SOT-89 A Y 8 Search Results

2SC2883

Abstract: 2SC2883-O 2SC2883-Y 2SC2883Y marking GY sot89
Contextual Info: 2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  SOT-89 Low Voltage. 4 CLASSIFICATION OF hFE 1 2 3 A Product-Rank 2SC2883-O 2SC2883-Y Range

KTD1624

Abstract: mark A sot-89 MARK Y B Y device marking SOT89 transistor marking transistor marking c
Contextual Info: SEMICONDUCTOR KTD1624 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark Y KTD1624 * Grade A A,B,C Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only

mark A sot-89

Abstract: KTC4372 MARK A SOT89 transistor marking
Contextual Info: SEMICONDUCTOR KTC4372 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark A KTC4372 * Grade O O,Y Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

39 77 in sot-89 package

Contextual Info: Tape Dimensions And Orientation: Dimensions in mm 8 mm 12 mm SOT-23 \ p— A i ¡hH 7^7 SOT-89 SMDIP 11 _z 7 U - A l U — âJ U — d U - A L t.-a ] M M 8 . 3 12 -i 16 mm 15.7 3 Î 6. 3 i_ 1. 5 _3-^—. 4 . 1~* 1 . 6 1 1a t .A a J rJ y ! i Hi I" _ 3 _ ._ 9

S0T89

Abstract: 05T1 ic MARKING FZ D70G LC584 tfr 586
Contextual Info: SURFACE-MOUNT D71G.05T1 PHP POWER TRANSISTORS -150 VOLTS -50 mAMP, 500 mWATTS Designed for high voltage switching applications. Features: • High voltage: VCEO = - 150V • High transition frequency: fy = 120MHz C A S E ST Y LE SOT-89 • Pd =1 ~ 2W Mounted on ceramic substrate

Contextual Info: DP500F PNP Silicon Transistor PIN Connection Description • • • • Suit able for low volt age large current drivers Excellent h FE Linearit y Com plem ent ary pair wit h DN500 Swit ching Applicat ion Ordering Information Type N O. SOT-89 Pa ck a ge Code

BST60

Abstract: BST50
Contextual Info: • BST50 BST51 BST52 bbSBTBl 0025b37 T55 H A P X N AMER PHILIPS/DISCRETE b7E D y v N-P-N SILICON PLANAR DARLINGTON TRANSISTORS Silicon n-p-n planar Darlington transistors fo r industrial switching applications, e.g. p rin t hammer, solenoid, relay and lamp driving. Encapsulated in a m icrom iniature SOT-89 envelope.

sot89 footprint

Abstract: GB11 MSW11GB11-S89T MWS11GB11-G1 MWS11GB11-S1 Advanced RFIC RF transistor SOT-89
Contextual Info: MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm 5V . The same RFIC will be available later in an advanced Microsemi

78L05 sot-89

Abstract: sot-89 78L05 78L05 78l05 sot ELM78L05 ELM78L05CG SOT89 78L05 78L05 SOT89 78L05 L SOT-89
Contextual Info: ELM78L05CG um m ELM78L05 ¿ nan te ® ffi;,fi{ S ^ 0 K ^ -V ^ '> ^ h y ^ > 100mA f t » tfc , H S ?U ^U -^& © T ^ttW S P nnn*0>& < T ;3*.tT „ B E & ® A ffi* ffi;,1 i :100mA • :5V : SOT-89 • AV3> t ^ j t j —y Ilg A^ffiS bB^ Vin fflHSS * ( ^ - ^ s a )*

DIP18

Abstract: DIP20 SSOP030-P-0375
Contextual Info: K—II —i ? 3 — K— E NJRC 3 - Kvs. EIAJ 3 - KW (6 •/ ?fl±, ^ y ' r - a a —Kt L-tirB <t ¿K ir1) i 1 \ N JRCn —K B •■/•>—>>3 - Kt lattL t*») *1"*', E EIAJ n — K NJRC <DIP> * DIP008-P-0300 MTP5 SC-74A DIP14 »D IP014-P-0300 SOT-89

GB11

Abstract: MSW11GB11-S89T MWS11GB11-G1 MWS11GB11-S1
Contextual Info: C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm 5V . The same RFIC will be available later in an advanced Microsemi

