SOT89 DAR Search Results

Contextual Info: BCV28 IS OBSOLETE PLEASE USE FCX705 SOT89 PNP SILICON DARLINGTON TRANSISTOR BCV28 ✪ ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV29 PARTMARKING DETAIL – ED C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

BCV28

Abstract: BCV29 FMMT38A
Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BCV29 ISSUE 4 – JANUARY 1996 COMPLEMENTARY TYPE – BCV28 PARTMARKING DETAIL – EF C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage

BCV48

Abstract: BCV49 FMMT38A CM800
Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BCV49 ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV48 PARTMARKING DETAILS – EG C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage

Contextual Info: Not Recommended for New Design Please Use BST52 SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BST51 ISSUE 3 – JANUARY 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — C AS2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT

TRANSISTOR AS3

Abstract: BST52 FMMT614
Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BST52 ISSUE 3 – JANUARY 1996 FEATURES * Fast Switching * High hFE C E PARTMAKING DETAIL — AS3 C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 90 V Collector-Emitter Voltage

Contextual Info: BCV48 IS OBSOLETE PLEASE USE FCX705 SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR BCV48 ✪ ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV49 PARTMARKING DETAIL – EE C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: BCV29 IS OBSOLETE PLEASE USE BCV49 SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BCV29 ISSUE 4 – JANUARY 1996 COMPLEMENTARY TYPE – BCV28 PARTMARKING DETAIL – EF C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: PART OBSOLETE - USE BST52 SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BST51 ISSUE 3 – JANUARY 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — C AS2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

BCV28

Abstract: BCV29
Contextual Info: SOT89 PNP SILICON DARLINGTON TRANSISTOR BCV28 ✪ ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV29 PARTMARKING DETAIL – ED C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage

BST51

Abstract: FMMT38A
Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BST51 ISSUE 3 – JANUARY 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — C AS2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage

500-MA

Contextual Info: PART OBSOLETE SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR ✪ ISSUE 4 – MARCH 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — BST61 C BS2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -80

BCV49

Abstract: BCV48 B01M
Contextual Info: SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR BCV48 ✪ ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV49 PARTMARKING DETAIL – EE C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage

500ma 40v pnp

Abstract: BST62-70 FZTA63 DSA003682 BST62
Contextual Info: SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR ✪ ISSUE 3 – JANUARY 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — BST62-70 C 627 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -85 V Collector-Emitter Voltage

BST61

Abstract: FZTA63 PNP SOT89
Contextual Info: SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR ✪ ISSUE 4 – MARCH 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — BST61 C BS2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -80 V Collector-Emitter Voltage

Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BCV49 ISSUE 3 – SEPTEMBER 1995 COMPLEMENTARY TYPE – BCV48 PARTMARKING DETAILS – EG C E C B SOT89 ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Collect or -Base Vo lt age VCBO 80 V Collector -Em itter Voltage

PNP TRANSISTOR SOT89

Abstract: sc 107 transistor SC-62 C1 SOT89 PBSS4250X PBSS5540Z PXTA14 audio power amplifiers with transistors PBSS9110Z PBSS5320X
Contextual Info: Semiconductors Date of release: September 2004 Philips’ medium power transistor portfolio in SOT89 SC-62 and SOT223 (SC-73) General features Portfolio overview • Available in the biggest small-signal packages SOT89 (SC-62) and SOT223 (SC-73) • Bridging the gap between DPAK power transistors

Contextual Info: A Product Line of Diodes Incorporated FCX493A 60V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V • • IC = 1A high Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic. “Green” Molding Compound.

e005g

Contextual Info: ECG005 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +18 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19.5 dB Gain at 1 GHz • 3.3 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles

Contextual Info: ECG050 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +19 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19 dB Gain at 1 GHz • 5.5 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles

SOT89 MARKING CODE 944

Contextual Info: ECG050 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +19 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19 dB Gain at 1 GHz • 5.5 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles

Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR BST52 ISSUE 3 - JANUARY 1996_ FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — AS3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE UNIT Vcbo

Contextual Info: SOT89 IMPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FCX604 FEATURES: * 1A CONTINUOUS COLLECTOR CURRENT * 1.5W POWER DISSIPATION * GUARANTEED HFE SPECIFIED UP TO 2A * FAST SW ITCHING PARTMARKING DETAIL - 6 0 4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL

Contextual Info: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 4 - JANUARY 1996 COMPLEMENTARY TYPE - PARTMARKING DETAIL - BCV28 EF ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VCBO 40 V ^CEO 30 V Em itter-Base Voltage V E BO 10 V Peak Pulse Current ' cm 800

Contextual Info: • 0Q2HS31} TST H A P X N AUER PHILIPS/DISCRETE BCV28 BCV48 b7E » y v SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal darlington transistors, housed in a microminiature envelope SOT89 . NPN complementary types are BCV29/49. QUICK REFERENCE DATA BCV28