MARKING N93
Abstract: 4446 FCX493 FCX593 fcx493ta
Contextual Info: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.
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FCX493
FCX593
FCX493TA
FCX493TC
MAX00
MARKING N93
4446
FCX493
FCX593
fcx493ta
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FR4 pcb
Abstract: copper wire 2.5mm
Contextual Info: Thermal Data SOT223 3W Derating SOT223 3W Devices SOT223 j-c=12°C/W Typical j-a=41.7°C/W Maximum Mounted on a FR4 p.c.b. of 50mm x 50mm 2"x2" connected using 25mm x 0.5mm copper wire SOT89 1Watt Devices SOT89 (1W) Derating SOT89 j-a=125°C/W Maximum Mounted on a 15 x 15 x 0.6 mm alumina ceramic substrate
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OT223
OT223
MLP322
MLP322
MLP522
MLP522
SUPER323TM
FR4 pcb
copper wire 2.5mm
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TK10485M
Abstract: TK16203U TK14521 TK16202U MFP-12 tk14521m TK10489M TK10485 TK10492 MFP36
Contextual Info: 27 INTEGRATED CIRCUITS TOKO U. Kl M ï f i ICs for Communications Equipment üimfflic Surface Mounting Taping 9 .5 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • • FM IF system IC for use In cordless phones, amateur radios up to
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TK16201U
1000MHz
270MHz
TK10668Q
TK10485M
TK16203U
TK14521
TK16202U
MFP-12
tk14521m
TK10489M
TK10485
TK10492
MFP36
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BCV28
Abstract: BCV29 FMMT38A
Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BCV29 ISSUE 4 – JANUARY 1996 COMPLEMENTARY TYPE – BCV28 PARTMARKING DETAIL – EF C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage
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BCV29
BCV28
100mA,
500mA,
20MHz
FMMT38A
BCV28
BCV29
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sot89
Abstract: NPN SOT89 FMMTA42 SXTA42 SXTA92 DSA003720
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 JANUARY 1996 SXTA42 ✪ COMPLEMENTARY TYPE SXTA92 PARTMARKING DETAIL SID C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage
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SXTA42
SXTA92
20MHz
FMMTA42
sot89
NPN SOT89
SXTA42
SXTA92
DSA003720
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sot89
Abstract: BST16 FMMT458 NPN SOT89 BST39 DSA003681
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST39 ✪ ISSUE 4 – JUNE 1996 FEATURES * Fast Switching * High hFE. C COMPLEMENTARY TYPE – BST16 PARTMAKING DETAIL – AT1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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BST39
BST16
FMMT458
sot89
BST16
NPN SOT89
BST39
DSA003681
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PNP TRANSISTOR SOT89
Abstract: BST15 BST40 FMMTA92 DSA003681 fmmt-a
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST15 ✪ ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE – BST40 PARTMARKING DETAIL – BT1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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BST15
BST40
-175V
-150V
-50mA,
-30mA,
-10mA,
30MHz
FMMTA92
PNP TRANSISTOR SOT89
BST15
BST40
DSA003681
fmmt-a
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BSR33
Abstract: BSR43
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR33 ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSR43 PARTMARKING DETAILS – BR4 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO
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BSR33
BSR43
Vo15mA*
-500mA,
-50mA*
-150mA,
-15mA*
-100mA,
BSR33
BSR43
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a1701
Abstract: MMA710
Contextual Info: MMA710 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA710 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 4 GHz Broadband Gain Block
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MMA71
MMA710
A17017
a1701
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FMMT551
Abstract: BSR30 BSR40
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR30 ✪ ISSUE 4 – JUNE 1996 COMPLEMENTARY TYPE – BSR40 PARTMARKING DETAIL – BR1 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -70 V Collector-Emitter Voltage
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BSR30
BSR40
-500mA,
-50mA
-150mA,
-15mA
-100mA,
FMMT551
BSR30
BSR40
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bcx5316
Abstract: BCX5616
Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5616 ISSUE 5 – MARCH 2001 C COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage
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BCX5616
BCX5316
500mA,
150mA,
100MHz
