SONY HIGH SPEED BICMOS SYNCHRONOUS STATIC RAM Search Results

cxk77b3611

Abstract: KJE 6A
Contextual Info: SONY CXK77B3611 32,768-WORD by 36-BIT HIGH SPEED BiCMOS SYNCHRONOUS STATIC RAM -5/6/7 Advanced Information Description The CXK77B3611 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 32,768-words by 36-bits. This synchronous SRAM integrates input registers, high speed SRAM, output registers/latches and write buffers onto

Contextual Info: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

Contextual Info: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

octal tri state buffer ic

Abstract: sony SA10 SA11 SA12 SA14 SA17 CXK77B1840GB
Contextual Info: SONY CXK77B1840GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

octal tri state buffer ic

Abstract: CXK77B3641GB SA10 SA11 SA12 SA13 SA14 SA15 SA16 CXK77B3641GB-45
Contextual Info: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

octal tri state buffer ic

Abstract: sony SA10 SA11 SA12 SA13 SA14 SA15 SA17 CXK77B1841GB
Contextual Info: SONY CXK77B1841GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1841 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

CXK77B1840GB

Abstract: SA12 SA13 SA14 SA15 SA17
Contextual Info: CXK77B1840GB SONY 4A/45A 4Mb Late Write HSTL High Speed Synchronous SRAM (256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

CXK77B1841GB

Abstract: SA12 SA13 SA14 SA15 SA16 SA17
Contextual Info: SONY CXK77B1841GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1841 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

Contextual Info: SONY CXK77B1840GB 4A/45A 4Mb Late Write HSTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

Contextual Info: SONY CXK77B1840GB 4A/45A 4Mb Late Write HSTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

Contextual Info: SONY CXK77B1840GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

CXK77B3640GB

Abstract: SA12 SA13 SA14 SA15 SA16
Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

CXK77B3641GB

Abstract: SA12 SA13 SA14 SA15 SA16
Contextual Info: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM , output registers/latches, and a one-deep write

octal tri state buffer ic

Abstract: sony CXK77B3640GB SA10 SA11 SA12 SA14 SA16
Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

Contextual Info: SONY -6/7 CXK77B1810 6 5 ,5 3 6 -w o r d by 18- b it h i g h s p e e d BiCMOS s y n c h r o n o u s s t a t i c r a m Advanced Information Description The CXK77B1810 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 65,536-words by 18-bits. This synchronous SRAM integrates input registers,

3B-36

Abstract: 77B18
Contextual Info: SONY CXK77B1810 6 5 ,5 3 6 - w o r d by 1 8 - b it h i g h s p e e d BiCMOS s y n c h r o n o u s s t a t i c r a m -5/6/7 Advanced Information Description The CX K 77B1810 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 65,536-words by

Contextual Info: SONY I CXK77B3611AGB » High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a

Contextual Info: SONY CXK77B3611AGB“ High Speed Bi-CMOS Synchronous Static RAM Preliminary Description 119 pin BGA Plastic The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a

Contextual Info: SONY CXK77B3611AGB* High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B3611AGB-5/6 is a high speed 1M bit 119 pin BGA Plastic Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a

Contextual Info: SONY High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B181OAGB-5/6 is a high speed 1M bit 119 pin BGA Plastic Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a

Contextual Info: SONY C X K 7 7 B 1 8 High Speed Bi-CMOS Synchronous Static RAM 1 A G B s * Preliminary Description The CXK77B181OAGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a

Contextual Info: CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a

CXK77B3611AGB

Abstract: CXK77B3611AGB-5
Contextual Info: CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input