SOT-8 MARKING SC Search Results

Contextual Info: DN4 Diode Termination Network / ESD Suppressor Schematic 4 3 1 2 Package SOT-143 Marking “ DN4 “ o Absolute Maximum Ratings: ( Ta = 25 C ) Symbol Parameter Value Units TJ Operating Temperature -40 to +85 C WV Supply Voltage 8 V IF DC Forward Current

CDA4S14L

Abstract: 8kv 1MHz DIODE electronic schematic
Contextual Info: Diode Network / ESD Suppressor COMCHIP www.comchiptech.com CDA4S14L Voltage: 8 Volts Current: 50 mA Package SOT-143 Feature Marking “ CDA4 “ This diode network is designed to provide two channels for active termination of highspeed data signals to eliminate signal

BAV170

Abstract: JXs sot
Contextual Info: Silicon Low Leakage Diode Array BAV170 • Low Leakage applications • Medium speed switching times • Common cathode Type Marking O rdering code 8-m m tape Package BAV170 JXs Q62702-A920 SOT 23 Maximum Ratings D escription Symbol Reverse voltage VR BAV170

transistor B3 OF

Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor
Contextual Info: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

CDA8

Contextual Info: COMCHIP Diode Network / ESD Suppressor www.comchiptech.com CDA8S03L Voltage: 8 Volts Current: 50 mA Package SOT-23 Feature Marking “ CDA8 “ This diode network is designed to provide an integrated solution for the active termination of a single high-speed data signal to eliminate

marking code vishay SILICONIX

Abstract: ic 71074
Contextual Info: SÌ1407DL Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS(V) -1 2 Id (A) •"DS(on) ( ß ) 0.130 @ VG S = -4 .5 V -1 .8 0.170 @ VGS = -2 .5 V -1 .5 0.225 @ VGs = -1 .8 V -1 .3 \V SOT-363 SC-70 (6-LEADS) Marking Code OC xx £ Lot Traceability

Contextual Info: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

Q62702-A615

Abstract: marking JB Q62702-A704 marking JB diode 74 MARKING CODE 74 MARKING
Contextual Info: Silicon Switching Diode • BAR 74 For high-speed switching Type 0 BAR 74 Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package JB Q62702-A615 Q62702-A704 SOT 23 Maximum ratings Parameter Symbol Ratings Unit Reverse voltage

BAR99

Abstract: marking jg
Contextual Info: Silicon Switching Diode • BAR 99 For high-speed switching Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BAR 99 JG Q62702-A610 Q62702-A388 SOT 23 Maximum ratings Parameter Symbol Ratings Unit Reverse voltage

Si1305DL

Contextual Info: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code

BH RE transistor

Contextual Info: PNP Silicon RF Transistor BF 569 Suitable fo r o scillators, m ixers and self-oscillating m ixer stages in UHF TV tu n ers Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 569 LH Q62702-F548 Q 62702-F869 SOT 23

P-Channel 1.8-V G-S MOSFET sot-323

Abstract: Si1305DL
Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = - 4.5 V - 0.92 0.380 @ VGS = - 2.5 V - 0.79 0.530 @ VGS = - 1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability

MARKING CODE LB

Abstract: SI1305DL
Contextual Info: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code

99399

Abstract: SI1305DL
Contextual Info: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code

Si1305DL

Abstract: Tr431
Contextual Info: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code

Contextual Info: SM405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s (V) -0 Id (A) rDS(on) (ß ) 0.125 9 VG S= -4 .5 V ± 1 .8 0.160 @ V qs = -2 .5 V ± 1 .6 0.210 @ V qs = -1 .8 v ± 1 .4 A V P V* SOT-363 SC-70 (6-LEADS) Marking Code OB

SI1405DL

Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

Contextual Info: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code

Si1405DL

Abstract: 8 A diode A.4 SOT363 MARKING
Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

Si1405DL

Abstract: A4V4
Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code

RB425D

Contextual Info: RB425D SOT-23-3L Schottky barrier Diodes + FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 + 2. 92¡ À0. 05 RB425D - Marking: D3L

Contextual Info: Si1305 Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = -4.5 V -0.92 0.380 @ VGS = -2.5 V - 0.79 0.530 @ VGS = -1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability and Date Code

Si1405DL

Abstract: SOT363
Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code