b631 transistor
Abstract: S3 marking DIODE b631 Q62702-B631
Contextual Info: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23
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q62702-b631ot-23jan-09-1997b631 transistor+2s3 marking diodeb631
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MV2105
Abstract: MMBV2108LT1G
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state
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mmbv2101lt1mv2105mv2101mv2109+3lv2209mmbv2101lt1/dmmbv2108lt1g
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SOT23 MARKING code 4W
Abstract: MV2109 MMBV2105L 65t marking diode mv2105 sot-23 297 marking marking 297 sot-23 marking code 4h diode SOT23 65T MMBV2109LT1 equivalent
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state
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mmbv2101lt1mv2105mv2101mv2109+12lv2209ot-23mmbv2101lt1/dsot23 marking code 4wmmbv2105l65t markingdiode mv2105sot-23 297 markingmarking 297 sot-23marking code 4h diodesot23 65tmmbv2109lt1 equivalent
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ON Semiconductor marking
Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Contextual Info: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
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dld601/dmar-2001r14525dld601+10on semiconductor markingfairchild marking codes sot-23w2d sot23diode w2dsot-353 marking l5marking code vk, sot-363va sot-3531c sot353mc74vhc1g135vsop8 package outline
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marking code ER sot 143
Abstract: HSMS-2827 SCHOTTKY DIODE SOT-143 AN1124 HSMS-286 marking cross ref sot-143 HSMS-2822 variable power divider 282P HSMS-28
Contextual Info: HSMS-282x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give
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hsms-282xhsms282xot-323sc70-3+16ot-363sc70-6hsms-282x-tr2ghsms-282x-tr1ghsms-282x-blkg5989-4030enmarking code er sot 143hsms-2827schottky diode sot-143an1124hsms-286marking cross ref sot-143hsms-2822variable power divider282phsms-28
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variable power divider
Abstract: marking code C9 282P HSMS-282K common base mixer circuit analysis marking cross ref sot-143 hsms2822 schottky diode limiter application note
Contextual Info: HSMS-282x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give
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hsms-282xhsms282xot-323sc70-3+13ot-363sc70-6hsms-282x-tr2ghsms-282x-tr1ghsms-282x-blkg5989-4030envariable power dividermarking code c9282phsms-282kcommon base mixer circuit analysismarking cross ref sot-143hsms2822 schottky diode limiter application note
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ct 1061
Abstract: marking code 4h diode
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8−100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general
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mmbv2101lt1mv2105mv2101mv2109+5lv2205lv2209ot-23ct 1061marking code 4h diode
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LV2205
Abstract: LV2209 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MV2101 MV2105 MV2109 MERIT INCH
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8–100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general
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mmbv2101lt1mv2105mv2101mv2109+8lv2205lv2209r14525mmbv2101lt1/dmmbv2103lt1mmbv2105lt1mmbv2107lt1merit inch
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diode marking code C3 sot23
Abstract: C3 SOT23-3 MMBV105GLT1 MMBV105GLT1G marking C3 sot-23 SOT-23 marking code 104 sot-23 marking code C3 MARKING C25 SOT23 sot-23 DIODE marking code c3 marking code c3 sot 23
Contextual Info: MMBV105GLT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • Controlled and Uniform Tuning Ratio
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mmbv105glt1diode marking code c3 sot23c3 sot23-3mmbv105glt1g+6marking c3 sot-23sot-23 marking code 104sot-23 marking code c3marking c25 sot23sot-23 diode marking code c3marking code c3 sot 23
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V = Device Code
Contextual Info: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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mc74vhc1g02353/scv = device code |
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marking CODE W2D
Abstract: marking w2d
Contextual Info: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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mc74vhc1g126353/scmarking code w2dmarking w2d |
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V = Device Code
Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS
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mc74vhc1gt50v = device codegate marking code vx sot23and8004+1and8004/d
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diode Marking code v3
Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Contextual Info: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.
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mc74hc1g14mc74hc353/scdiode marking code v3+6sot 23-5 marking code h5v = device codemarking h5 sot 23-5wafer fab plant codes stfairchild mosxaa64
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V = Device Code
Abstract: MC74VHC1G00
Contextual Info: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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mc74vhc1g00353/scv = device code |
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Wafer Fab Plant Codes ST
Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Contextual Info: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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mc74hc1g32mc74hc353/scwafer fab plant codes st+8v = device codet138-amarking 563 fairchildalpha new year date codemarking t132marking sbndiode m7 smphep08
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V = Device Code
Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
Contextual Info: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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mc74vhc1gt32v = device codediode marking code v3 on semiaa sot353+1torex top code
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PC 74 HCT 32 P
Abstract: U-046 V = Device Code
Contextual Info: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low
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mc74vhc1g01pc 74 hct 32 pu-046v = device code |
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marking H5 sot 23-5
Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
Contextual Info: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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mc74vhc1g132marking h5 sot 23-5vsop8 package outlinesot 23-5 marking code h5+7date code marking toshiba nandwafer fab plant codes stpackage marking code" 162marking code vt sot 23-5sot 23-5 marking code 162soic 8 marking codev = device code
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V = Device Code
Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
Contextual Info: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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mc74vhc1g135v = device codealpha new sot year date codesot 23-5 marking code h5+1marking h5 sot 23-5
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V = Device Code
Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
Contextual Info: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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mc74vhc1g04353/scv = device codemarking code vk, sot-353+5gate marking code vx sot23wz 74 markingfairchild marking codes sot-23marking code vk, sot-363marking code v6 diode
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V = Device Code
Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
Contextual Info: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky
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mc74vhc1g05v = device codediode marking code v3alpha new sot year date code+2051 mpcand8004
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AND8004/D
Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
Contextual Info: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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mc74hc1g00mc74hc353/scand8004/d+6v = device codedate code marking toshiba nandpin diode marking code wkmarking sbnh1d markingand8004
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t08 sot-23
Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
Contextual Info: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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mc74vhc1gt08t08 sot-23on semiconductor markingv = device code+7marking l5 sot363vk sot-363marking codes fairchild 61vk sot-353on alpha year and work weeksot-353 marking w5diode marking code v3
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T138A
Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
Contextual Info: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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mc74hc1gu04mc74hc353/sct138a+8u04 fairchildwafer fab plant codes stpin diode marking code wku04 fairchild markingalpha new year date codediode m7 smpmarking code vhcv = device code
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