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    SOT363 6 Search Results

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    SOT363 6 Price and Stock

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    PanJit Semiconductor PJT138K-R1-00001

    MOSFETs SOT363 N-CH 50V .36A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PJT138K-R1-00001 Reel 390,000 3,000
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    Vishay Intertechnologies SI1922EDH-T1-GE3

    MOSFETs 20V Vds 8V Vgs SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SI1922EDH-T1-GE3 Reel 81,000 3,000
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    Vishay Intertechnologies SI1553CDL-T1-GE3

    MOSFETs -20V Vds 12V Vgs SC70-6 N&P PAIR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SI1553CDL-T1-GE3 Reel 72,000 3,000
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    Vishay Intertechnologies SQ1421EDH-T1-GE3

    MOSFETs SOT363 P-CH 60V 1.6A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SQ1421EDH-T1-GE3 Reel 57,000 3,000
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    ROHM Semiconductor UM6K31NFHATCN

    MOSFETs Nch+Nch 60V Vds 3Rds(on) SOT-363
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI UM6K31NFHATCN Reel 27,000 3,000
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    SOT363 6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SOT363

    Contextual Info: SOT363 Vishay Semiconductors SOT363 Package Dimensions in mm Inches 14280 Document Number 84015 Rev. 1.2, 08-Dec-06 www.vishay.com 1 SOT363 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to


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    OT363 08-Dec-06 D-74025 SOT363 PDF

    BD5 diode

    Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES


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    L02ESD5V0D6-5 L02ESD5V0D6-5 OT363 OT363 100mV BD5 diode PDF

    Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT363 The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES


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    L02ESD5V0D6-5 L02ESD5V0D6-5 OT363 OT363 100mV PDF

    PBSS9110Y

    Contextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 9 June 2004 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat


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    PBSS9110Y OT363 SC-88) OT363 PBSS9110Y PDF

    PBSS8110Y

    Abstract: PPBSS8110Y
    Contextual Info: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 2 June 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat


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    PBSS8110Y OT363 SC-88) OT363 PBSS8110Y PPBSS8110Y PDF

    sot363

    Abstract: SOT-363 12NC NXP 12NC ending nxp Tape and Reel Information NXP SOT363 Barcode label SOT363_125
    Contextual Info: SOT363 Reversed product orientation 12NC ending 125 Rev. 03 — 24 April 2009 Packing information 1. Packing method Fig. 1 Package version 12NC ending Reel dimensions d x w mm SPQ/PQ (pcs) Reels per box Outer box dimensions l x w x h (mm) SOT363 125 180 x 8.4


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    OT363 OT363-1 sot363 SOT-363 12NC NXP 12NC ending nxp Tape and Reel Information NXP SOT363 Barcode label SOT363_125 PDF

    Contextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat


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    PBSS9110Y OT363 SC-88) OT363 PBSS9110Y PDF

    Contextual Info: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat


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    PBSS8110Y OT363 SC-88) OT363 PBSS8110Y PDF

    BGA2867

    Abstract: marking 2h sot363
    Contextual Info: BGA2867 MMIC wideband amplifier Rev. 2 — 25 September 2012 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.


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    BGA2867 OT363 BGA2867 marking 2h sot363 PDF

    CSH210

    Contextual Info: CSH210 ? TX-RX and diversity switch for mobile communications ? GaAs PHEMT Technology ? Low Insertion Loss ? No Supply Voltage Needed ? Positive Control Voltage ? SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!


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    CSH210 OT363 Q62705K OT363 30dbm CSH210 PDF

    Contextual Info: BGA2818 MMIC wideband amplifier Rev. 2 — 1 May 2012 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.


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    BGA2818 OT363 PDF

    BGA2816

    Abstract: mmic code marking 313
    Contextual Info: BGA2816 MMIC wideband amplifier Rev. 2 — 29 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.


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    BGA2816 OT363 BGA2816 mmic code marking 313 PDF

    Contextual Info: BGA2801 MMIC wideband amplifier Rev. 2 — 29 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.


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    BGA2801 OT363 PDF

    bga2800

    Abstract: marking 52 sot363 smd transistor marking E7 SMD MARKING CODE f2H
    Contextual Info: BGA2800 MMIC wideband amplifier Rev. 2 — 18 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.


