SOT-23 MARKING 2T E Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

MMBT4403

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Marking br sot23 Transistor

Abstract: MMBT4403 2T sot-23 sot23 2t marking pc sot-23 transistor BR SOT23 MMBT4403 2T transistor 2T Transistor 2 a sot23 sot 23 transistor
Contextual Info: MMBT4403 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Switching transistor MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage

smd marking cb SOT23 transistor

Abstract: MARKING SMD PNP TRANSISTOR 2t transistor smd 2t x TRANSISTOR SMD 2t sot23 CMBT4403 TRANSISTOR SMD 85 330 smd transistor 2T 2T smd marking sot-23 2T SMD equivalent Min01
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

smd transistor 2T

Abstract: 2T SMD TRANSISTOR MARKING SMD PNP TRANSISTOR 2t CMBT4403
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T

Contextual Info: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

MMBT4403 UTC

Contextual Info: UTC MMBT4403 PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. 2 1 MARKING 3 2T SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

MMBT4403LT1

Abstract: MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G
Contextual Info: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage

MMBT4403LT1

Contextual Info: MMBT4403LT1 Switching Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT4403LT1 1. BASE TRANSISTOR（PNP ） 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W （Tamb=25℃） Collector current ICM : -0.6

Contextual Info: S C S -IH O M S O N I0 J I« W B e S Í t p s Ü ocÍ STPS240CE SCHOTTKY RECTIFIER PRELIMINARY DATA . • ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Marking Shipping 1 LMBT4403LT1G 2T 3000/Tape & Reel LMBT4403LT3G

MMBT4403LT1

Contextual Info: ON Semiconductort Switching Transistor MMBT4403LT1 PNP Silicon 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –600 mAdc Symbol Max

MMBT4403LT1

Contextual Info: MOTOROLA Order this document by MMBT4403LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT4403LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40

MMBT4403LT1

Contextual Info: ON Semiconductort Switching Transistor MMBT4403LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –600 mAdc Symbol Max Unit

sot 23 marking code 2t

Abstract: MMBT4403LT1 MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G
Contextual Info: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40

Contextual Info: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40

Contextual Info: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40

MMBT4403LT1

Abstract: MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G
Contextual Info: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40

SMMBT4403LT1G

Abstract: SMMBT4403L
Contextual Info: MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: : S v m Se m i : SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT4403LT1 TRANSISTOR PNP FEATURES Power dissipation PCM : 0.3 W (Tainb=25 °C) Collector current Icm : -0.6 A Collector base voltage V (br)cbo :“ 40 V Operating and storage junction temperature range