SO 42 P Search Results

S-8120B

Abstract: SC82AB
Contextual Info: SENSOR SENSOR LINE-UP P W af er SO in 8p in DI P -3 8p T23 SO SC -8 2 AB Package Page S-8110A 42 S-8120A 42 S-8110B 42 S-8120B 42 Receiver IC for infrared Remote Controller S-8270A 43 Linear image sensor IC for "contact image sensor" S-8603AWI 43 S-8631AWI

hy51v18164b

Contextual Info: -HYUNDAI HYM5V64124A Q-Series SO DIMM 1M x 64-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V64124Ais a 1M x 64-bit ED O mode C M O S DRAM module consisting of four HY51V18164B in 42/42 pin SO J or 44/50 pin TSOP-II and one 2048 bit EEPR O M on a 144 Zig Zag Dual pin glass-epoxy printed circuit

BAR43

Contextual Info: BAR 42 BAR 43, A, C, S SMALL SIGNAL SCHOTTKY DIODES # BAR42/BAR43 BAR43A w DESCRIPTION General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. BAR43C BAR43S SO T-23 Plastic ABSOLUTE RATINGS (limiting values) Parameter

Contextual Info: II 12 9 10 rrEM NO. COLOR X X 43091-0201 43091-0202 NATURAL BLUE O B SO LETE X 43091-0203 RED O B SO LETE 7 8 6 1 43091 2 3 | LEGEND 43091-02* CIRCUIT SIZE UNINTELLIGENT SEQUENCE NO.t - £ .213 SQ. 5.4 I J ^ -M» • ''J-j > ■ = y ■ 42 (10.7) ■

u24c

Contextual Info: USB0803C f * Scollitele, 42 thru MW— H 8700 E. Thomas Road Scottsdale, AZ 85252 Tel: 602 941-6300 Fax: (602) 947-1503 USB0824C TVSarray Series DESCRIPTION (500 watt) This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged in an SO-8 configuration giving protection to 2 Bidirectional data or interface lines. It is designed

Contextual Info: TABLE OF CONTENTS S en so r Capabilities 2-3 LO I •^T T rim m e r Accessories Dials 6-9 T rim m e rs 10-15 Single-Turn P o te n tio m e ters 16-31 Multi-Turn P o te n tio m e ters 32-41 S en so rs 42-43 S w itc hes 44-45 N u m e ric al Index 46-47 48 E le m e n t C om parison C hart

Contextual Info: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive

Contextual Info: SMDA03C-4-2 f* Scollitele, 42 thru MW— H SMDA24C-4-2 8700 E. Thomas Road Scottsdale, A Z 85251 Tel: 602 941-6300 Fax: (602) 947-1503 TVSarray Series DESCRIPTION (300 watt) This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged in a SO-8 configuration giving protection to 4 Bidirectional data or interface lines. It is

Si7194DP

Abstract: Si7194DP-T1-GE3 si7194
Contextual Info: New Product Si7194DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.002 at VGS = 10 V 60 0.0025 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 42 nC PowerPAK SO-8 RoHS COMPLIANT • Low-Side in CPU and GPU core DC/DC

Si7846DP

Abstract: Si7846DP-T1-E3
Contextual Info: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive

Contextual Info: New Product Si7194DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.002 at VGS = 10 V 60 0.0025 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 42 nC PowerPAK SO-8 RoHS COMPLIANT • Low-Side in CPU and GPU core DC/DC

Contextual Info: TAIW AN s TSM3424 SEMICONDUCTOR 30V N-Channei MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCTS ÜMMARY P in D e fin itio n : VDS{V 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source RDS on){lTlÛ) Id (A) 30 @ VGS= 10V 6.7 42 @ V gs = 4.5V 5.7 30 1 23 Features

Contextual Info: Data Sheet 16 Amp PLASTIC SILICON RECTIFIERS FR1601. . . 1606 Series Semiconductor Description Mechanical Dimensions JEDEC T0-22QAB .14,0 .10 \ .39 .42 .too k - so - h +_ U- .225 Min .620 h 1— .25 T1 — *\ F e a tu re s • LO W C O ST ■ D IF F U S E D J U N C T IO N

TSM3433

Abstract: MARKING ato
Contextual Info: E TAIWAN TSM3433 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 V DS (V) Pin D e fin itio n : 854 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features RDS(on)<mÛ) Id (A) 42 @ V GS = -4.5V

