SOT-23 ASE Search Results

K2X pnp

Abstract: MMBT3904 MMBT4401 MMBT4403
Contextual Info: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching SOT-23 -H .h -a TO P VIEW Mechanical Data_ Case: SOT-23, Molded Plastic

sot23 marking code 8pf

Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V

Contextual Info: OPA337 OPA2337 B U R R -B R O W N OPA33S" OPA2338" M/croSIZE, Single-Supply CMOS OPERATIONAL AMPLIFIERS MicroAmplifierMSeries FEATURES DESCRIPTION • M/croSIZE PACKAGES: SOT-23-5<1 SOT-23-8 • SINGLE-SUPPLY OPERATION • RAIL-TO-RAIL OUTPUT SWING • FET-INPUT: lB = 10pA max

ltkh

Abstract: marking LTIZ LGH3C100K24 LTIZ LT1615-1 LTIZ SOT A47 SOT23 R 4R7 inductor SOf-23 LMK316BJ475
Contextual Info: u im LT1615/LT1615-1 TECHNOLOGY M ic ro p o w e r Step-Up D C /D C C onverters in SOT-23 FEATURES DE9CRIFT10n • Low Q iescent Cirrent: 20|aAin Active Mode <1 oAin Shutdown Mode ■ Operates with V|N as Low as 1V ■ Low Vcesat Switch: 250mV at 300mA ■ Tiny 5-Lead SOT-23 Package

Contextual Info: BAS70/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for T ransient and ESD Protection SOT-23 TOP VIEW Mechanical Data_ • • • • 1e 1 C ase: SO T-23, M olded Plastic

Contextual Info: IC IS BAT54 /A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for T ransient and ESD Protection SOT-23 u Mechanical Data_ • • • • • C ase: SO T-23, M olded Plastic Term inals: S olderable per M IL-STD -202,

Contextual Info: BAS40/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for T ransient and ESD Protection SOT-23 II t TOP VIEW • • • u 4 r;| C ase: SO T-23, M olded Plastic Term inals: S olderable per M IL-STD -202,

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBA811C7 I ME D | 7^4142 00G723G fl | PNP EPITAXIAL SILICON TRANSISTOR T DRIVER TRANSISTOR - & - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-B ase Voltage Vc8 0 50 V CoHector-Emltter Voltage

Contextual Info: MMBT4401 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

Contextual Info: KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltaae Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: MMBT3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector Current Collector Dissipation Storage Temperature

Contextual Info: KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Ch a ra cteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

MMBv105

Abstract: MMBV105G MMBV105GL MMBV105GLT1
Contextual Info: SILIC O N EPICAP DIODE MMBV105GLT1* . . . designed in the Surface Mount package for general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. C ASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and Uniform Tuning Ratio

Contextual Info: BS850 DMOS Transistors P-Channel SOT-23 _ FEATURES High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown _ MECHANICAL DATA Dimensions in inches and (millimeters)

transistor mark l6

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

BT3904

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT3903 me q 7 cib 4],42 GGG7Et.Q t> | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR I SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C) Characteristic Collector-Base Voltage Coffector-Emitter Voltage Emitter-Base Voltage

2tk transistor

Contextual Info: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO

2FK transistor

Contextual Info: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units

Contextual Info: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units

SOT-23 2xk

Abstract: 2xk transistor npn
Contextual Info: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO

2FK transistor

Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor
Contextual Info: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units

transistor 1AK

Abstract: 1AK marking transistor MMBT3904K 1ak transistor
Contextual Info: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units

diode ep sod-323

Abstract: 1N4148 SOD-323 A
Contextual Info: MCL4148.MCL4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the devices 1N4148 and 1N4448 respectively • M icro Melf package

SOT 23 1ft

Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
Contextual Info: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*