SOT89 FET MARKING Search Results

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

transistor MARKING CODE LAYOUT G SOT89

Abstract: "package marking" 564 ATF-52189-BLK marking 903 sot-89 SOT89 marking GA LNA in WLAN 702 sot c 2665 depletion mode fet e-phemt
Contextual Info: ATF-52189 High Linearity Mode [1] Enhancement Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

ATF-53189

Abstract: AN 7591 POWER AMPLIFIER HEMT marking P
Contextual Info: ATF-53189 ­ Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 ­Package Data Sheet Description Features Avago Technologies’s ATF‑53189 is a single-voltage high linearity, low noise E‑pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a

C3-1.2AGHZ

Abstract: ATF-53189
Contextual Info: ATF-53189 ­ Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 ­Package Data Sheet Description Features Avago Technologies’s ATF‑53189 is a single-voltage high linearity, low noise E‑pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a

ATF-52189

Contextual Info: ATF-52189 High Linearity Mode[1] Enhancement Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a

A004R

Abstract: ATF-50189 ATF-50189-BLK ATF-50189-TR1 MO229 4704 fet
Contextual Info: ATF-50189 Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low noise figure and high output IP3 at

7411 3 INPUT AND gate

Abstract: 441 sot-89 marking code matching circuit of atf 52189 8179 std 432- 050 ATF-52189-BLK ATF-53189 53189 544 code marking amplifier FET SOT-89
Contextual Info: ATF-53189 Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies’s ATF-53189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a high-linearity, low noise, medium-power

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

ic str wg 252

Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

Contextual Info: FH101 The Communications Edge TM High Dynamic Range FET Product Features Product Information Product Description Functional Diagram • • • • • • • The FH101 is a high dynamic range FET packaged in a low-cost surface-mount package. The combination of low

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

NE5500434

Abstract: nec RF package SOT89 nec 2501
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate lateral MOS

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

NE5500234

Abstract: nec RF package SOT89 nec 2501 marking v2 FRS transceiver NE5500234-T1-AZ
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500234 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS DESCRIPTION The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

SOT89 FET marking

Abstract: SOT 213 MARKING diode sot-89 marking code FET SOT-89 N-Channel sot-89 fet
Contextual Info: TN2535 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: Supertex inc. TP2424 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Free from secondary breakdown ►► Low input and output leakage

2SK2973

Abstract: hd 9729 75458 151821 45980 marking 668 transistor t 2190 transistor marking 551 sot-89 marking c7 sot-89 12089
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm 4.6MAX VHF/UHF power amplifiers applications. 1.5±0.1 1.6±0.2 FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm

marking N8 sot-23

Abstract: mos fet marking k1
Contextual Info: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

diode varicap BB 112

Abstract: SMD TRANSISTOR MARKING 02N toshiba smd marking code transistor SOT23-6 MARKING 02n smd code marking NEC rf transistor transistor smd marking CODE Wb smd transistor m29 sot343 UXA23465 RF LNB C band chipset smd transistor M26 sot23
Contextual Info: RFマニュアル第10版 RF製品用のアプリケーションおよび設計マニュアル 2007年9月 はじめに 『RFマニュアル』のスペシャル・エディションへようこそ。 『RFマニュアル』も今回で10版 となりました。

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This