SOT 363 MARKING CODE 01 Search Results
SOT 363 MARKING CODE 01 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA |
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5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA |
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54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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SOT 363 MARKING CODE 01 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MARKING PARI SC70-6
Abstract: sot363 marking qs sm905
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OCR Scan |
1902DL OT-363 SC-70 S-99188-- 01-Nov-99 MARKING PARI SC70-6 sot363 marking qs sm905 | |
Si1901DL
Abstract: D234
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Si1901DL OT-363 SC-70 S-01886--Rev. 28-Aug-00 D234 | |
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Contextual Info: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code |
OCR Scan |
OT-363 SC-70 S-01886-- 28-Aug-00 1901DL | |
sot363 marking code 385
Abstract: SOT 363 marking 67 MUN5211DW1T1 MUN5211DW1T1G MUN5212DW1T1 MUN5212DW1T1G MUN5213DW1T1 MUN5213DW1T1G MUN5214DW1T1 MUN5214DW1T1G
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MUN5211DW1T1 OT-363 MUN5211DW1T1/D sot363 marking code 385 SOT 363 marking 67 MUN5211DW1T1G MUN5212DW1T1 MUN5212DW1T1G MUN5213DW1T1 MUN5213DW1T1G MUN5214DW1T1 MUN5214DW1T1G | |
SOT 363 marking 67
Abstract: MUN5111DW1T1 MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 MUN5114DW1T1G marking CODE 001
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MUN5111DW1T1 OT-363 MUN5111DW1T1/D SOT 363 marking 67 MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 MUN5114DW1T1G marking CODE 001 | |
MBD110DW
Abstract: MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 marking code 04 sot-363
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MBD110DWT1, MBD330DWT1, MBD770DWT1 OT-363 OT-363 OT-23 MBD110DWT1/D MBD110DW MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 marking code 04 sot-363 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These |
Original |
LMUN5111DW1T1G | |
transistor marking 7D
Abstract: MUN5214DW1T1G SMUN5213DW1T1G transistor marking code 7e SOT363 MARKING CODE 7M SMUN5235DW1T1G
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MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1GSeries MUN5211DW1T1G OT-363 MUN5211DW1T1/D transistor marking 7D MUN5214DW1T1G SMUN5213DW1T1G transistor marking code 7e SOT363 MARKING CODE 7M SMUN5235DW1T1G | |
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Contextual Info: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base |
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MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1Gâ MUN5211DW1T1G MUN5211DW1T1/D | |
SMUN5211DW1T1G
Abstract: SMUN5235DW1T1G SMUN5214DW1T1G NSVMUN5212 MUN5214DW1T1G SMUN5233DW1T1G MUN5211DW1T1G MUN5233DW1T1G
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MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1GSeries MUN5211DW1T1G OT-363 MUN5211DW1T1/D SMUN5211DW1T1G SMUN5235DW1T1G SMUN5214DW1T1G NSVMUN5212 MUN5214DW1T1G SMUN5233DW1T1G MUN5233DW1T1G | |
SBC857B
Abstract: BC856BDW1T1G BC857BDW1T1G SBC857CDW1T1G bc857 sot363 BC557 SBC856 SBC856BDW1T1G SBC857BDW1T1G marking 12 SOT-363 amplifier
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BC856BDW1T1G, SBC856BDW1T1GSeries, BC857BDW1T1G, SBC857BDW1T1GSeries, BC858CDW1T1G OT-363/SC-88 AEC-Q101 BC856, SBC856 SBC857B BC856BDW1T1G BC857BDW1T1G SBC857CDW1T1G bc857 sot363 BC557 SBC856BDW1T1G SBC857BDW1T1G marking 12 SOT-363 amplifier | |
BC856
Abstract: BC857BDW1T1G
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BC856BDW1T1G, SBC856BDW1T1Gâ BC857BDW1T1G, SBC857BDW1T1Gâ BC858CDW1T1G 363/SCâ BC856, SBC856 BC856BDW1T1/D BC856 BC857BDW1T1G | |
MUN5211DW1T1
Abstract: MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5237DW1T1
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MUN5211DW1T1 OT-363 MUN5211DW1T1/D MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5237DW1T1 | |
SMUN5113DW1T1G
Abstract: SMUN5111DW1T1G SOT 363 marking 67 MUN5114DW1T1G
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MUN5111DW1T1G SMUN5111DW1T1G OT-363 SC-88 419Bble MUN5111DW1T1/D SMUN5113DW1T1G SOT 363 marking 67 MUN5114DW1T1G | |
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463AContextual Info: MUN5116DW1, NSBA143TDXV6 Dual PNP Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5116DW1, NSBA143TDXV6 DTA143TD/D 463A | |
marking 32 SOT-363Contextual Info: MUN5216DW1, NSBC143TDXV6 Dual NPN Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5216DW1, NSBC143TDXV6 DTC143TD/D marking 32 SOT-363 | |
BC847 SOT363
Abstract: 1f t sot-363 transistor BC557 base collector emitter SOT363 Marking 1B operation of BC557 TRANSISTOR T1 BC558 BC846 BC846B BC846BDW1T1 BC847
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BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 OT-363/SC-88 BC846 BC847 BC848 BC846BDW1T1/D BC847 SOT363 1f t sot-363 transistor BC557 base collector emitter SOT363 Marking 1B operation of BC557 TRANSISTOR T1 BC558 BC846 BC846B BC846BDW1T1 BC847 | |
marking code 7GContextual Info: MUN5230DW1, NSBC113EDXV6 Dual NPN Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5230DW1, NSBC113EDXV6 DTC113ED/D marking code 7G | |
7L Marking
Abstract: 463A
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Original |
MUN5234DW1, NSBC124XDXV6 DTC124XD/D 7L Marking 463A | |
BC557 sot package
Abstract: BC846 BC846BDW1T1 BC847 BC847BDW1T1 BC847CDW1T1 BC848 BC848BDW1T1 BC848CDW1T1 BC848B
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BC846BDW1T1, BC847BDW1T1 BC848BDW1T1 363/SC BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1 BC846 BC557 sot package BC846 BC846BDW1T1 BC847 BC847CDW1T1 BC848 BC848CDW1T1 BC848B | |
SOT363 MARKING CODE 7N
Abstract: marking 32 SOT-363
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Original |
MUN5236DW1, NSBC115EDXV6 DTC115ED/D SOT363 MARKING CODE 7N marking 32 SOT-363 | |
463AContextual Info: MUN5134DW1, NSBA124XDXV6 Dual PNP Bias Resistor Transistors R1 = 22 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
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MUN5134DW1, NSBA124XDXV6 DTA124XD/D 463A | |
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Contextual Info: MUN5231DW1, NSBC123EDXV6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor |
Original |
MUN5231DW1, NSBC123EDXV6 DTC123ED/D | |
BC858CDW1T1
Abstract: BC856 BC856BDW1T1 BC857 BC857BDW1T1 BC857CDW1T1 BC858 BC858BDW1T1 Dual General Purpose Transistors SC88 BC857 SOT363
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BC856BDW1T1, BC857BDW1T1 BC858BDW1T1 OT-363/SC-88 BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC858CDW1T1 BC856 BC858CDW1T1 BC856 BC856BDW1T1 BC857 BC857CDW1T1 BC858 Dual General Purpose Transistors SC88 BC857 SOT363 | |