SOT-323 MARKING M Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes BAS40W/-04/-05/-06 SCHOTTKY DIODE SOT-323 FEATURES z Low forward voltage z Fast switching BAS40W MARKING:43• BAS40W-04 MARKING: 44 BAS40W-05 MARKING: 45 BAS40W-06 MARKING: 46

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes BAS40W/-04/-05/-06 SCHOTTKY DIODE SOT-323 FEATURES z Low forward voltage z Fast switching BAS40W MARKING:43h BAS40W-04 MARKING: 44 BAS40W-05 MARKING: 45 BAS40W-06 MARKING: 46

BAS40W

Abstract: BAS40W-04 BAS40W-05 BAS40W-06
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 BAS40W/-04/-05/-06 SCHOTTKY DIODE FEATURES z Low Forward Voltage z Fast Switching BAS40W MARKING: 43• BAS40W-06 MARKING: 46 BAS40W-05 MARKING：45 BAS40W-04 MARKING：44

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 BAS40W/-04/-05/-06 SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage z Fast Switching BAS40W MARKING: 43• BAS40W-06 MARKING: 46 BAS40W-05 MARKING：45 BAS40W-04 MARKING：44

702E

Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
Contextual Info: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT

BAS70W

Abstract: BAS70W-04 BAS70W-05 BAS70W-06 marking K74
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAS70W/-04/-05/-06 SCHOKKTY DIODE SOT-323 FEATURES z Low Turn-on voltage z Fast switching z Also available in lead free version BAS70W Marking: K73 BAS70W-04 Marking: K74

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes BAS70W/-04/-05/-06 SCHOKKTY BARRIER DIODE SOT-323 FEATURES z Low turn-on voltage z Fast switching z Also available in lead free version BAS70W Marking: K73 BAS70W-04 Marking: K74

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device LBC807-40WT1G Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel LBC807-40WT3G YL SOT-323 10000/Tape&Reel

LBC807-40WT1G

Abstract: LBC* MARKING LBC807-40WT3G e1 IC sot323 marking FR PNP SOT323
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel LBC807-40WT3G YL SOT-323 10000/Tape&Reel LBC807-40WT1G

Specialists

Abstract: BAS40W BAS40W-04 BAS40W-05 BAS40W-06 X_S marking XS marking
Contextual Info: C RECTRON RECTIFIER SPECIALISTS BAS40W -04-05-06 Mechanical Data Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Marking: See Diagrams Weight: 0.006 grams approx. SOT-323 n r TU f i U BAS40W Marking: 43, K43

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors MMST2222A SOT-323 TRANSISTOR NPN FEATURES y Epitaxial planar die construction y Complementary PNP Type available(MMST2907A) MARKING: K3P 1. BASE 2. EMITTER 3. COLLECTOR

MMST2222A

Abstract: MMST2907A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors MMST2222A SOT-323 TRANSISTOR NPN FEATURES y Epitaxial planar die construction y Complementary PNP Type available(MMST2907A) MARKING: K3P 1. BASE 2. EMITTER 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors MMST2222A SOT-323 TRANSISTOR NPN FEATURES y Epitaxial planar die construction y Complementary PNP Type available(MMST2907A) MARKING: K3P 1. BASE 2. EMITTER 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors MMST2222A SOT-323 TRANSISTOR NPN FEATURES y Epitaxial planar die construction y Complementary PNP Type available(MMST2907A) MARKING: K3P 1. BASE 2. EMITTER 3. COLLECTOR

ss8050 sot-323

Abstract: SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

BAV70W

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes BAV70W SOT-323 SWITCHING DIODES FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: KJA Maximum Ratings @TA=25℃ Parameter

BAW56W

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes BAW56W SOT-323 SWITCHING DIODES FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: KJC Maximum Ratings @TA=25℃ Parameter

ua 323

Abstract: DA204U
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes DA204U SWITCHING DIODES SOT-323 FEATURES z Bias circuits z Protection circuits MARKING: K Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS401 SOT-323 Schottoky Barrier Diode FEATURES Low forward voltage Low reverse current Small total capacitance 1 3 2 MARKING: D9 Maximum Ratings @Ta=25℃ Parameter Symbol

On semiconductor date Code

Abstract: SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363
Contextual Info: Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW-6, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363

MARKING 93 SOT89

Abstract: DIN iec 286-3 part 1 smd marking code eg On semiconductor date Code on semiconductor marking code sot SMD MARKING CODE 93 smd marking SOT343 smd sot-89 marking code SOT89 bc smd marking code BA RF
Contextual Info: S IE M E N S Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW6.MW4 Manufacturer EH co Date code Year / Month Type code Example Siemens EH CD 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363 Manufacturer

RB715F

Abstract: 3D sot323
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode RB715F SOT-323 SCHOTTKY BARRIER DIODE FEATURES: Extra small power mold type. Low VF High reliability MARKING: 3D Maximum Ratings @TA=25 ℃ Symbol Limits Unit Peak reverse voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS4 01 SOT-323 Schottoky Barrier Diode FEATURES Low forward voltage Lo w reverse current Small total capacitance 1 3 2 MARKING: D9 Maximum Ratings @Ta=25℃ Parameter Symbol