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    BGA2800 OT363 bga2800 marking 52 sot363 smd transistor marking E7 SMD MARKING CODE f2H PDF

    Contextual Info: Preliminary ES/EMM5328ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • • • Small size and low-cost SC-70 / SOT363 package High Input P0.1dB: 29 dBm Low Insertion Loss: 0.6 dB at 6 GHz


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    ES/EMM5328ZW SC-70 OT363 ES/EMM5328ZW PDF

    pnp transistor 313 smd

    Abstract: MARKING 5F SOT363 SMD Transistor 5f TRANSISTOR SMD MARKING CODES BC856S TRANSISTOR SMD CODE PACKAGE SOT363 transistor SMD MARKING CODE MARKING CODE SMD IC 5F smd transistor
    Contextual Info: BC856S 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 02 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package.


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    BC856S OT363 SC-88) BC856S pnp transistor 313 smd MARKING 5F SOT363 SMD Transistor 5f TRANSISTOR SMD MARKING CODES TRANSISTOR SMD CODE PACKAGE SOT363 transistor SMD MARKING CODE MARKING CODE SMD IC 5F smd transistor PDF

    CH3906SGP

    Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH3906SGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT363


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    CH3906SGP SC-88/SOT-363 SC-88/SOT363) 200mA) 100uA, CH3906SGP PDF

    Contextual Info: MMDT2907A 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Ultra-Small Surface Mount Package   Epitaxial Planar Die Construction   Ideal for Low Power Amplification and Switching  Totally Lead-Free & Fully RoHS compliant Notes 1 & 2


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    MMDT2907A OT363 J-STD-020 AEC-Q101 MIL-STD202, DS30109 PDF

    Contextual Info: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been


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    UM5304EEXF UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 UM5304EEXF PDF

    Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 3 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Observe precautions for handling


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    PMBFJ620 OT363 JESD625-A PDF

    Transistor SMD marking code NV

    Abstract: TRANSISTOR SMD MARKING CODES MARKING CODE SMD IC data sheet for all smd components double match transistor K TRANSISTOR SMD MARKING CODE SOT363 6 BC847BS TRANSISTOR SMD npn MARKING CODE TRANSISTOR SMD MARKING CODE UA BCM847BS
    Contextual Info: BCM847BS NPN matched double transistor; ∆hFE = 10 % Rev. 02 — 6 April 2005 Product data sheet 1. Product profile 1.1 General description NPN matched double transistor in a SOT363 SC-88 SMD plastic package. Matched version of BC847BS. The transistors are fully isolated internally.


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    BCM847BS OT363 SC-88) BC847BS. BCM857BS. Transistor SMD marking code NV TRANSISTOR SMD MARKING CODES MARKING CODE SMD IC data sheet for all smd components double match transistor K TRANSISTOR SMD MARKING CODE SOT363 6 BC847BS TRANSISTOR SMD npn MARKING CODE TRANSISTOR SMD MARKING CODE UA BCM847BS PDF

    EMM5329ZW

    Abstract: V23133 marking code V3.V
    Contextual Info: EMM5329ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • High Input P0.1dB: 33dBm Low Insertion Loss: 0.55 dB at 6 GHz GaAs PHEMT technology Small size and low-cost SC-70 / SOT363 package APPLICATIONS


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    EMM5329ZW 33dBm SC-70 OT363 EMM5329ZW V23133 marking code V3.V PDF

    10939

    Abstract: PMGD8000LN
    Contextual Info: PMGD8000LN Dual µTrenchMOS logic level FET Rev. 01 — 27 February 2003 MBD128 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 SC-88 .


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    PMGD8000LN MBD128 PMGD8000LN OT363 SC-88) 10939 PDF

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: 2N7002PS m8 smd transistor g1 TRANSISTOR SMD MARKING CODE smd transistor marking A1 transistor smd marking A1 NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING A1
    Contextual Info: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


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    2N7002PS OT363 SC-88) AEC-Q101 MOSFET TRANSISTOR SMD MARKING CODE A1 2N7002PS m8 smd transistor g1 TRANSISTOR SMD MARKING CODE smd transistor marking A1 transistor smd marking A1 NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING A1 PDF