SOT23/B9C TRANSISTOR Search Results

SOT23/B9C TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
BAV99	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 100 V, 0.215 A, SOT23	Datasheet
TBAV70	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23	Datasheet
TBAS16	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23	Datasheet
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23	Datasheet
BAV70	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 100 V, 0.215 A, SOT23	Datasheet

SOT23/B9C TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
B9D TRANSISTOR Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C marking b9d sot-23 Marking B9C MARKING B9E HMBT8550 MARKING B9C HMBT8050 Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. Features SOT-23 • High DC Current: hFE=150-400 at IC=150mA	Original	HE6813 HMBT8550 HMBT8550 OT-23 150mA HMBT8050 B9D TRANSISTOR PNP Transistor b9d SOT-23 marking B9D transistor B9C marking b9d sot-23 Marking B9C MARKING B9E MARKING B9C HMBT8050	PDF
B9D TRANSISTOR Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 HMBT8550 B9C MARK B9C transistor sot-23 Marking B9C Contextual Info: HI-SINCERITY Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current: hFE=150-400 at IC=150mA	Original	HE6813 HMBT8550 HMBT8550 OT-23 150mA HMBT8050 183oC 217oC 260oC B9D TRANSISTOR PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 B9C MARK B9C transistor sot-23 Marking B9C	PDF

Catalog Datasheet

Type

Document Tags

PDF

B9D TRANSISTOR

Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C marking b9d sot-23 Marking B9C MARKING B9E HMBT8550 MARKING B9C HMBT8050
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. Features SOT-23 • High DC Current: hFE=150-400 at IC=150mA

Original

HE6813 HMBT8550 HMBT8550 OT-23 150mA HMBT8050 B9D TRANSISTOR PNP Transistor b9d SOT-23 marking B9D transistor B9C marking b9d sot-23 Marking B9C MARKING B9E MARKING B9C HMBT8050

PDF

B9D TRANSISTOR

Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 HMBT8550 B9C MARK B9C transistor sot-23 Marking B9C
Contextual Info: HI-SINCERITY Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current: hFE=150-400 at IC=150mA

Original

HE6813 HMBT8550 HMBT8550 OT-23 150mA HMBT8050 183oC 217oC 260oC B9D TRANSISTOR PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 B9C MARK B9C transistor sot-23 Marking B9C

PDF