SOT363 6 Search Results

SOT363

Contextual Info: SOT363 Vishay Semiconductors SOT363 Package Dimensions in mm Inches 14280 Document Number 84015 Rev. 1.2, 08-Dec-06 www.vishay.com 1 SOT363 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to

BD5 diode

Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES

Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT363 The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES

PBSS9110Y

Contextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 9 June 2004 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat

PBSS8110Y

Abstract: PPBSS8110Y
Contextual Info: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 2 June 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features • ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat

sot363

Abstract: SOT-363 12NC NXP 12NC ending nxp Tape and Reel Information NXP SOT363 Barcode label SOT363_125
Contextual Info: SOT363 Reversed product orientation 12NC ending 125 Rev. 03 — 24 April 2009 Packing information 1. Packing method Fig. 1 Package version 12NC ending Reel dimensions d x w mm SPQ/PQ (pcs) Reels per box Outer box dimensions l x w x h (mm) SOT363 125 180 x 8.4

Contextual Info: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat

Contextual Info: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat

BGA2867

Abstract: marking 2h sot363
Contextual Info: BGA2867 MMIC wideband amplifier Rev. 2 — 25 September 2012 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

CSH210

Contextual Info: CSH210 ? TX-RX and diversity switch for mobile communications ? GaAs PHEMT Technology ? Low Insertion Loss ? No Supply Voltage Needed ? Positive Control Voltage ? SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!

Contextual Info: BGA2818 MMIC wideband amplifier Rev. 2 — 1 May 2012 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

BGA2816

Abstract: mmic code marking 313
Contextual Info: BGA2816 MMIC wideband amplifier Rev. 2 — 29 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

Contextual Info: BGA2801 MMIC wideband amplifier Rev. 2 — 29 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

bga2800

Abstract: marking 52 sot363 smd transistor marking E7 SMD MARKING CODE f2H
Contextual Info: BGA2800 MMIC wideband amplifier Rev. 2 — 18 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

Contextual Info: Preliminary ES/EMM5328ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • • • Small size and low-cost SC-70 / SOT363 package High Input P0.1dB: 29 dBm Low Insertion Loss: 0.6 dB at 6 GHz

pnp transistor 313 smd

Abstract: MARKING 5F SOT363 SMD Transistor 5f TRANSISTOR SMD MARKING CODES BC856S TRANSISTOR SMD CODE PACKAGE SOT363 transistor SMD MARKING CODE MARKING CODE SMD IC 5F smd transistor
Contextual Info: BC856S 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 02 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package.

CH3906SGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH3906SGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT363

Contextual Info: MMDT2907A 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Ultra-Small Surface Mount Package   Epitaxial Planar Die Construction   Ideal for Low Power Amplification and Switching  Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

Contextual Info: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been

Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 3 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Observe precautions for handling

Transistor SMD marking code NV

Abstract: TRANSISTOR SMD MARKING CODES MARKING CODE SMD IC data sheet for all smd components double match transistor K TRANSISTOR SMD MARKING CODE SOT363 6 BC847BS TRANSISTOR SMD npn MARKING CODE TRANSISTOR SMD MARKING CODE UA BCM847BS
Contextual Info: BCM847BS NPN matched double transistor; ∆hFE = 10 % Rev. 02 — 6 April 2005 Product data sheet 1. Product profile 1.1 General description NPN matched double transistor in a SOT363 SC-88 SMD plastic package. Matched version of BC847BS. The transistors are fully isolated internally.

EMM5329ZW

Abstract: V23133 marking code V3.V
Contextual Info: EMM5329ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • High Input P0.1dB: 33dBm Low Insertion Loss: 0.55 dB at 6 GHz GaAs PHEMT technology Small size and low-cost SC-70 / SOT363 package APPLICATIONS

10939

Abstract: PMGD8000LN
Contextual Info: PMGD8000LN Dual µTrenchMOS logic level FET Rev. 01 — 27 February 2003 MBD128 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 SC-88 .

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: 2N7002PS m8 smd transistor g1 TRANSISTOR SMD MARKING CODE smd transistor marking A1 transistor smd marking A1 NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING A1
Contextual Info: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET