SOT-25 JB Search Results

MMBTH10

Contextual Info: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT- 23 225 mW Unit: inch mm .119(3.00) .110(2.80) .103(2.60) .047(1.20) .056(1.40) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA .083(2.10) .066(1.70) Case : SOT-23, Plastic

MMBTH10LT1

Abstract: MPSH10 MPSH11 jb transistor GFB30 MPSH10 S parameters
Contextual Info: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C

MPSH10 s parameters

Abstract: MMBTH10LT1 MPSH10 MPSH11
Contextual Info: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C

MMBTH10

Abstract: MPSH10 MPSH11 sot23 jb jb transistor
Contextual Info: MMBTH10 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Ptot 200 mW 1.8 mW / OC Total Device Dissipation FR-5 Board

MMBTH10

Abstract: MPSH10 MPSH11
Contextual Info: MMBTH10 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Ptot 200 mW 1.8 mW / OC Total Device Dissipation FR-5 Board

JB marking transistor

Abstract: transistor marking 3em transistor marking JB MMBTH10 J JB transistor marking 3EM sot-23 C40 SOT23
Contextual Info: MMBTH10 NPN Silicon VHF/UHF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value

JB MARKING SOT-23

Abstract: DELTA fan bfb
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25

514 transistor

Abstract: MMBC1622D7 b 514 transistor MMBC1622D6
Contextual Info: S A MS UN G SEMICO ND UCT OR INC MMBC1622D7 14E D | 7*11,4145 0007244 fl | NPN EPITAXIAL SILICON TRANSISTOR — — “ — — :- :- rT i < v AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C ! i Characteristic | Collector-Base Voltage

Contextual Info: KSC2756 KSC2756 Mixer for VHF TV Tuner • High Conversion Gain : GCE = 23dB TYP. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

KSC2756

Contextual Info: KSC2756 KSC2756 Mixer for VHF TV Tuner • High Conversion Gain : GCE = 23dB TYP. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

KSC2756

Abstract: OSC 100MHz 3ma5
Contextual Info: KSC2756 KSC2756 Mixer for VHF TV Tuner • High Conversion Gain : GCE = 23dB TYP. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

Contextual Info: MMBTH10W VHF/UHF Transistors COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE FEATURES: 2 2 EMITTER SOT-323(SC-70) * We declare that the material of product compliance with RoHS requirements. Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Symbol Value Unit

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

TRANSISTOR BDX

Abstract: TCA 875 BDX25 tca 271 tic 272 Bd 130 NPN transistor
Contextual Info: BDX25 NPN Silicon power transistor for high-quality AF output stages and switching applications BDX 25 is an epitaxial NPN silicon planar power transistor in the case 9 A 2 DIN 41 875 SOT-9 . The collector is electrically connected to the case. For insulated mounting

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10QLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 25 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23

LMBTH10LT1

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc SOT–23

sc70 marking 3Q

Abstract: MPS 425 5 pin sc70 marking 3Q LMBTH10QWT1
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc 2 SC-70/SOT-323

MPS 425

Abstract: LMBTH10WT1
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10WT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc SC-70/SOT–323

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc 2 SC-70/SOT-323

6A marking sot23

Abstract: BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING
Contextual Info: SEMICONDUCTOR BC817 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 6A 1 2 Item Marking Description Device Mark 6 BC817 hFE Grade A 16 A , 25(B) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method

BC147B

Abstract: BC148B BC147A BC149B BC148A BC149C BC148C BC148 BC157A BC158B
Contextual Info: ADVANI OERLIKON/ SEMICOND / 3bE ]> B OSblbMÖ O O O O D I O M M S E LI A s i l ic o n t r a n s i s t o r s NPN ‘ PNP Po =0.25W gTa«2B°C Caso: SOT-25 JBC147 BC147A >' BC147B < BC148 BC148A £ BC148B BC148C 080149 , BC149B /•BC149C f BC157 Vr BC157A , BC157B

KSC2755

Abstract: MARKING H1
Contextual Info: KSC2755 KSC2755 RF AMP, FOR VHF &TV TUNER • Low NF, High GPE • Forward AGC Capability to 30 dB • NF=2.0dB TYP. , GPE=23dB (TYP.) at f=200MHz 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC807

Contextual Info: SEMICONDUCTOR BC807 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 5A 1 2 Item Marking Description Device Mark 5 BC807 hFE Grade A 16 A , 25(B), 40(C) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method

KSC2755

Abstract: sot-23 Marking YRE marking H1
Contextual Info: KSC2755 KSC2755 RF AMP, FOR VHF &TV TUNER • Low NF, High GPE • Forward AGC Capability to 30 dB • NF=2.0dB TYP. , GPE=23dB (TYP.) at f=200MHz 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted