SOT-89 COMMON DIODE Search Results

Contextual Info: BAW56T Monolithic Dual Swithcing Diode Common Anode SWITCHING DIODES 200 mAMPERES 70 VOLTS P b Lead Pb -Free Features: * We Declare that the Material of Product Compliance With RoHS Requirements SOT-523F(SC-89) SOT-523F Outline Dimensions (SC-89) Unit:mm A

79a diode

Abstract: marking A1 SOT89 MARKING a1 d sot 89 a2 sot-89 w351 Marking gg SOT89
Contextual Info: BAW 79A . BAW 79D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 • Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW 79A GE 1 = A1 2 = C1/2 3 = A2 SOT-89 BAW 79B GF 1 = A1 2 = C1/2

diode marking gg 2a

Abstract: BAW79C 79AB
Contextual Info: Silicon Switching Diodes • • • BAW 79 A BAW 79 D For high-speed switching High breakdown voltage Common cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape Package GE GF

diode sot-89 marking code

Abstract: sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89
Contextual Info: • Silicon Switching Diodes SIEMEN S/ SPCL-, ÔS3L.320 OOlbSSÔ fl W Ê Z I P BAW 79 A SEMICONDS 32E D -B AW 79 D r-eS 'U • • • For high-speed switching High breakdown voltage Common cathode Typo Marking Ordering code for versions In bulk Ordering code for

476A diode

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low

diode T3 Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

BC327 BC337 noise figure

Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

BAT54M3T5G

Abstract: 419C-02 MMVL3700T1
Contextual Info: Schottky Diodes Device 1SS383T1 VR Volts CT @ V pF Max 25 40 IR @ V Volts VF Volts Max nA Max Volts 0.6 5000 40 Type Package Dual Independent SC−82AB Case 419C−02 BAT54CXV3T5 30 10 1.0 0.4 2000 25 Dual Common Cathode SC−89 Case 463C−03 RB751S40T1 40

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The LDAP222T1 device is housed in the SC-89 package which is designed

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode LBAV70LT1G • Pb−Free Package is Available. 3 MAXIMUM RATINGS TA = 25°C 1 Rating Symbol Max Unit Reverse Voltage Forward Current Peak Forward Surge Current VR IF 70 200 500 Vdc

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode • Pb−Free Package is Available. LBAW56LT1G 1 CATHODE 3 ANODE 2 CATHODE 3 ORDERING INFORMATION Device PACKAGE Shipping 1 LBAW56LT1G SOT-23 3000 Tape & Reel 2 LBAW56LT3G SOT-23 10000 Tape & Reel

RB110C

Abstract: diode 1436 DAN202KRVA c1251
Contextual Info: RO H M CORP 07E D | T f i S ñ ' m O D D E S T % ' 4 | tk Variable Capacitance Diodes EVariable Capacitance Diodes Electrical Characteristics Ta=25°C fi I Î I =25ÙC) Vr m VR Tj Tstg (V) (V) t°C) i°C) 1SV205 35 30 120 —3 0-12 0 1SV207 35 30 120 -3 0 -1 2 0

Contextual Info: Common Cathode Silicon Dual Switching Diode LDAN222T1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a

TE-5001

Abstract: MARKING W16 SOT23 HBM W20 rnx w16 DNA 1002 TVC 2 HB IEEE resistor color code RDA Q20 W16 sot 23 acd marking code
Contextual Info: NETWORKS Resistors / capacitors / diodes 3 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC 2 1 STRUCTURE 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 4 IDENTIFICATION TYPE COATING COLOR MARKING

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These

smd code book

Abstract: smd code book transistors B9-B3741 B352-B6155-X-X-7400 B3-B3342-X-X-7600
Contextual Info: Preface At present the conventional through-hole mounting technology used for printed circuit assem­ blies is increasingly superseded by surface mounting. Instead of inserting leaded components, special miniaturized components are directly attached and soldered to the PC board. These

DECT transmitter siemens

Abstract: BAR63 BAR63-04 DECT siemens SIEMENS MICROWAVE RADIO 8 GHz 6 GHz SMD PIN diode
Contextual Info: Knut Brenndörfer ● Jörg Lützner Antenna switches with PIN diodes for digital mobile communications In handhelds for digital mobile and cordless telephone systems, such as GSM and DECT, PIN diodes are starting to replace conventional duplex filters in the transmit/receive switch. For this

marking 3EM sot-23

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z Pb-Free Package is Available. Ordering Information LMBTH10LT1G Device Marking Shipping LMBTH10LT1G 3EM 3000/Tape&Reel LMBTH10LT3G 3EM 10000/Tape&Reel 3 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z Pb-Free Package is Available. 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1G 1 BASE Featrues 3 z Pb-Free Package is Available. 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage

full bridge pwm controller sg3526

Abstract: tl494 smps battery charger SOLUTION FOR SMPS USING TL494 MC78LC00H MOSFET HALF BRIDGE SMPS AC TO DC USING TL494 full bridge sg3526 application notes uc3844 smps power supply converter ic tl494 mosfet tl494 PWM dc to dc boost regulator SG3525A application note
Contextual Info: Power Supply Circuits In Brief . . . In most electronic systems, some form of voltage regulation is required. In the past, the task of voltage regulator design was tediously accomplished with discrete devices, and the results were quite often complex and costly.

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26