SO8 FOOTPRINT Search Results

LPC2000

Abstract: LPC908 P89LPC908 measurement of power using 8051 microcontroller schematic usb flash
Contextual Info: DB-SO8-LPC908 USB-Dongle and Derivative Boards The DB-SO8-LPC908 is the Derivative Board for the P89LPC908 microcontroller in an 8 pin SO package. The DB-SO8-LPC908 requires the use of the USB-Dongle for power and a programming interface. The USB-Dongle and DB-SO8-LPC908 allow quick and easy ICP

LPC2000

Abstract: LPC908 P89LPC908 622-1015-ND
Contextual Info: DB-SO8-LPC908 USB-Dongle and Derivative Boards The DB-SO8-LPC908 is the Derivative Board for the P89LPC908 microcontroller in an 8 pin SO package. The DB-SO8-LPC908 requires the use of the USB-Dongle for power and a programming interface. The USB-Dongle and DB-SO8-LPC908 allow quick and easy ICP

Contextual Info: STEVAL-CCA036V1 Demonstration board for single channel op-amp in SO8 package Data brief Description The STEVAL-CCA036V1 demonstration board is designed to help characterize single operational amplifiers in SO8 packages. With this board, the most common op-amp based

Contextual Info: NXP transistors in LFPAK56 – the true power package for smart efficiency Full power in half the footprint First bipolar transistors in LFPAK/Power-SO8 These high-power bipolar transistors, housed in LFPAK56 Power-SO8 packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable,

VFQFPN8* footprint

Abstract: so8 pcb pattern VFQFPN8 MLP8 FOOTPRINT mlp8 land pattern VFQFPN land pattern M25PXX SO8 NARROW so8 footprint AN1579
Contextual Info: AN1579 APPLICATION NOTE Compatibility between the SO8 Package and the MLP Package for the M25Pxx in Your Application CONTENTS • FITTING MORE IN THE SAME AREA – Cross sections of the MLP and SO8 ■ ■ The new MicroLeadframe Package MLP is the ideal solution

npn transistor footprint

Abstract: PBLS2002D PBLS4003V PBLS2003D S 170 MOSFET TRANSISTOR PBLS4003D PBLS1503V PBSS2515YPN PBSS3515VS PBLS2003S
Contextual Info: Double low VCEsat BISS transistors in SO8 2.7 A double low VCEsat (BISS) transistors to reduce board space NXP Semiconductors‘ latest double Breakthrough In Small-Signal (BISS) transistors, housed in the industry standard package SO8, deliver performance and board space benefits to a variety of

so8 footprint

Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Contextual Info: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon

SOT1023

Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
Contextual Info: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in

91/157/AET

Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8

ufdfpn8 footprint

Abstract: dfn8 tray ufdfpn8 ufdfpn8 thermal resistance 91/157/AET
Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8

PHM21NQ15T

Contextual Info: PHM21NQ15T TrenchMOS standard level FET Rev. 02 — 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • SOT96 SO8 footprint compatible

Contextual Info: Wave soldering footprint Footprint information for wave soldering of SO8 package SOT96-1 1.20 2x enlarged solder land 0.3 (2×) 0.60 (6×) 1.30 4.00 6.60 7.00 1.27 (6×) 5.50 preferred transport direction during soldering solder land solder resist occupied area

LM2903

Abstract: STMicroelectronics st+2903Y
Contextual Info: LM2903 Low-power dual voltage comparator Datasheet - production data • TTL, DTL, ECL, MOS, CMOS compatible outputs • Automotive qualification N DIP8 plastic package D SO8 (plastic micropackage) Related products • See LM2903W for similar device with higher

Contextual Info: Features and Benefits Integrated transmitter-receiver for 120kHz ASK transponders tags Unique Parallel Antenna concept for maximum power efficiency. No external quartz reference required. No zero modulation problems. SO8 package and high level of integration for compact reader design

transistor BP 109

Abstract: Si4420DY
Contextual Info: Si4420DY N-channel enhancement mode field-effect transistor Rev. 01 — 28 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4420DY in SOT96-1 SO8 .

MS-012AA

Abstract: Si4410DY
Contextual Info: Si4410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 .

Si4416DY

Abstract: SOT96- 1
Contextual Info: Si4416DY N-channel enhancement mode field-effect transistor Rev. 01 — 05 June 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4416DY in SOT96-1 SO8 .

Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

Contextual Info: Si4410DY N-channel enhancement mode field-effect transistor Rev. 01 — 20 Feb 2001 M3D315 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 .

MS-012AA

Abstract: PHK12NQ03LT
Contextual Info: PHK12NQ03LT TrenchMOS logic level FET Rev. 01 — 22 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1technology. Product availability: PHK12NQ03LT in SOT96-1 SO8 .

Si9410DY

Contextual Info: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .

Contextual Info: Si9410DY N-channel enhancement mode field-effect transistor Rev. 01 — 15 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .

ITF86182SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

03ac29

Abstract: HZG336 MS-012AA PHN103T
Contextual Info: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .