SOT-23 CODE LG Search Results

DIODE WJ SOt23

Abstract: 7.a sot-23 marking BSs sot23
Contextual Info: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on

sot marking code ZS

Contextual Info: BF 775A NPN Silicon RF Transistor • Especially suitable for amplifiers and TV-sat tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 775A SOT-23 LGs Q62702-F1250 1=B

marking BSs sot23

Abstract: BSS-229 s 100 139 004 BSS229 marking BSs sot23 siemens
Contextual Info: SIEMENS SIPMOS Small-Signal Transistors VDS lD ^ D S o n • • • BSS 139 BSS 229 = 250 V = 0 .0 4 /0 .0 7 A = 100 Q N channel Depletion mode Packages: SOT-23, T O -9 2 1) Type Marking Ordering code fo r version in bulk Ordering code Ordering code

BAS 16 MARKING

Abstract: marking A6s diode A6s sot 23 sot-23 MARKING A6S lg-330 lg330
Contextual Info: SIEMENS Silicon Switching Diode BAS 16 • For high-speed switching Type Marking Ordering Code tape and reel BAS 16 A6s Q62702-F739 Pin Configuration Package1) SOT-23 * 01-o 1 CHA07002 Maximum Ratings Parameter Symbol

Bi 3101 A

Abstract: transistor ITT 108 MMBT3904
Contextual Info: MMBT3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBT3904 is recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter. Marking code 3N SOT-23 Plastic Package Weight approx. 0.008 g

Contextual Info: SIEMENS BCR 148 NPN Silicon Digital Transistor ►Switching circuit, inverter, interface circuit, driver circuit » Built in bias resistor Ri=47kfl, R2=47kfi Type Marking Ordering Code Pin Configuration BCR 148 WEs Q62702-C2261 1 =B Package 2= E 3=C SOT-23

Q62702-C2371

Contextual Info: SIEMENS BCR 553 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=2.2kQ, Rz=2.2k£2 Type Marking Ordering Code Pin Configuration BCR 553 XBs 1=B Q62702-C2371 Package 2=E 3=C SOT-23

Contextual Info: SIEMENS BCR 562 PNP Silicon Digital Transistor » Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7kü, R2=4.7kiì Type Marking Ordering Code Pin Configuration BCR 562 XUs Q62702-C2356 1=B Package 2=E 3=C SOT-23

C1740

Abstract: C1454 Q62703-Q1355 Q62703-Q1359 o627 LG3380-EH G1453
Contextual Info: SIEMENS AKT IENGESELLSCHAF >47E D fiE35t.GS DQ5b735 ^ « S I E G M Lumineszenzdioden Light Emitting Diodes Emissionsfarbe Type ^-peak Emission color Gehàusefarbe I» 2q>* Bestellnummer Case color IF= 10 rr A (50% U Ordering code mcd deg. nm Niedrigstrom-LEDs im Gehäuse SOT 23

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

1SS SOT-23

Abstract: 1SS TRANSISTOR
Contextual Info: TELEFUNKEN ELECTRONIC fllC D a^EDORb 0005275 R • AL6G BF 989 Marked with: M 89 YilLilFlUJNlKIIMl electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input' and Mixerstages especially for UHFTV-tuners up to 900 MHz

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

SOT 86 MARKING 03

Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
Contextual Info: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S

transistor bd 126

Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

BF 234 transistor

Abstract: BC 194 TRANSISTORS transistor bf 196 Electronic car ignition circuit BF 194 npn transistor DIN I diode marking code BUX BF 194 transistor BUX37 transistor marking code 41 BF
Contextual Info: 17E T> m TELEFUNKEN ELECTRONIC ÔRSOÜSfc. 000*1577 1 • ALG6 . B U X 37 TnMLUFSBMCSdiii] electronic C fe â h v i 1 ie h n o lo 6 * s Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application

TRANSISTOR BC 208

Abstract: transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U
Contextual Info: i l . •.-.— 17E D TELEFUNKEN ELECTRONIC ■ 0 1 2 0 0 ^ 0001451 1 BU 207 * BU 208 • BU 209 TTf Li(FTOKIM electronic C re itM le c h n o to g w s r - 33-07 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in colour TV-receivers

transistor BF 164

Abstract: buv 47 i L61A
Contextual Info: «I TELEFUNKEN ELECTRONIC 17E D WÊ Ô^SOO^fc. QDQTSM? 3 BUV 47 • BUV 47 A m iitPW K iN l electronic CrM lfW Tschnotog*«* T - 3 V 13 Silicon NPN Power Transistors Applications: Switching mods power supply, inverters, motor control and relay driver Features:

transistor BUX 83

Abstract: bux c st bux bux 47 MARKING BUX bc 201 transistor st bux c Marking 47 transistor BUX transistor k 2718
Contextual Info: 17E D TELEFUNKEN ELECTRONIC • â^SQQ^b OOCHSÔ1 BUX 47 • BÜX 47 A TTiiLSiPIUlMKIiM electronic CrMin*üKhnotoö*«* Silicon NPN Power Transistors ^ ^ Applications: Switching mode power supply, inverters, motor control, and relay driver Features: • In triple diffusion technique

BF964

Contextual Info: TELEFUNKEN ELECTRONIC TdUHFÜSWIiia electronic filC D • fl^DO^b 0005254 1 * A L 6 G ~r- BF B r 964 j Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mlxerstages especially for VHF TV-tuners Futures:

buv48

Abstract: BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fl^SOEHb DOG^SSB BUV 48 • BUV 48 A ■¡nULKPHÄIN electronic CrwtN*Tfcchootog* Silicon NPN Power Transistors Applications: Switching mode power supply, inverters, motor control and relay driver Features; • In triple diffusiion technique

BF960

Abstract: transistor ft 960
Contextual Info: TELEFUNKEN ELECTRONIC Ô1C D 0 1 2 0 0 % 000S530 T • ALG6 ■ r - 3 t TfEtLitFyKlKiKlelectronic ~ *-5 * BF 960 Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz

transistor Bf 966

Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
Contextual Info: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners

transistor k 3562

Abstract: transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF
Contextual Info: TELEFUNKEN ELECTRONIC ¥ilLilFO*lKl electronic 61C D • S^Dmb '7s 3 / -2 - S T ' 00052b2 0 BIAL66 BF 966 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners