SO-8 731 Search Results

APM7313

Abstract: MOSFET APM7313 J-STD-020A 7313 28 pin 7313
Contextual Info: APM7313 Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/6A , RDS ON =21mΩ(typ.) @ VGS=10V SO-8 RDS(ON)=27mΩ(typ.) @ VGS=4.5V • S1 1 8 D1 G1 2 7 D1 Reliable and Rugged S2 3 6 D2 SO-8 Package G2 4 5 D2 Super High Dense Cell Design for Extremely

td 2003 ap

Abstract: APM7318 J-STD-020A Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 M7-318
Contextual Info: APM7318 Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/8A , RDS ON =15mΩ(typ.) @ VGS=4.5V SO-8 RDS(ON)=30mΩ(typ.) @ VGS=2.5V • S1 1 8 D1 G1 2 7 D1 Reliable and Rugged S2 3 6 D2 SO-8 Package G2 4 5 D2 Super High Dense Cell Design for Extremely

Contextual Info: plugs dimensions P. Max. Shall Size 8 Thread MM Inch * - 78 58? T Max. Bayonet Inch 706 MM inch 1? 9 8 766 J S M a i. MM In ch * .015IMM -.33 10 4 b 4 •HO Inch MM ’ H jr •lb b? ' tv:.’ i r J p ;,. in , ' tih,' 3. :* 1 b.’ *4' s:» SO 10 731 18 6 7

Si4430BDY

Abstract: Si4430BDY-T1-E3
Contextual Info: New Product Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS COMPLIANT 24 SO-8 D S 1 8

SI4401BDY-T1-E3

Abstract: Si4401BDY 73140
Contextual Info: Si4401BDY New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −40 rDS(on) (W) ID (A) 0.014 @ VGS = −10 V −10.5 0.021 @ VGS = −4.5 V −8.7 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 40 S SO-8 S 1 8 D S

Contextual Info: New Product Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS COMPLIANT 24 SO-8 D S 1 8

Contextual Info: Si4401BDY New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −40 rDS(on) (W) ID (A) 0.014 @ VGS = −10 V −10.5 0.021 @ VGS = −4.5 V −8.7 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 40 S SO-8 S 1 8 D S

TA 7312

Abstract: APM7312 J-STD-020A GS 069
Contextual Info: APM7312 Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =35mΩ(typ.) @ VGS=10V SO-8 RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • • • S1 1 8 D1 Super High Dense Cell Design for Extremely G1 2

Si4430BDY

Abstract: Si4430BDY-T1-E3
Contextual Info: Si4430BDY Vishay Siliconix New Product N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ) • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS 24 COMPLIANT SO-8 D S 1 8 D

FT1034BMH-1

Contextual Info: FT1034-1.2/FT1034-2.5 LT1034-1.2/LT1034-2.5 Micropower Dual Reference Micropower Dual Reference Description U Features • ■ ■ ■ ■ Guaranteed 20 ppm/°C Drift Guaranteed 40 ppm/°C Drift SO-8 Package 20µA to 20mA Operation (1.2V) Dynamic Impedance: 1Ω

F30JC

Contextual Info: Surface-Mount Devices J Schottky Barrier Diodes Single M1F A b so lu te M axim um R atings 1F E lectrical C ha ra cte ristics e\i 8\a 8]c (m ax) (m ax) (m ax) [m A ] [ “C /W ] [ ”C /W ] [°C /W ] 1.1 1 23 108 1.6 2.5 Vf Type No. lo Conditions Tc I fsm

SI4430BDY-E3

Contextual Info: Si4430BDY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.006 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFETS D 100% Rg Tested Qg (Typ) 24 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D

SI4430BDY-E3

Abstract: S3550 SI4430BDY-T1-E3 Si4430BDY
Contextual Info: Si4430BDY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.006 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFETS D 100% Rg Tested Qg (Typ) 24 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D

Si7856ADP-T1

Contextual Info: Si7856ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0037 @ VGS = 10 V 25 0.0048 @ VGS = 4.5 V 23 Qg (Typ) 39 PowerPAK SO-8 RoHS* COMPLIANT • DC/DC Converters • Synchronous Rectifiers

Contextual Info: Si7886ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.040 @ VGS = 10 V 25 0.0048 @ VGS = 4.5 V 23 Qg (Typ) 47 PowerPAK SO-8 COMPLIANT • DC/DC Converters • Synchronous Rectifiers 5.15 mm 1 Available

INTEL 82360

Abstract: intel 82380 82380 lm 3361 82380 dma 82380-16 intel 80386 bus architecture pipeline architecture for 80386 82384 82380-20
Contextual Info: INTEL CORP -CUP/PRPHLS} h?£ 1 • 482^175 0151355=) in te l 82380 HIGH PERFORMANCE 32-BIT DMA CONTROLLER WITH INTEGRATED SYSTEM SUPPORT PERIPHERALS ■ High Performance 32-Bit DMA Controller — SO MBytes/sec Maximum Data Transfer Rate at 25 MHz — 8 Independently Programmable

Contextual Info: Si7886ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.040 @ VGS = 10 V 25 0.0048 @ VGS = 4.5 V 23 Qg (Typ) 47 PowerPAK SO-8 COMPLIANT • DC/DC Converters • Synchronous Rectifiers 5.15 mm 1 Available

Si7336ADP

Abstract: Si7336ADP-T1-E3 Si7336ADP-T1-GE3 Si7336ADP-T1
Contextual Info: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server

Contextual Info: Si7358ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0042 at VGS = 10 V 23 0.0059 at VGS = 4.5 V 20 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFET RoHS COMPLIANT

Contextual Info: Si7886ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0040 at VGS = 10 V 25 0.0048 at VGS = 4.5 V 23 Qg (Typ) 47 PowerPAK SO-8 COMPLIANT • DC/DC Converters • Synchronous Rectifiers 5.15 mm 1 Available

Si7358ADP

Abstract: Si7358ADP-T1-E3
Contextual Info: Si7358ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0042 at VGS = 10 V 23 0.0059 at VGS = 4.5 V 20 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFET RoHS COMPLIANT

SI7336ADP-T1-GE3

Abstract: Si7336ADP Si7336ADP-T1-E3
Contextual Info: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server

Contextual Info: Si7856ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0037 at VGS = 10 V 25 0.0048 at VGS = 4.5 V 23 Qg (Typ.) 39 PowerPAK SO-8 • Halogen-free available Available • TrenchFET Power MOSFET RoHS*

Contextual Info: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server