SOT 23 MARK 2V Search Results

TRANSISTOR A64

Abstract: a64 TRANSISTOR sot23 a64 MMBTA64 MPSA64 PZTA64 darlington sot23 pnp a64 sot
Contextual Info: MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol

MMBTA64

Abstract: MPSA64 PZTA64 AP-61 FAIRCHILD SOT-223 MARK
Contextual Info: MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol

sot 23 mark 2v

Abstract: darlington sot23 pnp
Contextual Info: MMBTA64 PZTA64 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 2V B E C MPSA64 / MMBTA64 / PZTA64 MPSA64 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings*

TRANSISTOR A64

Abstract: FAIRCHILD SOT-223 MARK MMBTA64 MPSA64 PZTA64
Contextual Info: S E M IC O N D U C T O R tm MPSA64 MMBTA64 TO-92 SOT-23 PZTA64 B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Màximum Rdtinys

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BTA64

Abstract: sot 23 mark 2v
Contextual Info: S E M IC O N D U C T O R tm MPSA64 MMBTA64 SOT-23 Mark: 2V PZTA64 B SOT-223 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum RâtinÇjS

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

l5 transistor PNP

Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
Contextual Info: MPSA641 MMBTA641PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high

BCW66G

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 19. 2 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings * TC=25°C unless otherwise noted

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted

BCW66G

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted

Fairchild Semiconductor - Process

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 19. 2 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings * TC=25°C unless otherwise noted

Contextual Info: MPSA05/MMBTA05 MPSA05/MMBTA05 NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 SOT-23 1 Mark: 1H TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector

MMBTA05

Abstract: MPSA05
Contextual Info: MPSA05/MMBTA05 MPSA05/MMBTA05 NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 SOT-23 1 Mark: 1H TO-92 1 1. Emitter 2. Collector 3. Base 1. Base 2. Emitter 3. Collector

On semiconductor date Code

Abstract: MPS A05 transistor transistor A05 Marking code mps A05 SOT MPS A05 MPS sot23-6 top marking A
Contextual Info: MPSA05/MMBTA05 MPSA05/MMBTA05 NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 SOT-23 1 Mark: 1H TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector

MMBTA05

Abstract: MPSA05
Contextual Info: MPSA05/MMBTA05 MPSA05/MMBTA05 NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 SOT-23 1 Mark: 1H TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector

MMBF4119

Abstract: PN4118 MMBF4117 MMBF4118 PN4117 PN4119
Contextual Info: e? S e m i c o n d u c t o r " PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 SOT-23 Mark: 6 1 A /6 1 C /6 1 E N-Channel Switch T h is d e v ic e is d e sig n e d for low current D C an d a u d io app licatio ns. T h e s e d e v ic e s p rovide ex ce lle n t p erform an ce a s input s ta g e s for

690Kx

Abstract: 686D 690Bx 686DX 686J 691Cx G69XX G690 G690H G690L
Contextual Info: Global Mixed-mode Technology Inc. G690/G691 Microprocessor Reset IC Features General Description „Precision Monitoring of +3V, +3.3V, and +5V The G690/G691 are microprocessor µP supervisory circuits used to monitor the power supplies in µP and digital systems. They provide excellent circuit reliability

671DX

Abstract: G671L293T73Uf 670Dx G671L 68HCXX 668Gx G670L263T71 G670 669ax
Contextual Info: G670/G671 Global Mixed-mode Technology Inc. Microprocessor Reset IC Features General Description „ Precision Monitoring of +3V, +3.3V, and +5V Power-Supply Voltages „ Fully Specified Over Temperature Available in Three Output Configurations Push-Pull RESET Output G670L

668I

Contextual Info: G670/G671 Global Mixed-mode Technology Inc. Microprocessor Reset IC Features General Description „Precision Monitoring of +3V, +3.3V, and +5V The G670/G671 are microprocessor µP supervisory circuits used to monitor the power supplies in µP and digital systems. They provide excellent circuit reliability

Contextual Info: G670/G671 Global Mixed-mode Technology Inc. Microprocessor Reset IC Features General Description „ Precision Monitoring of +3V, +3.3V, and +5V Power-Supply Voltages „ Fully Specified Over Temperature Available in Three Output Configurations Push-Pull RESET Output G670L

1GM sot-23 transistor

Contextual Info: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage

AAKW

Abstract: AALN UTP025 UTP015
Contextual Info: 19-1712; Rev 1; 4/00 Dual Trip SOT Temperature Switches The MAX6505–MAX6508 temperature switches have dual logic outputs that assert when the die temperature crosses their trip thresholds. Trip thresholds are factory programmed to convenient temperatures in 5°C increments.

AAKW

Abstract: AAME MARK A5 SOT23-6 MAX6505 MAX6506 MAX6507 MAX6508 MAX6505UTP000 UTP01 5C SOT23-6
Contextual Info: 19-1712; Rev 1; 4/00 Dual Trip SOT Temperature Switches _Applications µP Temperature Monitoring in High-Speed Computers Temperature Control Features ♦ ±0.5°C typ Threshold Accuracy Over Full Temperature Range ♦ No External Components Required