SOT89 3A Search Results

FCX619

Contextual Info: A Product Line of Diodes Incorporated FCX619 50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V  Case: SOT89  IC = 3A high Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound

MARKING KN2

Contextual Info: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 3A high Continuous Current  Case material: Molded Plastic. “Green” Molding Compound.  Low saturation voltage VCE(sat) < 300mV @ 1A 

ZXTP2014Z

Abstract: ZXTP2014ZTA
Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

Bv 42 transistor

Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

ZX5T955Z

Abstract: ZX5T955ZTA Bv 42 transistor
Contextual Info: ZX5T955Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC

Contextual Info: A Product Line of Diodes Incorporated FCX1053A 75V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 75V   IC = 3A high Continuous Current   ICM = 10A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound

FCX1053A

Abstract: FCX1053ATA 78m marking
Contextual Info: FCX1053A SOT89 NPN medium power transistor Summary BVCEO = 75V RCE sat = 78m⍀ IC = 3A Description This medium power NPN transistor, offered in the SOT89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications.

SOT89 52 10A

Abstract: design ideas FCX1051A FCX1051ATA FCX1151A TS16949
Contextual Info: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89

Contextual Info: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89

TS16949

Abstract: ZX5T955Z
Contextual Info: ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC

2DC4672-13

Contextual Info: A Product Line of Diodes Incorporated 2DC4672 50V NPN SURFACE MOUNT TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V  Case: SOT89  IC = 3A High Continuous Current  Case Material: Molded Plastic, “Green” Molding Compound  Low saturation voltage VCE sat < 350mV @ 1A

Contextual Info: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound

BCX5216QTA

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE SAT < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V  Case: SOT89  IC = -5.5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.

ZXTN19060CZ

Abstract: TS16949 ZXTP19060CZ ZXTP19060CZTA
Contextual Info: ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC cont = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor

SOT89 transistor marking 851

Contextual Info: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.

ZXTP2013Z

Abstract: ZXTP2013ZTA
Contextual Info: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

Contextual Info: ZXTN25020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 6A VCE(sat) < 48mV @ 1A RCE(sat) = 30m⍀ PD = 2.4W Complementary part number ZXTP25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V NPN

SOT89 transistor marking 4A high frequency

Abstract: ZX5T953ZTA ZX5T953Z
Contextual Info: ZX5T953Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC

Contextual Info: A Product Line of Diodes Incorporated BST39 350V NPN HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 350V • • IC = 0.5A High Continuous Current • • ICM = 1A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound

Contextual Info: A Product Line of Diodes Incorporated FCX491 60V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V   IC = 1A Continuous Collector Current   ICM = 2A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic. “Green” Molding Compound.

Contextual Info: A Product Line of Diodes Incorporated FCX493A 60V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V • • IC = 1A high Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic. “Green” Molding Compound.

Contextual Info: ZXTP2013Z 100V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line