SOT23 MARKING VA Search Results

Contextual Info: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage

Contextual Info: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER

ZXM41N0F

Contextual Info: ZXM41N0F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR

ZXM41N0F

Abstract: ZXM41N10F
Contextual Info: ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR

BAS20 SOT23

Abstract: bas21 jss BAS19 BAS20 BAS21
Contextual Info: BAS19.BAS21 3 Silicon Switching Diodes
High-speed, high-voltage switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking Pin Configuration Package BAS19 JPs 1=A 2 = n.c. 3=C SOT23 BAS20 JRs 1=A 2 = n.c. 3=C SOT23 BAS21 JSs 1=A 2 = n.c. 3=C SOT23 Maximum Ratings

sot23 DIODE marking AV

Abstract: marking D58 FLLD258 FLLD261 FLLD263 330 marking diode DSA003688
Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR FLLD258 ISSUE 2 – SEPTEMBER 1995 ✪ 1 2 1 3 2 3 SOT23 PART MARKING DETAIL – D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current

330 marking diode

Abstract: marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670
Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 – SEPTEMBER 1995 ✪ DIODE PIN CONNECTION 2 1 3 3 2 1 SOT23 PART MARKING DETAIL – P8A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current

BAL74

Abstract: BAR74 sot23 marking code 74
Contextual Info: BAL74/BAR74. Silicon Switching Diode
For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol

BAL74

Abstract: BAR74
Contextual Info: BAL74/BAR74. Silicon Switching Diode
For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol

marking 54 sot23

Abstract: ZC2812
Contextual Info: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L

MARKING SY SOT23

Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330

330 marking diode

Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
Contextual Info: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 – JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL – D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60

Contextual Info: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3
High collector current
High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage

Contextual Info: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 !  !  Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified

BAL74

Abstract: BAR74 BCW66
Contextual Info: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 !  !  Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3
High DC current gain
High collector current
Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package

Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 - SEPTEMBER 1995 O '- DIODE PIN CO NNECTION — N r^H 1 3 SOT23 PART MARKING DETAIL - P8A A BSO LU TE M A X IM U M RATINGS. PARAM ETER SYM BO L Repetitive Peak Reverse Voltage

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23

Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23

MV SOT23

Abstract: ZC2812E NA MARKING SOT23 test SOt23 ZC2811E NA SOT23 sot23 1V ZC2813E marking 54 sot23
Contextual Info: SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - NOVEMBER 1995 ZC2812E ZC2813E ✪ 1 1 2 1 3 2 3 3 2 ZC2813E ZC2812E SOT23 Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range

Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23

fgs npn

Abstract: BCV26 BCV27 BCV46 BCV47
Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23

BAT18

Abstract: ASS infineon
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

BAT18

Abstract: BAT18-05 BAT18-04
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking