SO-8 731 Search Results

Si4430BDY

Abstract: Si4430BDY-T1-E3
Contextual Info: New Product Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS COMPLIANT 24 SO-8 D S 1 8

SI4401BDY-T1-E3

Abstract: Si4401BDY 73140
Contextual Info: Si4401BDY New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −40 rDS(on) (W) ID (A) 0.014 @ VGS = −10 V −10.5 0.021 @ VGS = −4.5 V −8.7 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 40 S SO-8 S 1 8 D S

TA 7312

Abstract: APM7312 J-STD-020A GS 069
Contextual Info: APM7312 Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =35mΩ(typ.) @ VGS=10V SO-8 RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • • • S1 1 8 D1 Super High Dense Cell Design for Extremely G1 2

Si4430BDY

Abstract: Si4430BDY-T1-E3
Contextual Info: Si4430BDY Vishay Siliconix New Product N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ) • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS 24 COMPLIANT SO-8 D S 1 8 D

FT1034BMH-1

Contextual Info: FT1034-1.2/FT1034-2.5 LT1034-1.2/LT1034-2.5 Micropower Dual Reference Micropower Dual Reference Description U Features • ■ ■ ■ ■ Guaranteed 20 ppm/°C Drift Guaranteed 40 ppm/°C Drift SO-8 Package 20µA to 20mA Operation (1.2V) Dynamic Impedance: 1Ω

SI4430BDY-E3

Abstract: S3550 SI4430BDY-T1-E3 Si4430BDY
Contextual Info: Si4430BDY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.006 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFETS D 100% Rg Tested Qg (Typ) 24 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D

Si7856ADP-T1

Contextual Info: Si7856ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0037 @ VGS = 10 V 25 0.0048 @ VGS = 4.5 V 23 Qg (Typ) 39 PowerPAK SO-8 RoHS* COMPLIANT • DC/DC Converters • Synchronous Rectifiers

Si7336ADP

Abstract: Si7336ADP-T1-E3 Si7336ADP-T1-GE3 Si7336ADP-T1
Contextual Info: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server

Contextual Info: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

Si7858ADP

Abstract: Si7858ADP-T1-E3 Si7858ADP-T1-GE3 S-80440-Rev
Contextual Info: Si7858ADP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.0026 at VGS = 4.5 V 29 0.0037 at VGS = 2.5 V 23 Qg (Typ.) 54 PowerPAK SO-8 • New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile

Si7858ADP

Abstract: Si7858ADP-T1-E3 Si7858ADP-T1-GE3
Contextual Info: Si7858ADP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.0026 at VGS = 4.5 V 29 0.0037 at VGS = 2.5 V 23 Qg (Typ.) 54 PowerPAK SO-8 • New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile

Contextual Info: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate

max761 Pin-for-Pin Compatible

Abstract: 741d MAX850-853 741u AX771 AX772 741n
Contextual Info: DC-DC CONVERTERS | I_ LOW-DROPOUT LINEAR REGULATORS - ] POSITIVE | STEP-UP t MAXMI3 5 V or adj., Io = 15|iA , 320m V dropout at 500m A , 1.6W 8 -pin SO ☆ M A X 741U (step-up controller) ☆ M A X 732 (12V . flash prog.) ☆ M A X 751 (2V in to 5VoUT)

Contextual Info: Si7439DP Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () ID (A) 0.090 at VGS = - 10 V - 5.2 0.095 at VGS = - 6 V - 5.0 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si7894ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 25 0.0045 at VGS = 4.5 V 23 Qg (Typ.) 58 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: MX5 SERIES AUTOMOTIVE CONNECTORS 040/070 Crimp Contacts, PCB-to-Cable Applications GENERAL SPECIFICATIONS N u m b e r of C o n ta c ts Pin: 4 2 ,4 8 ,5 4 ,6 4 ,7 6 So c k e t: 12,16,22 ,26 C o n ta ct S p a c in g S ign al: 3.0mm .118“ Pow er: 3.5mm (.138")

AM29F200

Contextual Info: FIN A L Am29F200T/Am29F200B Adva^ 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS S.O Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ Compatible with JEDEC-standards ■ — P in o u t a n d so ftw a re c o m p a tib le w ith

Contextual Info: TYPES TF4028A, T P4028A CM OS BCD T O -D E C IM A l DECODERS LOGIC CIRCU ITS S E P T E M B E R 5976 JO R N D U A L IN-LIN E P A C K A G E TO P VIEW Designed to be Interchangeable with RCA CD4028A Y 00 >3 V1 SI a S3 so V8 J-L LL O I 2 J 4 & 6 7 8 9 specifications

TIS84

Abstract: PFL200
Contextual Info: TYPES TIS84, TIS108 N-P-N SILICON TRANSISTORS B U L L E T iN NO . D L -S 731 1254, A U G U S T 1 9 6 9 - R E V IS E D M ARC H 1973 HIGH-FREQUENCY SILECTt TRANSISTORS! FOR TV TUNER AND IF APPLICATIONS Featuring Low-Feedback Capacitance and Forward-AGC Characteristics

731 opto

Contextual Info: TOSHIBA -CDISCRETE/OPTO> 9097250 TOSHIBA ¿Toihilli TT DE I T C H 7 2 5 G 001t,731 fc, |~~ 99 0 <DI S C R E T E / O P T O SEMICONDUCTOR T O SH IB A F IE L D E F F E C T T R A N SIST O R 2 S TECHNICAL DATA S IL IC O N 16731 K 6 4 4 N CHANNEL HOS T Y PE I-M O S 1 )

Contextual Info: =53402713 000BÔ4b 731 M115-8 Series Programmable Master Clock Oscillators The M l 15-8 is a member of the M l 15 series of high-performance, digitallyprogrammed master clock oscillators with frequencies ranging from 60MHz to 1GHz. The M l 15 series is a cost-effective

IRFS730

Abstract: 731 MOSFET 250M IRFS731 L17M
Contextual Info: N-CHANNEL POWER MOSFETS IRFS730/731 FEATURES • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

TIS84

Contextual Info: TYPES T1S84 TIS108 N-P-N SILICON TRANSISTORS BU LL ET IN NO. DL-S 7311254, AUGU ST 1 9 6 9 -R E V IS E D M AR C H 1973 HIGH-FREQUENCY SIlECTt TRANSISTOR» FOR TV TUNER AND IF APPLICATIONS Featuring Low-Feedback Capacitance and Forward-AGC Characteristics • TIS84 for Tuner RF Amplifiers