SOURCE 24V Search Results

4501ss

Abstract: rd15 WTK4501 RD 15 4501s
Contextual Info: WTK4501 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 30 VOLTAGE DRAIN CURRENT 7 AMPERES 7,8 DRAIN P b Lead Pb -Free 2 GATE 5,6 DRAIN P-CHANNEL DRAIN SOURCE VOLTAGE -30 VOLTAGE DRAIN CURRENT -5.3 AMPERES 3 SOURCE 1 1 SOURCE Features:

L3404HV

Abstract: l3404 TLE4242G TLE4242 HV9911 12v led resistor chart AV02-0325EN 12v 1A LED driver MAX16800 lumidrives
Contextual Info: Driving Avago RGB LED light source module and white LED light source module Application Note 5307 Introduction The RGB light source module consist of the following parts: a ADJD-MJ50, b) ADJD-MJ51, c) ADJD-MJ60 and d) ADJD-MJ61. The RGB LED light source module consist of four LED

Contextual Info: DIP SMD Type DIP SMDType Type Type IC Transistors IC Product specification KHP45N03 LT TO220 Features Low on-state resistance Fast switching. 1Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage

IRF7101

Abstract: MS-012AA
Contextual Info: IRF7205PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

Contextual Info: SMDType DIP Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KHP45N03 LT TO220 Features Low on-state resistance Fast switching. 1Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage

Contextual Info: IRF7303QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

IRF7101

Contextual Info: IRF7306PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

EIA-541

Abstract: F7101 IRF7101 MS-012AA
Contextual Info: IRF7303PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

marking vap

Abstract: AC-DC Battery Charger -Constant Current with volt
Contextual Info: LM2601 Adapter Interface Circuit General Description The Adapter Interface Circuit AIC is used to sense the presence of an external power source for a portable computer. It notifies the computer if a source is present and indicates if the source is appropriate for charging battery

power adapter circuit diagram

Abstract: ac notebook adapter circuit National Semiconductor car lead battery charger LM2601 LM2601MTC LM2601MTCX MTC14 Standard Notebook Adapter car battery charger
Contextual Info: LM2601 Adapter Interface Circuit General Description The Adapter Interface Circuit AIC is used to sense the presence of an external power source for a portable computer. It notifies the computer if a source is present and indicates if the source is appropriate for charging battery

power adapter circuit diagram

Abstract: TSSOP 14 Package LM2601MTCX LM2601MTC circuit diagram for electronic projects marking vap
Contextual Info: LM2601 Adapter Interface Circuit General Description Features The Adapter Interface Circuit AIC is used to sense the presence of an external power source for a portable computer. It notifies the computer if a source is present and indicates if the source is appropriate for charging battery packs

RES100N03

Contextual Info: RES100N03 Transistors Switching 30V, 10A RES100N03 +0.1 0.5− ROHM : SOP8 zEquivalent circuit (8) (7) (6) (5) (4) (8) (7) (6) (5) (1) (2) (3) (4) ∗ (1) (2) (3) ∗Gate Protection Diode. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain

1769-ob32 user manual

Abstract: 1769-OB32 transistor manual substitution FREE 1769OB32 1769 ECR wiring diagram Allen-Bradley 1769-OA16 1769 wiring diagram 1769 single slot dimension 1769-UM007C-EN-P 1769-ECR
Contextual Info: Installation Instructions Compact 32-point Solid-state 24V dc Source Output Module Catalog Number 1769-OB32 Use this document as a guide when installing a Compact 32-point solid-state 24V dc source output module. Topic Page Important User Information 2

1769-IQ32

Abstract: 1769-iq32 user manual ROCKWELL 1769-IQ32 1769-IQ32 TERMINALS 1769-ECR Terminal Block 1769-RTBN18 1769IQ32 1769-UM001A-US-P Allen-Bradley 1769-Iq32 ROCKWELL 1769-ECR
Contextual Info: Installation Instructions Compact 32-point 24V dc Sink/Source Input Module Catalog Number 1769-IQ32 Use this document as a guide when installing a Compact 32-point 24V dc sink/source input module. Topic Page Important User Information 2 Module Description

SN75325N

Abstract: SN55325J SN75325 SN75325J FRO 24N 75325 SN55325 SN55325W
Contextual Info: Am55/75325 Memory Drivers Distinctive Characteristics • • • 600m A output source/sink capability O utput short circuit protection ^ ^ T w o source outputs and two sink outputs Source strobe input and sink strobe input 24 volt output range 100% reliability assurance testing in compliance with

Contextual Info: RS1E300GN Nch 30V 30A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 2.2mW RDS(on) at 4.5V (Max.) 2.8mW ID 30A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 2) High Power Package (HSOP8). (1) Source (2) Source (3) Source (4) Gate

Contextual Info: RQ3E180GN Nch 30V 18A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 4.3mW RDS(on) at 4.5V (Max.) 5.5mW ID 18A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

Contextual Info: RQ3E120GN Nch 30V 12A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.8mW RDS(on) at 4.5V (Max.) 11.8mW ID 12A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Package (HSMT8).

Contextual Info: RQ3E100GN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 11.7mW RDS(on) at 4.5V (Max.) 15.7mW ID 10A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

Contextual Info: RS1E200GN Nch 30V 20A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 4.6mW RDS(on) at 4.5V (Max.) 6.1mW ID 20A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 2) High Power Package (HSOP8). (1) Source (2) Source (3) Source (4) Gate

Contextual Info: TSM600P03CS 30V P-Channel Power MOSFET SOP-8 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS -30 V RDS on (max) VGS = -10V 60 VGS = -4.5V 90 Qg Ordering Information

Contextual Info: RQ3E150GN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 6.1mW RDS(on) at 4.5V (Max.) 8.1mW ID 15A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

Contextual Info: RS1E320GN Nch 30V 32A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 1.9mW RDS(on) at 4.5V (Max.) 2.4mW ID 32A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Package (HSOP8).

Contextual Info: RQ3E080GN Nch 30V 8A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 16.7mW RDS(on) at 4.5V (Max.) 22.8mW ID 8A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Package (HSMT8).