SPECIFICATIONS OF MOSFET Search Results

4n33 schematic

Abstract: BABT CR 0090 triac driver opto moc3021 4n40 opto coupled scr dual channel opto triac OPTOCOUPLER 4n35 with mosfets moc3020 OPTO hma121 PHOTO SCR OPTOCOUPLER 4n35 optocoupler
Contextual Info: Optocouplers and Solid State Relays Analog Discrete Interface & Logic Optoelectronics April 2002 • • • • • • Schematics and Specifications Package Specifications PCB Layouts Carrier Tape Specifications Safety Agency Certifications Glossary of Terms

Contextual Info: TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: TSD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2921

Contextual Info: TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2904

Contextual Info: TSD2904 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

SGS-THOMSON

Abstract: TSD2922 M176
Contextual Info: TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2903

Contextual Info: TSD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Ultrasonic welding circuit diagram

Abstract: washing machine service manual FOR sharp circuit diagram of sanyo washing machine ae503450p8h circuit diagram capacity discharge ignition S-8261 washing machine service manual precision scale pcm circuit S8261ABJMD-G3J
Contextual Info: Specifications LI Polymer Rechargeable Battery Part Number: BT-AE-PCM308-3.0-A Central Components Manufacturing, 440 Lincoln Blvd., Middlesex, NJ 08846 Ph:732-469-5720 Fx: 732-469-1919 Product Specifications 1. Date of 1st Issue: 2006-10-05 2. Date of Revision 1st :

R5402N

Abstract: Ricoh R5402N163KD r5402 R5402N163KD Rechargeable RECHARGEABLE BATTERY FTD2017 BT-AE-PCM318-3 Ricoh pcm circuit
Contextual Info: Specifications Li Polymer Rechargeable Battery Part Number: BT-AE-PCM318-3.0-A Central Components Manufacturing, 440 Lincoln Blvd., Middlesex, NJ 08846 Ph:732-469-5720 Fx: 732-469-1919 Product Specifications 1. 2. 3. Date of 1st Issue: 2007-01-08 Date of Revision 1st :

Contextual Info: TSD2902 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2921

Abstract: SGS-THOMSON SGS-Thomson Transistors
Contextual Info: TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: P*V series, thermal sensitive chip attenuators. These thermo-variable attenuators have opposite temperature characteristics of GaAs MOSFET amplifiers and compensate the temperature caused gain fluctuation of such amplifiers. RoHS compliant SPECIFICATIONS 0.65 0.70 0.65

mosfet equivalent book

Abstract: 1220S PBV1632S PXV1220S
Contextual Info: P*V series, thermal sensitive chip attenuators. These thermo-variable attenuators have opposite temperature characteristics of GaAs MOSFET amplifiers and compensate the temperature caused gain fluctuation of such amplifiers. RoHS compliant SPECIFICATIONS 0.65 0.70 0.65

db 3202

Abstract: 1220S PBV1632S PXV1220S
Contextual Info: P*V series, thermal sensitive chip attenuators. These thermo-variable attenuators have opposite temperature characteristics of GaAs MOSFET amplifiers and compensate the temperature caused gain fluctuation of such amplifiers. RoHS compliant SPECIFICATIONS 0.65 0.70 0.65

mosfet equivalent book

Abstract: db 3202
Contextual Info: P*V series, thermal sensitive chip attenuators. These thermo-variable attenuators have opposite temperature characteristics of GaAs MOSFET amplifiers and compensate the temperature caused gain fluctuation of such amplifiers. SPECIFICATIONS 0.65 0.70 0.65 Ϯ0.35 Ϯ0.2 Ϯ0.35

mosfet equivalent book

Contextual Info: P*V series, thermal sensitive chip attenuators. These thermo-variable attenuators have opposite temperature characteristics of GaAs MOSFET amplifiers and compensate the temperature caused gain fluctuation of such amplifiers. SPECIFICATIONS 0.65 0.70 0.65 Ϯ0.35 Ϯ0.2 Ϯ0.35

mosfet equivalent book

Contextual Info: P*V series, thermal sensitive chip attenuators. These thermo-variable attenuators have opposite temperature characteristics of GaAs MOSFET amplifiers and compensate the temperature caused gain fluctuation of such amplifiers. SPECIFICATIONS 0.65 0.70 0.65 Ϯ0.35 Ϯ0.2 Ϯ0.35

IRF640

Abstract: IRF640 equivalent IRF640 mosfet IRF640 applications note power MOSFET IRF640 IRF640 n-channel MOSFET
Contextual Info: DC COMPONENTS CO., LTD. IRF640 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS ON = 0.18 Ohm ID = 18 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

MOSFET IRF740 as switch

Abstract: IRF740 irf740 mosfet power MOSFET IRF740 transistor equivalent irf740
Contextual Info: DC COMPONENTS CO., LTD. IRF740 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 400 Volts RDS on = 0.55 Ohm ID = 10 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

Application of irf840

Abstract: transistor irf840 datasheet irf840 mosfet irf840 power supply IRF840
Contextual Info: DC COMPONENTS CO., LTD. IRF840 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 500 Volts RDS on = 0.8 Ohm ID = 8.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

power supply IRF830 APPLICATION

Abstract: power MOSFET IRF830 irf830 datasheet IRF830
Contextual Info: DC COMPONENTS CO., LTD. IRF830 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 500 Volts RDS on = 1.5 Ohms ID = 4.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

IRF730

Contextual Info: DC COMPONENTS CO., LTD. IRF730 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 400 Volts RDS ON = 1.0 Ohm ID = 5.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

irf630

Abstract: mosfet irf630
Contextual Info: DC COMPONENTS CO., LTD. IRF630 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS ON = 0.4 Ohm ID = 9.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

Contextual Info: SGS-THOMSON sUICT»M SS TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to