SOIC-8 MOSFET Search Results

Contextual Info: NTMS3P03R2 Power MOSFET -3.05 Amps, -30 Volts P-Channel SOIC-8 http://onsemi.com Features •ăHigh Efficiency Components in a Single SOIC-8 Package •ăHigh Density Power MOSFET with Low RDS on •ăMiniature SOIC-8 Surface Mount Package - Saves Board Space

E3P03

Abstract: NTMS3P03R2 NTMS3P03R2G
Contextual Info: NTMS3P03R2 Power MOSFET -3.05 Amps, -30 Volts P-Channel SOIC-8 http://onsemi.com Features •ăHigh Efficiency Components in a Single SOIC-8 Package •ăHigh Density Power MOSFET with Low RDS on •ăMiniature SOIC-8 Surface Mount Package - Saves Board Space

ir2110

Abstract: ir2110 application AN IR2110 IR2112 IR2112-2 IR2110-2 IR4427 IC IR2110S IR2186S IR3220S
Contextual Info: International Rectifier Automotive IC Navigator MOSFET GATE DRIVERS 8 Lead SOIC Narrow Body 14 Lead SOIC Narrow Body 16 Lead SOIC Wide Body Features Voltage Offset 8 Lead DIP Dual Low Side b a si c n/a IR4426 IR4427 IR4428 IR4426S IR4427S IR4428S High Side

4701N

Abstract: NTMFS4701N NTMFS4701NT1G NTMFS4701NT3G
Contextual Info: NTMFS4701N Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package Features •ăThermally and Electrically Enhanced Packaging Compatible with Standard SOIC-8 http://onsemi.com •ăNew Package Provides Capability of Inspection and Probe After

Contextual Info: NTMD4820N Power MOSFET 30 V, 8 A, Dual N-Channel, SOIC-8 Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăDual SOIC-8 Surface Mount Package Saves Board Space

PB CWDM305P

Abstract: CWDM305P marking code 8 lead soic package CWDM305N
Contextual Info: Product Brief CWDM305N Single, 5.8A N-Channel CWDM305P (Single, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) CWDM305PD (Dual, 5.3A P-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305N, CWDM305P, CWDM305ND,

MOSFET SMD MARKING CODE

Abstract: SOIC8 package CWDM305P
Contextual Info: Product Brief CWDM305P 30V, 5.3A P-Channel MOSFET in the SOIC-8 package SOIC-8 Typical Electrical Characteristics Central Semiconductor’s CWDM305P is a high current P-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This

Contextual Info: Product Brief CWDM305P Single, 5.3A P-Channel CWDM305PD (Dual, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305P (Single, 5.3A P-Channel), CWDM305PD (Dual, 5.3A P-Channel), and CWDM305ND (Dual,

4840N

Abstract: NTMD4840NR2G NTMD4840 NTMD4840N
Contextual Info: NTMD4840N Power MOSFET 30 V, 7.5 A, Dual N-Channel, SOIC-8 Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăDual SOIC-8 Surface Mount Package Saves Board Space

4707n

Abstract: 4707n mosfet NTMFS4707NT3G NTMFS4707N NTMFS4707NT1G
Contextual Info: NTMFS4707N Power MOSFET 30 V, 17 A, Single N-Channel, SOIC-8 Flat Lead Features •ăFast Switching Times •ăLow Gate Charge •ăLow RDS on •ăLow Inductance SOIC-8 Package •ăThese are Pb-Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ 10 mW @ 10 V

4708N

Abstract: NTMFS4708N NTMFS4708NT1G NTMFS4708NT3G
Contextual Info: NTMFS4708N Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL Features •ăFast Switching Times •ăLow Gate Charge •ăLow RDS on •ăLow Inductance SOIC-8 Package •ăThese are Pb-Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ Applications •ăNotebooks, Graphics Cards

A8499

Abstract: A8499SLJTR-T B340 circuit diagram regulator
Contextual Info: A8499 High Voltage Step-Down Regulator Package LJ, 8-pin SOIC with exposed thermal pad The A8499 is a step down regulator that will handle a wide input operating voltage range. The A8499 is supplied in a low-profile 8-lead SOIC with exposed pad package LJ .

4800N

Abstract: NTMS4800NR2G NTMS4800N
Contextual Info: NTMS4800N Power MOSFET 30 V, 8 A, N−Channel, SOIC−8 Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space

Contextual Info: NTMS4800N Power MOSFET 30 V, 8 A, N−Channel, SOIC−8 Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space

NTMS4800NR2G

Abstract: 4800N
Contextual Info: NTMS4800N Power MOSFET 30 V, 8 A, N−Channel, SOIC−8 Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space

CPC2017N

Abstract: EN50130-4 J-STD-033 K027
Contextual Info: CPC2017N 8-Pin Dual SOIC OptoMOS Relay Parameter Blocking Voltage Load Current Max On-resistance LED Current to operate Rating 60 120 16 1 Description Units VP mA Ω mA Features • Designed for use in security systems complying with EN50130-4 • Small 8-Pin SOIC Package

4820N

Abstract: NTMD4820N NTMD4820NR2G
Contextual Info: NTMD4820N Power MOSFET 30 V, 8 A, Dual N−Channel, SOIC−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC−8 Surface Mount Package Saves Board Space

4820N

Abstract: NTMD4820N NTMD4820NR2G
Contextual Info: NTMD4820N Power MOSFET 30 V, 8 A, Dual N−Channel, SOIC−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC−8 Surface Mount Package Saves Board Space

Contextual Info: NTMD4820N Power MOSFET 30 V, 8 A, Dual N−Channel, SOIC−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC−8 Surface Mount Package Saves Board Space

BRIDGE 2109

Abstract: IR2108 IR21084 IR21084S IR2108S MS-012AA MS-012AB
Contextual Info: Data Sheet No. PD60161-N IR2108 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Packages Fully operational to +600V 14-Lead SOIC Tolerant to negative transient voltage 8-Lead SOIC

Contextual Info: inc. HT0440 Preliminary High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description □ ±400V input to output isolation □ ±700V isolation between outputs

IR21084

Abstract: IR21084S IR2108 IR2108S MS-012AA MS-012AB mosfet te 2304
Contextual Info: Data Sheet No. PD60161-P IR2108 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Packages Fully operational to +600V 14-Lead SOIC Tolerant to negative transient voltage 8-Lead SOIC IR21084S IR2108S dV/dt immune • Gate drive supply range from 10 to 20V

IR2108

Abstract: IR21084 IRFBC30 IRFPE50 IR21084S IR2108S IRFBC20 IRFBC40
Contextual Info: Data Sheet No. PD60161-Q IR2108 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Packages Fully operational to +600V 14-Lead SOIC Tolerant to negative transient voltage 8-Lead SOIC IR21084S IR2108S dV/dt immune • Gate drive supply range from 10 to 20V

IR2108

Abstract: IR21084 mosfet te 2304 IR21084S IR2108S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60161-R
Contextual Info: Data Sheet No. PD60161-R IR2108 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC • Gate drive supply range from 10 to 20V