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    SOT-23 MARKING CODE C3 Search Results

    SOT-23 MARKING CODE C3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    		Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    5447/BEA
    		Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) PDF Buy
    54LS42/BEA
    		Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) PDF Buy
    54LS190/BEA
    		Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    TC4511BP
    		Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Datasheet

    SOT-23 MARKING CODE C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Bi 3101 A

    Abstract: transistor ITT 108 MMBT3904
    Contextual Info: MMBT3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBT3904 is recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter. Marking code 3N SOT-23 Plastic Package Weight approx. 0.008 g


    OCR Scan     		MMBT3906 MMBT3904 OT-23 Bi 3101 A transistor ITT 108 PDF

    b631 transistor

    Abstract: S3 marking DIODE b631 Q62702-B631
    Contextual Info: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23


    Original     		Q62702-B631 OT-23 Jan-09-1997 b631 transistor S3 marking DIODE b631 Q62702-B631 PDF

    SMD Code 12W SOT-23

    Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
    Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED


    OCR Scan     		OT-23 350mW CMPT2222A CMPT2369 CMPT24 CMPT2907A CMPT3640 CMPT3646 CMFT3904 CMPT3906 SMD Code 12W SOT-23 CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89 PDF

    V = Device Code

    Contextual Info: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G02 353/SC V = Device Code PDF

    marking CODE W2D

    Abstract: marking w2d
    Contextual Info: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		MC74VHC1G126 353/SC marking CODE W2D marking w2d PDF

    V = Device Code

    Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
    Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


    Original     		MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D PDF

    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Contextual Info: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


    Original     		MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 PDF

    V = Device Code

    Abstract: MC74VHC1G00
    Contextual Info: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G00 353/SC V = Device Code PDF

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Contextual Info: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08 PDF

    V = Device Code

    Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
    Contextual Info: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    Original     		MC74VHC1GT32 V = Device Code diode Marking code v3 on semi aa sot353 TOREX TOP CODE PDF

    V = Device Code

    Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
    Contextual Info: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G86 353/SC V = Device Code vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A PDF

    V = Device Code

    Abstract: diode T132
    Contextual Info: MC74VHC1GU04 Unbuffered Inverter The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1GU04 MC74VHCU04 MC74VHC1G04 MC74VHC04 V = Device Code diode T132 PDF

    torex new marking

    Abstract: TOSHIBA el suffix V = Device Code
    Contextual Info: MC74VHC1G03 2-Input NOR Gate with Open Drain Output The MC74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low


    Original     		MC74VHC1G03 torex new marking TOSHIBA el suffix V = Device Code PDF

    ON Semiconductor marking

    Abstract: marking code v6 29 DIODE V = Device Code diode Marking code v3 marking t08 TOSHIBA el suffix Wafer Fab Plant Codes ST t02 y95 H2 sc88a
    Contextual Info: MC74VHC1GT02 2-Input NOR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT02 is a single gate 2–input NOR fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		MC74VHC1GT02 ON Semiconductor marking marking code v6 29 DIODE V = Device Code diode Marking code v3 marking t08 TOSHIBA el suffix Wafer Fab Plant Codes ST t02 y95 H2 sc88a PDF

    ON Semiconductor marking

    Abstract: marking VU sot363 V = Device Code SOT23 "Marking Code" t04 ON TSOP6 MARKING 6L marking 62 ON Semi VM MARKING CODE SOT353 marking code V6 diode
    Contextual Info: MC74VHC1GT86 2-Input Exclusive OR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky


    Original     		MC74VHC1GT86 ON Semiconductor marking marking VU sot363 V = Device Code SOT23 "Marking Code" t04 ON TSOP6 MARKING 6L marking 62 ON Semi VM MARKING CODE SOT353 marking code V6 diode PDF

    SOT-353 MARKING VL

    Contextual Info: MC74VHC1G125 Noninverting 3-State Buffer The MC74VHC1G125 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		MC74VHC1G125 SOT-353 MARKING VL PDF

    wz 74 marking

    Abstract: t138a V = Device Code
    Contextual Info: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		MC74HC1G02 MC74HC 353/SC wz 74 marking t138a V = Device Code PDF

    marking t132

    Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
    Contextual Info: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G08 353/SC marking t132 marking code V6 diode V = Device Code PDF

    vsop8 package outline

    Abstract: vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc
    Contextual Info: MC74VHC1G09 2-Input AND Gate with Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G09 vsop8 package outline vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc PDF

    H2D MARKING CODE

    Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
    Contextual Info: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		MC74HC1G08 MC74HC 353/SC H2D MARKING CODE marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3 PDF

    PC 74 HCT 32 P

    Abstract: U-046 V = Device Code
    Contextual Info: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low


    Original     		MC74VHC1G01 PC 74 HCT 32 P U-046 V = Device Code PDF

    marking H5 sot 23-5

    Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
    Contextual Info: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G132 marking H5 sot 23-5 vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code PDF

    V = Device Code

    Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
    Contextual Info: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		MC74VHC1G135 V = Device Code ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 PDF

    V = Device Code

    Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
    Contextual Info: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		MC74VHC1G04 353/SC V = Device Code marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode PDF