| SPI08N50C3 |
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Infineon Technologies
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 650.0 mOhm; ID(max) @ TC=25°C: 8.0 A; IDpuls (max): 22.8 A; |
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740.06KB |
14 |
| SPI08N50C3 |
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Infineon Technologies
|
Cool MOS Power Transistor |
Original |
PDF
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268.22KB |
13 |
| SPI08N50C3HKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 7.6A TO-262 |
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PDF
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727.71KB |
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| SPI08N50C3XK |
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Infineon Technologies
|
N-CHANNEL POWER MOSFET |
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PDF
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744.41KB |
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| SPI08N50C3XKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 560V 7.6A TO-262 |
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PDF
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727.71KB |
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| SPI08N80C3 |
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Infineon Technologies
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 800.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 650.0 mOhm; ID(max) @ TC=25°C: 8.0 A; IDpuls (max): 24.0 A; |
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363.41KB |
10 |
| SPI08N80C3 |
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Infineon Technologies
|
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
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PDF
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272.64KB |
13 |
| SPI08N80C3XKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 8A TO-262 |
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460.5KB |
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