TO-243AB

Abstract: Schottky Diode SOT-89 E10QS06 E10QS05
Contextual Info: SCHOTTKY BARRIER DIODE E10QS05 E10QS06 1.1A/50— 60V FEA TUR ES ° S i m i l a r to T O - 2 4 3 A B SOT-89 Cas e ° Surface Mount Device “ L o w F o r w a r d V o l t a g e Dro p ° L o w P o w e r Loss, High Efficiency « H i g h Su r g e C a p a b i l i t y

SDMP30

Abstract: T0-220F
Contextual Info: I . «t * # * - S a ü î T - 'J - KÍÍA5'J, S B Ä S f c i t f T C B t M t t f c ' â + „ ✓y -ir - >=n -iä -K ü ¿ V ttffí 0 ír K T I- S L i t „ m n 'i y 'r - i s l t f m , K M - K Suffix T O -9 2 T O -2 2 0 F T O -2 52 SOT-89 MTP-5 DIP SDIP

2SA1020Y

Abstract: 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 2SA661 TEC9015 2SA705 2SA1015L
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 Manufacturer Y(BR)CEO hFE Ie Max A fT (Hz) 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 120 2SA1326 TEDl602C NB122EH NB122FH

CL66

Abstract: 2N3565 2n2349 2N702 2N1388 2SC3368 BSX25 2S701 LOW-POWER SILICON NPN 2N1528
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 2SC3327 04020 2N2349 04021 MMBT3393 MMBT6515 2N1763 2SC563 2SC563 2SC563 Manufacturer 85 90 95 Ie Max A fT (Hz) 20 24 24 24 25 25 25 25 25 25 1.2k 50 120 135 25 25 25

LM337 sot23-5

Abstract: NCP584 "network interface cards" NCP585
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 8 ON Semiconductor Selector Guide − Analog Integrated Circuits Power Management Linear Voltage Regulators General Purpose Linear Voltage Regulators Fixed Output Voltage Positive Vout 80 mA MC78LCxx 200 mA MC33565

MARKING 3D SOT-363

Abstract: Schottky barrier sot-23 Marking 3D 3D SOD-523 LRB715WT1 SC-75 SC-89 3D marking sot23 3D SOT363 DIODE sot-23 Marking 3D DIODE SC59 Marking 3D
Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB715WT1 z Features Small surface mounting type SC-89 Low V F and low IR High reliability 3 zConstruction silicon epitaxial planar 2 z Pb-Free Package is Available. 1 SC-89 1 ANODE MAXIMUM RATINGS TA = 25°C

MARKING GA

Abstract: A779 baw78c
Contextual Info: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8

BC558AP

Abstract: TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 50 55 60 2SA467G•TM·O 2MA5090 2SA509G·TM·O 2SA509G·O ST8705 2SA608NP 2SA608SP 2N4917 2N5374 BSY59 ED1602D TED1802M ED1802M V741 V741 A5T4062 A8T4062 RN4062 ~~~~8~2 65 70 75 80 2N4062 BC558A

MP5W01A

Abstract: 2N6197 Motorola 2N6080 2N6207 2N6366 40327 1405 Motorola acrian inc 25C31 motorola tip29
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, Solid Stine Advned Semi Semi Inc NEC Corp JA NECElecslnc MitsubiElec MitsubiElec Solid Stlnc ToshibaCorp ToshibaCorp ~~g~:g~ ~atsusnlta I(C) 20 25 30 35 40 45 50 55 60 65 70 75 80 85 - 90 >= Ie Max

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The LDAP222T1 device is housed in the SC-89 package which is designed

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1774*T1 COLLECTOR 3 3 1 BASE 2 EMITTER 1 2 SC-89 !Absolute maximum ratings Ta=25°C Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage

1SS SOT-23

Abstract: 1SS TRANSISTOR
Contextual Info: TELEFUNKEN ELECTRONIC fllC D a^EDORb 0005275 R • AL6G BF 989 Marked with: M 89 YilLilFlUJNlKIIMl electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input' and Mixerstages especially for UHFTV-tuners up to 900 MHz

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4617*T1 COLLECTOR 3 3 1 BASE 2 EMITTER 1 2 z Pb-Free Package is Available. SC-89 !Absolute maximum ratings Ta=25°C Symbol Limits Collector-base voltage VCBO 60 V Collector-emitter voltage