|
SPI08N50C3
|
|
Infineon Technologies
|
N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 650.0 mOhm; ID(max) @ TC=25°C: 8.0 A; IDpuls (max): 22.8 A; |
Original |
PDF
|
740.06KB |
14 |
|
SPI08N50C3
|
|
Infineon Technologies
|
Cool MOS Power Transistor |
Original |
PDF
|
268.22KB |
13 |
|
SPI08N50C3HKSA1
|
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 7.6A TO-262 |
Original |
PDF
|
727.71KB |
|
|
SPI08N50C3XK
|
|
Infineon Technologies
|
N-CHANNEL POWER MOSFET |
Original |
PDF
|
744.41KB |
|
|
SPI08N50C3XKSA1
|
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 560V 7.6A TO-262 |
Original |
PDF
|
727.71KB |
|
|
SPI08N80C3
|
|
Infineon Technologies
|
N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 800.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 650.0 mOhm; ID(max) @ TC=25°C: 8.0 A; IDpuls (max): 24.0 A; |
Original |
PDF
|
363.41KB |
10 |
|
SPI08N80C3
|
|
Infineon Technologies
|
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Original |
PDF
|
272.64KB |
13 |
|
SPI08N80C3XKSA1
|
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 8A TO-262 |
Original |
PDF
|
460.5KB |
|