bcx5316
BCX5616
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TRANSISTOR S2d
Abstract: FMMTA92 SXTA42 SXTA92 DSA003720
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 JANUARY 1996 SXTA92 ✪ COMPLEMENTARY TYPE SXTA42 PARTMARKING DETAIL S2D C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage
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SXTA92
SXTA42
-200V,
-20mA,
-10mA,
-30mA,
20MHz
FMMTA92
TRANSISTOR S2d
SXTA42
SXTA92
DSA003720
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ZXTN2007Z
Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
Contextual Info: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2007Z
ZXTN2007ZTA
TAP26100
ZXTN2007Z
ZXTN2007ZTA
ZXTN
MARKING 7A SOT89
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ZXTP2014Z
Abstract: ZXTP2014ZTA
Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2014Z
-140V
ZXTP2014ZTA
ZXTP2014Z
ZXTP2014ZTA
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sot89
Abstract: BST15 BST40 FMMTA42 BSOT89 DSA003682
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – JANUARY 1996 BST40 ✪ COMPLEMENTARY TYPE – BST15 C PARTMAKING DETAIL — AT2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage
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BST40
BST15
FMMTA42
sot89
BST15
BST40
BSOT89
DSA003682
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transistor bt2
Abstract: BST16 BST39 FMMTA92 BSOT89
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST16 ✪ ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE – BST39 PARTMARKING DETAIL – BT2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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BST16
BST39
-280V
-250V
-50mA,
-30mA,
-10mA,
30MHz
FMMTA92
transistor bt2
BST16
BST39
BSOT89
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BSR31
Abstract: BSR33 BSR41 BSR43
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS BSR31 BSR33 ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPE – BSR31 – BSR41 BSR33 – BSR43 PARTMARKING DETAILS – BSR31 – BR2 BSR33 – BR4 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSR31
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BSR31
BSR33
BSR41
BSR43
BSR31
BSR33
BSR41
BSR43
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ZX5T849Z
Abstract: ZX5T849ZTA MARKING 7A SOT89
Contextual Info: ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T849Z
ZX5T849ZTA
ZX5T849Z
ZX5T849ZTA
MARKING 7A SOT89
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500ma 40v pnp
Abstract: BST62-70 FZTA63 DSA003682 BST62
Contextual Info: SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR ✪ ISSUE 3 – JANUARY 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — BST62-70 C 627 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -85 V Collector-Emitter Voltage
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BST62-70
-500mA,
-150mA,
-500mA
FZTA63
OT223)
500ma 40v pnp
BST62-70
FZTA63
DSA003682
BST62
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p96 sot89
Abstract: PNP TRANSISTOR SOT89 FCX596 FMMT596 ic-250mA DSA003686
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FCX596 ✪ D PARTMARKING DETAIL P96 S D G SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -220 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage
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FCX596
-200V
-100mA
-10mA
-250mA
-25mA*
-50mA,
100MHz
p96 sot89
PNP TRANSISTOR SOT89
FCX596
FMMT596
ic-250mA
DSA003686
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53Z Zetex
Abstract: 1a SOT89 IC35
Contextual Info: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2009Z
-60mV
ZXTP2009ZTA
522-ZXTP2009ZTA
ZXTP2009ZTA
53Z Zetex
1a SOT89
IC35
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transistor marking 6A
Abstract: ZXTN2010Z ZXTN2010ZTA
Contextual Info: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various
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ZXTN2010Z
transistor marking 6A
ZXTN2010Z
ZXTN2010ZTA
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"PNP Transistor"
Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
Contextual Info: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZX5T951Z
"PNP Transistor"
design ideas
TS16949
ZX5T951Z
ZX5T951ZTA
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SOT89 transistor marking 5A
Abstract: ZX5T951Z ZX5T951ZTA 5A SOT89
Contextual Info: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZX5T951Z
SOT89 transistor marking 5A
ZX5T951Z
ZX5T951ZTA
5A SOT89
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