SOT89 MA Search Results

SOT89 marking GA

Abstract: BAW78B SOT89 marking GD BAW78C BAW78D Diode Marking C.3 diode 78a BAW78A BAW78 VPS05162
Contextual Info: BAW78A.BAW78D Silicon Switching Diodes 1
Switching applications 2
High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW78A GA 1=A 2=C 3 = n.c. SOT89 BAW78B GB 1=A 2=C 3 = n.c. SOT89 BAW78C GC 1=A 2=C 3 = n.c. SOT89

sot89 stencil

Abstract: sot89 land pattern Loctite 218 RG200 substrate 5989-0810EN LOCTITE-96sc Getek LOCTITE 384 RG200 laser gun
Contextual Info: SOT89 Package Application Note 5051 Introduction PCB Land Pattern and Stencil Design Avago Technologies SOT89 is a 3 I/O pins Figure 1 package platform designed to offer excellent heat dissipation and wide RF frequency response. The SOT89 package itself is lead free with a dimension of 4.1 mm

MARKING N93

Abstract: 4446 FCX493 FCX593 fcx493ta
Contextual Info: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.

Contextual Info: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW78D  BAW79D !  ! Type Package Configuration Marking BAW78D BAW79D SOT89 SOT89 single

Aeroflex Microelectronic Solutions

Abstract: rf sot89 50 MMA500
Contextual Info: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.

mma500

Abstract: 05OUR
Contextual Info: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.

Diode markings 79a

Abstract: BAW79D BAW78 BAW78D
Contextual Info: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW78D  BAW79D !  ! Type Package Configuration Marking BAW78D BAW79D SOT89 SOT89 single

TRANSISTOR S2d

Abstract: lc-30mA L02M
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 SXTA92 O COM PLEM ENTARY TYPE - SXTA42 PARTMARKING DETAIL - S2D SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL Emitter-Base Voltage VALUE

SOT89 MARKING CODE 43

Contextual Info: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage BAW78D  BAW79D !  Type BAW78D BAW79D ! Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.

FR4 pcb

Abstract: copper wire 2.5mm
Contextual Info: Thermal Data SOT223 3W Derating SOT223 3W Devices SOT223 j-c=12°C/W Typical j-a=41.7°C/W Maximum Mounted on a FR4 p.c.b. of 50mm x 50mm 2"x2" connected using 25mm x 0.5mm copper wire SOT89 1Watt Devices SOT89 (1W) Derating SOT89 j-a=125°C/W Maximum Mounted on a 15 x 15 x 0.6 mm alumina ceramic substrate

Contextual Info: BCV28 IS OBSOLETE PLEASE USE FCX705 SOT89 PNP SILICON DARLINGTON TRANSISTOR BCV28 ✪ ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV29 PARTMARKING DETAIL – ED C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

TK10485M

Abstract: TK16203U TK14521 TK16202U MFP-12 tk14521m TK10489M TK10485 TK10492 MFP36
Contextual Info: 27 INTEGRATED CIRCUITS TOKO U. Kl M ï f i ICs for Communications Equipment üimfflic Surface Mounting Taping 9 .5 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • 6 .0 -1 0 .5 SOT89-5 • • • FM IF system IC for use In cordless phones, amateur radios up to

BCV28

Abstract: BCV29 FMMT38A
Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BCV29 ISSUE 4 – JANUARY 1996 COMPLEMENTARY TYPE – BCV28 PARTMARKING DETAIL – EF C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage

Contextual Info: PART OBSOLETE - USE FZTA42 SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – JANUARY 1996 BST40 ✪ COMPLEMENTARY TYPE – BST15 C PARTMAKING DETAIL — AT2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound

BCX5216QTA

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE SAT < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 

BCX5316

Abstract: BCX5616
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5316 ISSUE 4 – MARCH 2001 C COMPLIMENTARY TYPE – BCX5616 PARTMARKING DETAIL – AL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO -100 V Collector-Emitter Voltage

BCV48

Abstract: BCV49 FMMT38A CM800
Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BCV49 ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV48 PARTMARKING DETAILS – EG C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage

Contextual Info: Not Recommended for New Design Please Use BST52 SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BST51 ISSUE 3 – JANUARY 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — C AS2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current

sot89

Abstract: NPN SOT89 FMMTA42 SXTA42 SXTA92 DSA003720
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – JANUARY 1996 SXTA42 ✪ COMPLEMENTARY TYPE – SXTA92 PARTMARKING DETAIL – SID C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage

sot89

Abstract: BST16 FMMT458 NPN SOT89 BST39 DSA003681
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST39 ✪ ISSUE 4 – JUNE 1996 FEATURES * Fast Switching * High hFE. C COMPLEMENTARY TYPE – BST16 PARTMAKING DETAIL – AT1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

PNP TRANSISTOR SOT89

Abstract: BST15 BST40 FMMTA92 DSA003681 fmmt-a
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST15 ✪ ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE – BST40 PARTMARKING DETAIL – BT1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage