SPIN AMPLIFIER Search Results
SPIN AMPLIFIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TA75W01FU |
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Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505 | Datasheet | ||
| TC75S67TU |
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Operational Amplifier, 2.2V to 5.5V, Low Noise type:VNI=6nV/√Hz@1kHz, SOT-353F | Datasheet | ||
| TC75S102F |
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Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 | Datasheet | ||
| TC75S103F |
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Operational Amplifier, 1.8V to 5.5V, I/O Rail to Rail, IDD=100μA, SOT-25 | Datasheet | ||
| TC75S51F |
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Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353 | Datasheet |
SPIN AMPLIFIER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Agilent Hard Disk Read/Write Test System E5023A Electronics Package E5010C Split Axis Spin Stand E5013A Combined Axis Spin Stand A Head Test System for Today and Tomorrow State-of-the-art heads require a state-of-the-art test system The aerial density of hard disk drives HDD increases about 60% every year. |
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e5023ae5010ce5013a5980-2820en | |
MBT3904DW1T1
Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1
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mbt3904dw1t1mbt3906dw1t1mbt3946dw1t123/sot+2 | |
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Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications |
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mbt3904dw1t1mbt3906dw1t1mbt3946dw1t123/sot | |
MBT3904DW1T1GContextual Info: MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in |
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mbt3904dw1t1gmbt3904dw2t1gsmbt3904dw1t1got-23/sot-323+4 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistor LMBT3906DW1T1G 6 The LMBT3906DW1T1 device isa spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 |
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lmbt3906dw1t1glmbt3906dw1t123/sotot-363 | |
NST3946DP6T5GContextual Info: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 |
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nst3946dp6t5got-23/sot-323/sot-563ot-963nst3946dp6/d | |
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Contextual Info: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 |
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nst3946dp6t5g23/sot323/sotnst3946dp6/d | |
1N916
Abstract: LMBT3906DW1T1 LMBT3906DW1T1G NF 723
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lmbt3906dw1t1glmbt3906dw1t123/sotot-363+6 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor LMBT3904DW1T1G The LMBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 |
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lmbt3904dw1t1glmbt3904dw1t123/sotot-363+1 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistor LMBT3906DW1T1G 6 The LMBT3906DW1T1 device isa spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 |
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lmbt3906dw1t1glmbt3906dw1t123/sotot-363+1 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor LMBT3904DW1T1G The LMBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 |
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lmbt3904dw1t1glmbt3904dw1t123/sotot-363 | |
NPN PNP sot-563
Abstract: NST3946DP6T5G
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nst3946dp6t5got-23/sot-323/sot-563ot-963nst3946dp6/d+1 | |
LMBT3904DW1T1
Abstract: 1N916 LMBT3904DW
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lmbt3904dw1t123/sotot-363sc-88/sot-363+3 | |
LMBT3906DW1T1
Abstract: marking a2 ic 1N916
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lmbt3906dw1t123/sotot-363sc-88/sot-363+3 | |
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Contextual Info: MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in |
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mbt3904dw1t1gmbt3904dw2t1gsmmbt3904dw1tg23/sot+2 | |
ma marking sot-363Contextual Info: MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 |
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mbt3946dw1t1gsmbt3946dw1t1got-23/sot-323ot-363-6+3 | |
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Contextual Info: MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 |
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mbt3946dw1t1gsmbt3946dw1t1g23/sotmbt3946dw1t1/d | |
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Contextual Info: NST3904DXV6T1, NSVT3904DXV6T1, NST3904DXV6T5, SNST3904DXV6T5 Dual General Purpose Transistor http://onsemi.com The NST3904DXV6T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563 |
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nst3904dxv6t1nsvt3904dxv6t1nst3904dxv6t5snst3904dxv6t5+2 | |
LMBT3904DW1T1G
Abstract: 1N916 LMBT3904DW1T1
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lmbt3904dw1t1glmbt3904dw1t123/sotot-363+2 | |
SOT-1123Contextual Info: LESHAN RADIO COMPANY, LTD. PNP General Purpose Transistor LNST3906F3T5G TheLNST3906F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in |
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lnst3906f3t5gthelnst3906f3t5got-23/sot-323/sot-563/sot-963ot-1123+1 | |
marking CODE 5M pnp amg
Abstract: SOt323 marking code 6X NPN PNP sot-563 NST847BPDP6T5G 527AD marking AMG marking CODE 5M pnp
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nst847bpdp6t5got-23/sot-323/sot-563ot-963nst847bpdp6/d+6 | |
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Contextual Info: NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 |
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nst847bpdp6t5g23/sot323/sotnst847bpdp6/d | |
1N916
Abstract: MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
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mbt3904dw1t1/dmbt3904dw1t1mbt3906dw1t1mbt3946dw1t1+2 | |
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Contextual Info: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 |
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nst3946dp6t5g23/sot323/sotnst3946dp6/d | |