SOT 12W Search Results
SOT 12W Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MKZ30V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 30 V, SOT-23 | Datasheet | ||
| MSZ36V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 36 V, SOT-346 | Datasheet | ||
| MKZ24V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 24 V, SOT-23 | Datasheet | ||
| MSZ30V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 30 V, SOT-346 | Datasheet | ||
| MKZ36V | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 36 V, SOT-23 | Datasheet |
SOT 12W Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Thx201
Abstract: OB2268 OB2262 PA3004 dvd player smps SG6848 SG6841 ld7552 cross reference ob2278 sot-26 pwm controller
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update2007/9/10rs1117rs9173rs9172+16 | |
ASD103Contextual Info: DATE: 9th April, 2014 PCN #: 2140 PCN Title: Leadframe material change for SOT-25, SOT-26 and TSOT25 packages Dear Customer: This is an announcement of change s to products that are currently being |
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ot-25ot-26tsot25zxre160aet5ta+4 | |
sot-23 12w
Abstract: 12w sot-23 AF002C4
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af002c1-39af002c4-390/-12vsot-23 12w+2 | |
transistor marking 12wContextual Info: KSC2883 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SOT-89 • 3W Output Application • Collector Dissipation Pc=1-2W: Mounted on Ceramic Board • Complement to KSA1203 ABSOLUTE MAXIMUM RATINGS TA=25t; Symbol Characteristic Collector-Base Voltage |
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ksc2883ksa1203ot-89transistor marking 12w | |
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Contextual Info: KSA1203 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SOT-89 • 3W Output application • Collector Dissipation Pc“ 1-2W : Mounted on Ceram ic Board • Complement to KSC2883 ABSOLUTE MAXIMUM RATINGS TA=25t: C haracteristic Sym bol Collector Base Voltage |
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ksa1203ksc2883ot-89 | |
NCP1015 D
Abstract: p1015ap pC817 PSpice NCP101X NCP1015B NCP1015AP06 p1015a pc817 receiver power supply application PC817 pspice model NCP1015
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ncp1015ot-223ncp1015/dncp1015 d+8 | |
ac-dc
Abstract: pC817 PSpice p1015ap PC817 pspice model bsc flyback universal footprint for transformer in orcad p1015a universal smps diagrams NCP1015 BAT54
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ncp1015ot-223ncp1015/dac-dc+8 | |
pC817 PSpice
Abstract: p1015ap PC817 pspice model PC817 spice model
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ncp1015ncp1015/dpc817 pspicep1015ap+2 | |
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Contextual Info: RSD221N06FRA Nch 60V 22A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS 60V RDS on (Max.) 26mW ID 22A PD 20W CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit lFeatures (3) 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. |
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rsd221n06fraaec-q101sc-63ot-428+1 | |
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Contextual Info: RSD046P05 Pch 45V 4.5A Power MOSFET Datasheet lOutline VDSS -45V RDS on (Max.) 155mW ID -4.5A PD 15W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit (3) 1) Low on-resistance. *1 2) Fast switching speed. (1) 3) Drive circuits can be simple. *2 |
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rsd046p05155mwsc-63ot-428+1 | |
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Contextual Info: RSD046P05 Datasheet Pch 45V 4.5A Power MOSFET lOutline VDSS -45V RDS on (Max.) 155mW ID -4.5A PD 15W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit (3) 1) Low on-resistance. *1 2) Fast switching speed. (1) 3) Drive circuits can be simple. *2 |
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rsd046p05155mwsc-63ot-428+2 | |
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Contextual Info: RSD201N10FRA Nch 100V 20A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS 100V RDS on (Max.) 46mW ID 20A PD 20W CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit lFeatures (3) 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. |
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rsd201n10fraaec-q101sc-63ot-428+1 | |
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Contextual Info: RSD046P05FRA Pch 45V 4.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS -45V RDS on (Max.) 155mW ID -4.5A PD 15W CPT3 (SC-63) <SOT-428> (2) (1) (3) lInner circuit lFeatures 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source |
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rsd046p05fraaec-q101155mwsc-63+2 | |
DT014LContextual Info: DT014L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 A B D C D D G S P E G Dim Min |
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dt014lot-223ds11603 | |
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RCD041N25Contextual Info: RCD041N25 Nch 250V 4.0A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 1300mW ID 4.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. |
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rcd041n251300mwsc-63ot-428+2 | |
DT456PContextual Info: DT456P P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 A B D C D D G S P E G Dim Min |
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dt456pot-223da11614 | |
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Contextual Info: RCD041N25 Datasheet Nch 250V 4.0A Power MOSFET lOutline VDSS 250V RDS on (Max.) 1300mW ID 4.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. |
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rcd041n251300mwsc-63ot-428+1 | |
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Contextual Info: RSD221N06 Nch 60V 22A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 26mW ID 22A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit (3) 1) Low on-resistance. *1 (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. |
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rsd221n06sc-63ot-428r1120a | |
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Contextual Info: RSD201N10 Nch 100V 20A Power MOSFET Datasheet lOutline VDSS 100V RDS on (Max.) 46mW ID 20A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit (3) 1) Low on-resistance. *1 (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. |
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rsd201n10sc-63ot-428r1120a | |
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Contextual Info: RSD221N06 Nch 60V 22A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 26mW ID 22A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit (3) 1) Low on-resistance. *1 (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. |
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rsd221n06sc-63ot-428r1120a | |
DT456PContextual Info: DT456P P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 A B D C D D G E S P G R H J |
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dt456pot-223ds11614 | |
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Contextual Info: RND030N20 Nch 200V 3.0A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 870mW ID 3.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit (3) 1) Low on-resistance. *1 (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. |
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rnd030n20870mwsc-63ot-428+1 | |
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Contextual Info: RCD041N25 RCD041N25 Datasheet Nch 250V 4.0A Power MOSFET lOutline VDSS 250V RDS on (Max.) 1300mW ID 4.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. |
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rcd041n251300mwsc-63ot-428+1 | |
n03nContextual Info: RND030N20 Datasheet Nch 200V 3.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 870mW ID 3.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit (3) 1) Low on-resistance. *1 (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. |
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rnd030n20870mwsc-63ot-428+3 | |