mOhm; ID(max) @ TC=25°C: 34.6 A; IDpuls (max): 103.8 A; |
Original |
PDF
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774.15KB |
12 |
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SPW35N60C3
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|
Infineon Technologies
|
for lowest Conduction Losses & fastest Switching |
Original |
PDF
|
232.97KB |
10 |
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SPW35N60C3
|
|
Infineon Technologies
|
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 34.6A TO-247 |
Original |
PDF
|
|
11 |
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SPW35N60C3FKSA1
|
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 34.6A TO-247 |
Original |
PDF
|
760.85KB |
|
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SPW35N60CFD
|
|
Infineon Technologies
|
N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 118.0 mOhm; ID(max) @ TC=25°C: 34.0 A; IDpuls (max): 85.0 A; |
Original |
PDF
|
743.53KB |
13 |
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SPW35N60CFD
|
|
Infineon Technologies
|
CoolMOS Power Transistor |
Original |
PDF
|
387.52KB |
12 |
|
SPW35N60CFDFKSA1
|
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 34.1A TO-247 |
Original |
PDF
|
944.18KB |
|
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SPW35R10J
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|
Meggitt CGS
|
High Power Resistors - wirewound square ceramic cased |
Original |
PDF
|
84.43KB |
2 |
|
SPW35R10K
|
|
Meggitt CGS
|
High Power Resistors - wirewound square ceramic cased |
Original |
PDF
|
84.43KB |
2 |