SOT323 MOSFET P Search Results

A1 SOT323 MOSFET P-CHANNEL

Abstract: marking G SOT323 Transistor SOT323 MOSFET P 12V P-Channel Power MOSFET AF1333P
Contextual Info: AF1333P P-Channel Enhancement Mode Power MOSFET „ Features „ Description - Simple Gate Drive - Fast Switching Speed - Small Package Outline SOT323 The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

NX3020NAK

Contextual Info: NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: NX7002AKW 60 V, single N-channel Trench MOSFET 11 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2N7002PW

Contextual Info: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

MARKING SMD x9

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2N7002PW

Abstract: smd code marking WV transistor sc-70 marking codes SOT323 MOSFET P
Contextual Info: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

2N7002BKW

Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: UM2302 60V D-S Small Signal MOSFET UM2302S SOT23-3 UM2302P SOT323 General Description The UM2302 is a low threshold N-channel MOSFET, which has low on-resistance, high reliability and stability, as well as fast switch capability and high saturation current. This benefit

bss138bkw

Contextual Info: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

BSS84AKW

Abstract: BSS84AKW/DG/B2215 A1 SOT323 MOSFET P-CHANNEL
Contextual Info: SO T3 23 BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

AO7400

Contextual Info: AO7400 30V N-Channel MOSFET General Description Product Summary The AO7400 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide

2N7002PW

Abstract: x8 sot323
Contextual Info: 2N7002PW 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

BSS138PW

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Contextual Info: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

CMT2N7002

Abstract: MOSFET enhancement mode small signal mosfet CMT2N7002G CMT2N7002WG Small Signal MOSFET
Contextual Info: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ‹ High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These ‹ Voltage Controlled Small Signal Switch

SOT323 MOSFET P

Abstract: ST7401S32RG S 170 MOSFET TRANSISTOR ST7401 STP7401S32RG sot-323 transistor marking code 15 S32 SOT
Contextual Info: STP7401 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ‹ High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These ‹ Voltage Controlled Small Signal Switch

BP mosfet marking

Abstract: tsm2n7002k
Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive ID (mA) 2 @ VGS = 10V 300

Contextual Info: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ‹ High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These ‹ Voltage Controlled Small Signal Switch

SPN1443

Abstract: SPN1443S32RG
Contextual Info: SPN1443 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1443 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP7401

Abstract: SPP7401S32RG
Contextual Info: SPP7401 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP1433

Abstract: SPP1433S32RG SOT323 Marking 87 33YW
Contextual Info: SPP1433 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1433 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Contextual Info: ACE7400 N-Channel Enhancement Mode MOSFET Description The ACE7400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN1423

Abstract: SPN1423S32RG 23YW
Contextual Info: SPN1423 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1423 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.