SOT96- 1 Search Results

PHK5NQ15T

Contextual Info: PHK5NQ15T TrenchMOS standard level FET Rev. 01 — 20 January 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK5NQ15T in SOT96-1 SO8 .

transistor bd139

Abstract: philips power transistor bd139 BD139 smd transistor zi
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency

PHM25NQ10T

Abstract: MGX371
Contextual Info: PHM25NQ10T TrenchMOS standard level FET Rev. 03 — 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • SOT96 SO-8 footprint compatible

PBLS2003S

Contextual Info: PBLS2003S 20 V PNP BISS loadswitch Rev. 01 — 3 August 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)

transistor BP 109

Abstract: Si4420DY
Contextual Info: Si4420DY N-channel enhancement mode field-effect transistor Rev. 01 — 28 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4420DY in SOT96-1 SO8 .

MS-012AA

Abstract: Si4410DY
Contextual Info: Si4410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 .

Si4416DY

Abstract: SOT96- 1
Contextual Info: Si4416DY N-channel enhancement mode field-effect transistor Rev. 01 — 05 June 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4416DY in SOT96-1 SO8 .

03ac29

Abstract: HZG336 MS-012AA PHN103T
Contextual Info: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .

si4800

Abstract: 03af85 MS-012AA Si4800 philips
Contextual Info: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .

Contextual Info: SO 8 ACT102H-600D AC Thyristor power switch 20 August 2014 Product data sheet 1. General description An AC Thyristor power switch with very high noise immunity and over-voltage protection configured for negative gate triggering in a SOT96-1 SO8 small surface-mountable

SOT96- 1

Contextual Info: Philips Semiconductors Product specification Dual P-channel enhancement mode MOS transistor PHP225 PINNING - SOT96-1 S08 FEATURES • High-speed switching PIN SYM BOL DESCRIPTION • No secondary breakdown 1 S1 source 1 • Very low on-resistance. 2 9i gate 1

PHM30NQ10T

Contextual Info: PHM30NQ10T TrenchMOS standard level FET Rev. 02 — 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • SOT96 SO-8 footprint compatible

PHK4NQ20T

Contextual Info: PHK4NQ20T TrenchMOS standard level FET Rev. 01 — 20 January 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK4NQ20T in SOT96-1 SO8 .

PHK28NQ03LT

Abstract: max 11367
Contextual Info: PHK28NQ03LT TrenchMOS logic level FET Rev. 02 — 10 April 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK28NQ03LT in SOT96-1 SO8 .

PSMN038-100K

Contextual Info: PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.

MS-012AA

Abstract: PHK12NQ03LT
Contextual Info: PHK12NQ03LT TrenchMOS logic level FET Rev. 01 — 22 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1technology. Product availability: PHK12NQ03LT in SOT96-1 SO8 .

Si9410DY

Contextual Info: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .

Contextual Info: Wave soldering footprint Footprint information for wave soldering of SO8 package SOT96-1 1.20 2x enlarged solder land 0.3 (2×) 0.60 (6×) 1.30 4.00 6.60 7.00 1.27 (6×) 5.50 preferred transport direction during soldering solder land solder resist occupied area

PBLS2001S

Contextual Info: PBLS2001S 20 V PNP BISS loadswitch Rev. 01 — 3 August 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)

PSMN006-20K

Contextual Info: PSMN006-20K TrenchMOS ultra low level FET Rev. 01 — 30 May 2002 Product data 1. Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package. Product availability:

SOT96

Contextual Info: SO 8 SOT96-1 Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 23 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal

Contextual Info: PBSS4041SN 60 V, 6.7 A NPN/NPN low VCEsat BISS transistor Rev. 2 — 18 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 18 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

250 B 340 smd Transistor

Abstract: 4032SP
Contextual Info: PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.