SOT89 CJ Search Results

BCX68

Abstract: BCX69 BCX69-16 BCX69-25 FMMT549 DSA003675
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCX69 ISSUE 2 – FEBRUARY 1995 ✪ FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE – BCX68 PARTMARKING DETAIL – BCX69 – CJ BCX69-16 – CG BCX69-25 – CH E C B SOT89 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCX69 ISSUE 2 – FEBRUARY 1995 ✪ FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE – BCX68 PARTMARKING DETAIL – BCX69 – CJ BCX69-16 – CG BCX69-25 – CH E C B SOT89 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT89 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR BCX69 ISSUE 2 – FEBRUARY 1995 ✪ FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE – BCX68 PARTMARKING DETAIL – BCX69 – CJ BCX69-16 – CG BCX69-25 – CH E C B SOT89 ABSOLUTE M AXIM UM RATINGS.

Contextual Info: BCX69-16 Not Recommended for New Design, Please Use BCX69-25 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCX69 ISSUE 2 – FEBRUARY 1995 ✪ FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE – BCX68 PARTMARKING DETAIL – BCX69 – CJ

25 SOT89

Contextual Info: BCX69-16 OBSOLETE - USE BCX69-25 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCX69 ISSUE 2 – FEBRUARY 1995 ✪ FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE – BCX68 PARTMARKING DETAIL – BCX69 – CJ BCX69-16 – CG BCX69-25 – CH

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 -JANUARY 1996 O_ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC868 NPN PARTMARKING DETAILS -

Contextual Info: SOT89 PNP SILICON PLANAR M ED IU M POWER TRANSISTOR ISSU E 2 - FEBRUARY 1995_ O FEATURES * High gain and low saturation voltages COMPLEMENTARY T Y P E - BCX68 PARTMARKING DETAIL - BCX69 - CJ BCX69-16 - CG BCX69-25 -C H ABSOLUTE M A X IM U M RATINGS.

BC869

Abstract: cec "sot89" BC868 BC869-16 BC869-25 FMMT549
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - C BC868 NPN PARTMARKING DETAILS -

cec "sot89"

Contextual Info: PART OBSOLETE - USE BCX6925 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE -

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - JANUARY 1996 _ O FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH h FE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE BC868 NPN PARTMARKING DETAILS -

cec "sot89"

Abstract: BC869 SOT89 chc CHC SOT89
Contextual Info: Not Recommended for New Design Please Use BCX6925 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE

Contextual Info: bbS3T31 QQE5T70 TET H A P X N AMER PHILIPS/DISCRETE PXT2907/A b?E D SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A.

le2m

Abstract: BFN17
Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -OCTOBER 1995 O COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN17 DD BFN16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VCBO 250 V -V « o 250 V ^EBO 5 V Collector-Base Voltage C ollector-E m itter Voltage

Contextual Info: • bbSB'iai DDESTb? 435 » A P X N AMER PHILIPS/DISCRETE P XT2222/A b?E D ;v SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for switching and linear applications. The complementary type is PXT2907/A.

ds132

Abstract: DS-132
Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BST86 FEA TU RES: PARTM ARKIN G DETAIL - KO ABSOLUTE MAXIMUM RATINGS V A LU E UNIT 180 300 800 ±20 1 - 55 to + 1 50 V mA mA V W °C SYM B O L PARAM ETER Drain-Source Voltage Continuous Drain Current at Ta = 2 5 °C

Contextual Info: • bbS3^31 0023=155 33^ HIAPX N AUER PHILIPS/DISCRETE BST80 b?E D y v N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in thin and thick-film circuits fo r application with relay, high-speed

BH P58

Abstract: sot89 mark code AE ah p96 n58 sot89 sot89 mark code AA
Contextual Info: SOT89 IMPIM MEDIUM POWER TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-E m itter Type v CEIsat Max ti -E v CBO V VCEO V lc cont) mA mW FCX458 400 400 300 1500 BST 39 400 350 500 1500 P.Ot M in/M ax h Typ MHz Part Mark Code at Iq / V ce mA / Volts Volts at l c / Ib

Contextual Info: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed

lem lta 100p

Abstract: lta 100p 6100B
Contextual Info: SOT89 PNP SILICON PLANAR M ED IU M POWER TRANSISTOR iSSUE 2 - FEBRUARY 1995 O FEATURES * H igh g a in a n d lo w saturation v o lta ge s C O M P LEM EN T A R Y TYPE - BCX68 P A R T M A R K IN G D E T A IL - BCX69 - CJ BCX69T6 CG B C X 6 9 -2 5 -C H ABSOLUTE M A X IM U M RATINGS.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 1A LOW DROPOUT LINEAR REGULATOR GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 1A LOW DROPOUT LINEAR REGULATOR GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 1A LOW DROPOUT LINEAR REGULATOR GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap

1117 regulator

Abstract: CJA1117-3.3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 1A LOW DROPOUT LINEAR REGULATOR GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap

1117z

Abstract: CJ1117-ADJ 1117* 50 33 CJU1117-ADJ CJ1117 CJD1117-5 output 5.0 voltage regulator sot 223 CJU1117-5.0 1 A 1.8 V Low Dropout Linear Regulator 14VVIN
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 1A LOW DROPOUT LINEAR REGULATOR GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap