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    SOLDERING RECOMMENDATIONS FOR LDMOS POWER AMPLIFIERS 1 Search Results

    SOLDERING RECOMMENDATIONS FOR LDMOS POWER AMPLIFIERS 1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM759H/B
    Rochester Electronics LLC LM759 - Power Operational Amplifier PDF Buy
    LM759CH
    Rochester Electronics LLC LM759 - Power Operational Amplifier, MBCY8 PDF Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    HA2-2541-2
    Rochester Electronics LLC HA2-2541 - Operational Amplifier PDF Buy
    LM1536J/883
    Rochester Electronics LLC LM1536 - Operational Amplifier - Dual marked (7800304PA) PDF Buy

    SOLDERING RECOMMENDATIONS FOR LDMOS POWER AMPLIFIERS 1 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Soldering recommendations for Ldmos Power Amplifiers (1)
    NXP Semiconductors Soldering recommendations for Ldmos Power Amplifiers (1) Original PDF 480.53KB 13

    SOLDERING RECOMMENDATIONS FOR LDMOS POWER AMPLIFIERS 1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Solder mounting recommendations for Ldmos Power Amplifiers Author: Josselin FAY, Michael ASIS, Jose SALTA Doc. Nr. Date: 2008/02/14 General solder mounting recommendations


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    circuit diagram SMD Rework Station

    Abstract: 850 SMD Rework Station SLD1026Z 2 watt fet smd transistor w J 3 58
    Contextual Info: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


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    SLD-1026Z SLD-1026Z 2700MHz. ProprWSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V circuit diagram SMD Rework Station 850 SMD Rework Station SLD1026Z 2 watt fet smd transistor w J 3 58 PDF

    circuit diagram SMD Rework Station

    Abstract: Soldering recommendations for Ldmos Power Amplifiers 1 SOT23 DXF SMD TRANSISTOR R90
    Contextual Info: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


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    SLD-1026Z SLD-1026Z 2700MHz. ProprWSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V circuit diagram SMD Rework Station Soldering recommendations for Ldmos Power Amplifiers 1 SOT23 DXF SMD TRANSISTOR R90 PDF

    600S2R7BT250XT

    Abstract: ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85
    Contextual Info: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


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    SLD-1026Z SLD-1026Z 2700MHz. SOF-26 AN-090, EDS-104157 600S2R7BT250XT ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85 PDF

    XD010-22S-D2FY

    Abstract: GSM repeater circuit Rogers 4350 datasheet XD010-22S-D2F AN060
    Contextual Info: XD010-22S-D2F XD010-22S-D2FY Product Description Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors


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    XD010-22S-D2F XD010-22S-D2FY XD010-22S-D2F XD010-EVAL) EDS-102930 AN-060 XD010-22S-D2FY GSM repeater circuit Rogers 4350 datasheet AN060 PDF

    XD010-24S-D2FY

    Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
    Contextual Info: XD010-24S-D2F XD010-24S-D2FY Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s


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    XD010-24S-D2F XD010-24S-D2FY XD010-24S-D2F XD010-EVAL) EDS-102932 AN-060 XD010-24S-D2FY Rogers 4350 datasheet AN060 PDF

    Contextual Info: XD010-24S-D2F XD010-24S-D2FY Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s


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    XD010-24S-D2F XD010-24S-D2FY XD010-EVAL) EDS-102932 AN-060 PDF

    GSM repeater circuit

    Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
    Contextual Info: XD010-24S-D2F 1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s


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    XD010-24S-D2F XD010-24S-D2F XD010-EVAL) EDS-102932 AN-060 GSM repeater circuit Rogers 4350 datasheet AN060 PDF

    Contextual Info: XD010-12S-D4F XD010-12S-D4FY Product Description Sirenza Microdevices’ XD010-12S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of cellular base station power amplifiers. The power transistors are fabricated using


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    XD010-12S-D4F XD010-12S-D4FY XD010-EVAL) EDS-102934 AN-060 PDF

    200 watt schematics power amp

    Abstract: 80021 GSM repeater circuit Rogers 4350 datasheet XD010-12S-D4F AN060
    Contextual Info: XD010-12S-D4F Product Description Sirenza Microdevices’ XD010-12S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of cellular base station power amplifiers. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune,


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    XD010-12S-D4F XD010-12S-D4F XD010-EVAL) EDS-102934 AN-060 200 watt schematics power amp 80021 GSM repeater circuit Rogers 4350 datasheet AN060 PDF

    thermal compound wps II

    Abstract: thermal compound wps philips resistor 2322-195 austerlitz heatsink catalogue transistor 6 pin SMD Z2 transistor SMD Z2 BGF1901-10 GSM1900 SR200
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of


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    M3D737 BGF1901-10 GSM1900 OT365C SCA76 R02/02/pp11 thermal compound wps II thermal compound wps philips resistor 2322-195 austerlitz heatsink catalogue transistor 6 pin SMD Z2 transistor SMD Z2 BGF1901-10 SR200 PDF

    Contextual Info: Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit


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    XD010-42S-D4F XD010-42S-D4FY XD010-EVAL) EDS-102938 AN-060 PDF

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


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    transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide PDF

    BGF901-20

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF901-20 GSM900 EDGE power module Product specification 2003 Jun 13 Philips Semiconductors Product specification GSM900 EDGE power module BGF901-20 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of


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    M3D737 BGF901-20 GSM900 SCA75 613524/01/pp12 PDF

    thermal compound wps II

    Abstract: BGF944 GSM900 SR200 SR400 RO5880 MBL813 gp 940
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of


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    M3D737 BGF944 GSM900 OT365C SCA75 613524/07/pp12 thermal compound wps II BGF944 SR200 SR400 RO5880 MBL813 gp 940 PDF

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


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    DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index PDF

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


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    DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901 PDF

    fetal monitor device circuit diagrams

    Abstract: doppler heart fetal block diagram FETAL HEART RATE MONITOR spo2 circuit algorithm fetal doppler sensors i.mx53 pulse oximetry sensor circuit fetal heart doppler circuit diagram of blood glucose meter microcontroller digital blood pressure circuit di
    Contextual Info: Medical Applications User Guide freescale.com/medical Table of Contents Introduction 1.1 Freescale Offers Technology for Life . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.2 Welcome to Freescale Medical Solutions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    MDAPPUSGDRM118 fetal monitor device circuit diagrams doppler heart fetal block diagram FETAL HEART RATE MONITOR spo2 circuit algorithm fetal doppler sensors i.mx53 pulse oximetry sensor circuit fetal heart doppler circuit diagram of blood glucose meter microcontroller digital blood pressure circuit di PDF

    MCP4716

    Abstract: MCP4706 MCP47A1 Potentiometers sot 23-6 Marking Code MCP4726 DS25118 a6 marking code sot LT 5210 mcp470 UM10204
    Contextual Info: MCP47A1 6-Bit Volatile DAC with Command Code • 6-Bit DAC - 65 Taps: 64 Resistors with Taps to Full-Scale and Zero-Scale Wiper Code 00h to 40h • VREF Pull-down Resistance: 20 k (typical) • VOUT Voltage Range - VSS to VREF • I2C Protocol - Supports SMBus 2.0 Write Byte/Word


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    MCP47A1 SC70-6 Pb-fr6-3-5778-366 DS25154A-page MCP4716 MCP4706 MCP47A1 Potentiometers sot 23-6 Marking Code MCP4726 DS25118 a6 marking code sot LT 5210 mcp470 UM10204 PDF

    marking codes transistors wk sot-23

    Abstract: sot23-6 marking code 52H marking codes n1 transistors sot-23 LT 228
    Contextual Info: MCP47DA1 6-Bit Windowed Volatile DAC with Command Code Package Types Features: MCP47DA1 • 6-Bit DAC: - 65 Taps: 64 Resistors with Taps to Full Scale and Zero Scale Wiper Code 00h to 40h - 7-bit Serial Data (00h to 7Fh, 00h - 20h = Zero Scale and 60h-7Fh = Full Scale)


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    MCP47DA1 60h-7Fh Ope778-366 DS25118D-page marking codes transistors wk sot-23 sot23-6 marking code 52H marking codes n1 transistors sot-23 LT 228 PDF

    intel 845 MOTHERBOARD pcb CIRCUIT diagram

    Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
    Contextual Info: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


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    DL128/D Mar-2002 r14525 DL128 intel 845 MOTHERBOARD pcb CIRCUIT diagram 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a PDF