SOT-23 MARKING MB Search Results

MMBD501

Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148A/SE/CC/CA SOT-23 SWITCHING DIODES FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: MMBD4148A:5H MMBD4148CA :D6

BAS70

Contextual Info: BAS70 SOT-23 SURFACE MOUNT SCHOTTKY DIODE FEATURES * Low Turn-on voltage * Fast switching * Ultra-small surface mount package * Also available in lead free version * Marking BAS70 = 73 SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

MMBT1015

Abstract: marking a4 sot-23
Contextual Info: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MBT1815 2 1 3 MARKING A4 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR

TRANSISTOR b100

Contextual Info: UTCMMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR

Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR

Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR

mbt1015

Abstract: MMBT1815
Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR

Contextual Info: 350mW Switching Diode FMBD4148A/SE/CC/CA FMBD4148A/SE/CC/CA Data Sheet Mechanical Dimensions Description SOT-23 MARKING: FMBD4148A:5H Dimensions in mm FMBD4148CA :D6 FMBD4148CC :KD5 FMBD4148SE :D4 Maximum Ratings @TA=25C Parameter Symbol Peak Repetitive Peak reverse voltage

Contextual Info: Temic BF799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features • • High power gain Low noise figure 1 R iJ— E3T 2 9+9280 BF799 Marking: G2 Plastic case SOT 23

Transistor K 799

Abstract: marking G2 NPN planar RF transistor
Contextual Info: Tem ic BF799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features • High power gain • Low noise figure 1 H TJ- - ET3 2 »9 2 8 0 BF799 Marking: G2 Plastic case SOT 23

MMBTH24L

Abstract: MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • b3b72SiJ OO^bSGB ? ■ MOTb 'T ^ - O j SOT-23 TRANSISTORS (continued) S w itch in g T ran sisto rs Pinout: 1-Base, 2-Emitter, 3-Collector Devices are listed in order of descending f f . Switching Time (ns) Device hre Marking

MARKING a3 SOT-23

Contextual Info: Temic BF569/BF569R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For selfoscillating RF m ixer stages 1 R R E 3 1— 1 BF569 Marking: LH Plastic case SOT 23

marking 301 sot-23

Abstract: 301 marking code sot-23 MBD301G MMBD301LT1G marking 4T sot-23 MBD301 MMBD301 MMBD301LT1 MMBD301LT3 MMBD301LT3G
Contextual Info: MBD301, MMBD301LT1 Preferred Device Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

marking 12 SOT-363 amplifier

Abstract: marking code 04 sot-363 SOT 363 marking code 06 low noise SOT 363 marking CODE T4
Contextual Info: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces

SOT 363 marking CODE m4

Abstract: marking code 12 SOT-363 amplifier MBD110DW MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1
Contextual Info: MBD110DWT1, MBD330DWT1, MBD770DWT1 Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and

MBD110DW

Abstract: MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 marking code 04 sot-363
Contextual Info: MBD110DWT1, MBD330DWT1, MBD770DWT1 Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and

Contextual Info: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces

MBD701G

Abstract: MMBD701LT1 MMBD701LT1G MMBD701LT3 MMBD701LT3G MBD701
Contextual Info: MBD701, MMBD701LT1 Preferred Device Silicon Hot−Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

MBD101

Abstract: marking 556C
Contextual Info: ON Semiconductort MBD101 MMBD101LT1 Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer

H5 MARKING

Abstract: marking 12 SOT-363 amplifier
Contextual Info: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces

MBD110DW

Abstract: MBD110DWT1G MBD330DW MBD330DWT1G MBD770DW MBD770DWT1G MMBD101LT1 MMBD301LT1 MMBD701LT1 SOT 363 marking code 06 low noise
Contextual Info: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and

Contextual Info: ON Semiconductort MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other

709 SOT23

Abstract: marking 4T sot-23
Contextual Info: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other