SOT363 6 Search Results
SOT363 6 Price and Stock
Nexperia 74LVC2G14GW,125Inverters SOT363-1 INVERTERS |
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74LVC2G14GW,125 | Reel | 480,000 | 3,000 |
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Nexperia BAV99S,115Small Signal Switching Diodes DIODE-SS 100V 200MA SOT-363-6 |
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BAV99S,115 | Reel | 435,000 | 3,000 |
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PanJit Semiconductor PJT138K-R1-00001MOSFETs SOT363 N-CH 50V .36A |
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PJT138K-R1-00001 | Reel | 423,000 | 3,000 |
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ROHM Semiconductor UMX1NTNBipolar Transistors - BJT DUAL NPN 50V 150MA SOT-363 |
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UMX1NTN | Reel | 117,000 | 3,000 |
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Nexperia PMBT3946YPN,115Bipolar Transistors - BJT SOT363 40V .2A NPN/PNP BJT |
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PMBT3946YPN,115 | Reel | 93,000 | 3,000 |
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SOT363 6 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SOT363Contextual Info: SOT363 Vishay Semiconductors SOT363 Package Dimensions in mm Inches 14280 Document Number 84015 Rev. 1.2, 08-Dec-06 www.vishay.com 1 SOT363 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to |
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OT363 08-Dec-06 D-74025 SOT363 | |
BC847BContextual Info: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in One Package Ideal for Medium Power Amplification and Switching Case: SOT363 |
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BC847PN OT363 J-STD-020 MIL-STD-202, DS30278 BC847B | |
BC847PNContextual Info: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in One Package Ideal for Medium Power Amplification and Switching Case: SOT363 |
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BC847PN OT363 J-STD-020 MIL-STD-202, DS30278 BC847PN | |
L02ESD5V0D6-5
Abstract: 15KV diode sot363
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L02ESD5V0D6-5 OT363 L02ESD5V0D6-5 OT363 15KV diode sot363 | |
Contextual Info: MMDT4413 COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in One Package NPN = 4401 Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound. |
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MMDT4413 OT363 MIL-STD-202, DS30121 | |
Contextual Info: DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > 100V Case: SOT363 IC = 1A high Continuous Collector Current ICM = 3A Peak Pulse Current Case Material: Molded Plastic, “Green” Molding Compound. |
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DSS8110Y OT363 J-STD-020 200mV DSS9110Y) MIL-STD-202, DS31679 | |
15KV
Abstract: diode sot363
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L02ESD5V0D6-5 OT363 L02ESD5V0D6-5 OT363 100mV 15KV diode sot363 | |
BD5 diodeContextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES |
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L02ESD5V0D6-5 L02ESD5V0D6-5 OT363 OT363 100mV BD5 diode | |
Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT363 The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES |
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L02ESD5V0D6-5 L02ESD5V0D6-5 OT363 OT363 100mV | |
Contextual Info: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • • • Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 |
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MMDT3904 OT363 J-STD-020 MIL-STD202, AEC-Q101 DS30088 | |
nxp marking code SOT363
Abstract: BAT54XY
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BAT54XY OT363 OT363 BAT54XY nxp marking code SOT363 | |
PBSS9110YContextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat |
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PBSS9110Y OT363 SC-88) OT363 PBSS9110Y | |
PBSS9110YContextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 9 June 2004 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat |
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PBSS9110Y OT363 SC-88) OT363 PBSS9110Y | |
PBSS8110Y
Abstract: PPBSS8110Y
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PBSS8110Y OT363 SC-88) OT363 PBSS8110Y PPBSS8110Y | |
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Contextual Info: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very |
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BAT54XY OT363 OT363 BAT54XY | |
C 102 transistor equivalent table
Abstract: PBSS8110Y PPBSS8110Y
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PBSS8110Y OT363 SC-88) OT363 PBSS8110Y C 102 transistor equivalent table PPBSS8110Y | |
sot363
Abstract: SOT-363 12NC NXP 12NC ending nxp Tape and Reel Information NXP SOT363 Barcode label SOT363_125
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OT363 OT363-1 sot363 SOT-363 12NC NXP 12NC ending nxp Tape and Reel Information NXP SOT363 Barcode label SOT363_125 | |
Contextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat |
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PBSS9110Y OT363 SC-88) OT363 PBSS9110Y | |
Contextual Info: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat |
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PBSS8110Y OT363 SC-88) OT363 PBSS8110Y | |
sot363 voltage controller
Abstract: AEC-Q100 optocoupler mark K1 sot363 tlv431
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TLV431 TLV431 SC70-6 OT363] DS32088 sot363 voltage controller AEC-Q100 optocoupler mark K1 sot363 | |
bga2714
Abstract: MMIC marking code SC ba 458 smd 001119 204 02
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BGA2714 OT363 BGA2714 MMIC marking code SC ba 458 smd 001119 204 02 | |
BGA2815
Abstract: A1 marking code amplifier MMIC marking code 132 marking 64 amplifier marking code BV
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BGA2815 OT363 BGA2815 A1 marking code amplifier MMIC marking code 132 marking 64 amplifier marking code BV | |
BGA2866
Abstract: MMIC marking 81 smd marking f2
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BGA2866 OT363 BGA2866 MMIC marking 81 smd marking f2 | |
mmic marking 865
Abstract: BGA2850 marking 865 mmic marking 52 sot363 865 marking amplifier
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BGA2850 OT363 mmic marking 865 BGA2850 marking 865 mmic marking 52 sot363 865 marking amplifier |