SOI RF SWITCH Search Results

"RF Switch"

Abstract: 20 qfn 3x3 RF SWITCH RF Switches QFN 4X4 P6102 AT4510 Honeywell OR SenSym rf 4*4 mm QFN Digital Attenuator
Contextual Info: 0275-000.qxp 5/15/07 12:29 PM Page 1 RF / Microwave Services HIGH PERFORMANCE SOI RF SWITCHES AND DIGITAL ATTENUATORS Short-Form Product Catalog 0275-000.qxp 5/15/07 12:29 PM Page 2 RF / Microwave Services Short-Form Product Catalog High Performance SOI CMOS RF Switches and Digital Attenuators

Modeling of SOI FET for RF Switch Applications

Contextual Info: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is

PE42480

Contextual Info: 2014-2015 High-Performance Analog Product Catalog Welcome to Peregrine Semiconductor Peregrine Semiconductor NASDAQ: PSMI , founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding

rf mems switch spst

Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Contextual Info: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.

Contextual Info: Product Specification PE42650A SP3T High Power UltraCMOS RF Switch 30 MHz - 1000 MHz Product Description ig de s The PE42650A is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

Contextual Info: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

EM4222

Abstract: soi switches 2003 Linear SOI switch body RF 2003 tinella RF low power hearing aids car Speed Sensor using RFID UHF RFID passive tag CMOS microwave distance sensors silicon on insulator FDSOI TECHNOLOGY
Contextual Info: OCTOBER 2003 RFDESIGN RF AND MICROWAVE TECHNOLOGY FOR DESIGN ENGINEERS Why all the buzz about SOI? Silicon-on-insulator technology offers solutions to the higher-performance and lower-power dilemma Digital Systems: New two-antenna handset technology improves CDMA

Contextual Info: Product Specification PE4309 50 RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

BP050-0024UJ03

Abstract: F923 PE4309 acg-6
Contextual Info: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

PE4309

Abstract: BP050-0024UJ03
Contextual Info: Preliminary Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

BP050-0024UJ03

Abstract: 20 pins qfn 4x4 footprint
Contextual Info: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

Optimized CMOS-SOI Process for High Performance RF Switches

Contextual Info: Optimized CMOS-SOI Process for High Performance RF Switches A. B. Joshi, S. Lee, Y. Y. Chen, and T. Y. Lee Skyworks Solutions, Inc., Irvine, CA Email: aniruddha.joshi@ieee.org ABSTRACT In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in

Contextual Info: Product Specification PE4305 50 Ω RF Digital Attenuator 5-bit, 15.5 dB, DC – 4.0 GHz Product Description de s ig The PE4305 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance

JESD22-A10

Abstract: JESD22-A11 JESD22A110 22-B102
Contextual Info: RF F1633 Qualifica Q ation Rep port P Page 1 of 1 1633-PQ Q030[1], R Revision B Product Descriptio on Diffeerential DP3T SOI Switch Packa age Type Wiree-bonded QFN N, 2 x 2 x 0.5 m mm Proc cess Technollogy SOI Qualiffication # 11‐QU UAL‐1588

Contextual Info: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of

Contextual Info: HWS554 SOI 0.5-3.0 GHz SP4T Switch May 2015 V2 Features Functional Block Diagram • Low Insertion Loss: 0.5 dB @ 2.7 GHz • High Isolation: 30 dB @ 2.7 GHz RF1 • Low control voltage: 1.3 to 3.0 V • No external DC blocking capacitors required RF2 RF3

Contextual Info: HWS556 SOI 0.5-3.0 GHz SP6T Switch March 2015 V1 Features Functional Block Diagram • Low Insertion Loss: 0.55 dB @ 2.7 GHz • High Isolation: 27 dB @ 2.7 GHz RF1 • Low control voltage: 1.3 to 3.0 V • No external DC blocking capacitors required RF2 RF3

RF Switches Guide Signals In Smart Phones

Contextual Info: RF Switches Guide Signals In Smart Phones The myriad of different bands, modes, radios, and functionality found in a modern smart phone calls for the increased use of simple, high-performance RF switches as well as integrated switch modules. Kevin Walsh | September 2010

Contextual Info: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.

Contextual Info: SPDT High Power SOI Antenna Switch CXA4011GC Description The CXA4011GC is a SPDT antenna switch for GSM/3G/LTE switching applications. The CXA4011GC has a 1.8V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.

Contextual Info: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.

Choosing the Right RF Switches for Smart Mobile Device Applications

Contextual Info: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than

RF3A

Contextual Info: Dual-SP4T SP4Tx2 SOI Antenna Switch CXA4410GC Description The CXA4410 is Rx power SP4Tx2 antenna switch for balanced signal switching application. The CXA4410 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.

Contextual Info: SPDT High Power SOI Antenna Switch CXA4011GC Description The CXA4011GC is a SPDT antenna switch for GSM/3G/LTE switching applications. The CXA4011GC has a 1.8V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.