WS 78L05

Abstract: QT60161B Qmatrix 1050C 78L05 BAV99 QT60161 QT60161B-AS spi CONTROLLED KEYPAD SCAN IC TQFP44 footprint
Contextual Info: LQ QT60161B 16 KEY QMatrix KEYPANEL SENSOR IC CS1B CS1A CS0B CS0A Vdd Vss LED DRDY VREF SO SS MOSI MISO 1 2 44 43 42 41 40 39 38 37 36 35 34 33 32 CS2A CS2B SCK RST Vdd 3 4 5 31 30 29 CS3A CS3B Aref Vss XTO 6 7 28 27 AGnd AVdd XTI RX 8 9 26 25 YS3 YS2

BAT53

Abstract: BAT 43 Schottky Diodes VF 579 D81 marking MARKING D82 BA579C a3020 BA 30 C Thomson-CSF diodes BAR43C
Contextual Info: ^ schottky diodes diodes schottky th o m so n -csf Types N N BAT BAT BAR BAR BAR 17 53 18 42 43 N BAR 43 A Characteristics at 25 ° C Maxim um ratings @ Vr Vp C @ •F Vr m 'F |r V (mA) max (uA) (V) min max (V) 4 10 70 30 30 30 30 30 100 100 0,25 0,1 0,2

Z51 zener diode

Abstract: Si3015-FS T1-6 Si3015FS schematic diagram of aoc monitor SI2414-FT C193 CTR21 Si2414 Si2433
Contextual Info: Si2456/33/14 V.9 0 , V.3 4 , V.3 2 B I S I SO M O D E M C H I PS E T WITH I N T E G R A T E D G L O B A L DAA Features Data modem formats Integrated DAA ITU-T, Bell 300 bps up to 56 kbps V.42, V.42bis, MNP2-5 Automatic rate negotiation Over 5000 V capacitive isolation

schematic diagram of aoc monitor

Abstract: Si2457-FS R1Z regulator Si2457 Si2404 Si2415 Si2434 Si3008 AT56000 128-level
Contextual Info: Si2457/34/15/04-Si3008 V.90, V.34, V. 32 B I S , V.22 B I S I SO M O D E M WITH I N T E G R A T E D DAA Features Data modem formats Integrated DAA ITU-T, Bell 300 bps up to 56 kbps V.21,V.22, V.29 Fast Connect V.42, V.42bis, MNP2-5 Automatic rate negotiation

zener diode c531

Abstract: BZT84C43 Si2434 SI2457-C-FT u39 c531 schematic diagram of aoc monitor ISOmodem sc5 relay 12 V MMS 212 RELAY TRANSISTOR FS 2025
Contextual Info: Si2457/34/15/04 V.90, V.34, V. 32 B I S , V.22 B I S I SO M O D E M WITH G L O B A L DAA Features Data modem formats Integrated DAA ITU-T, Bell 300 bps up to 56 kbps V.21,V.22, V.29 Fast Connect V.42, V.42bis, MNP2-5 Automatic rate negotiation Over 6000 V Capacitive isolation

Contextual Info: VZÄ WHITE /MICROELECTRONICS WPN642106GM0VG 16M BYTE 2Mx64 Synchronous DRAM P R ELIM IN A R Y (3.3V Supply) SO-DIM M MODULE * GENERAL DESCRIPTION FEATURES • M a x im u m fre q u e n c y = 1 0 0 M H z (tcc=1 0ns) T h e W h ite M ic ro e le c tro n ic s W P N 6 42 1 0 B G 1 -1OVG is a 2 M x 64

Contextual Info: 100 SO GO 50 40 30 20 12 PIN 3 9.2 3 1 .2 2 3 .2 19. 2 15. 2 11.2 7 .2 4. 0 A 40. 32. 24. 20. 16. 12. 8. 5. B 5 5 5 5 5 5 5 3 42. 34. 26. 22. 18. 14. 10. 7. C 9 9 9 9 9 9 9 7 45. 0 37. 0 29. 0 25. 0 21. 0 17. 0 1 3.0 9. 0 D 43. 35. 27. 23. 19. 15. 11. 8. E

Contextual Info: Pos i \ i on position Re i he row w x Q B I D Q Q B I D D Q B I D D Q Q D D Q Q w 37,9* 10:1 0.1 Querschni M der Lot anschl usse: Cr oss- Sect i on of so l d er t er mi na t i on s. 0, 42 Gekr opf ter Kontakt an beiden Enden des St eckver bi nder s Reihen a - e : A = 0,11 - 0, 13 mm2

Contextual Info: 1. D i m e n s i o n s : ~ 0 .5 0 3. E l e c t r i c a l so la tio n Max —•LO S p e c i f i c a t i o n s :@25°C Vo ltag e: 1500 T u rn s Ratio: 1 - -1 5 - 1 4 = 1:2 .42 C T T u rn s Ratio: (6 — — 1 0 —9) = 1 :2.4 2C T O M 0 .0 3 0 0.020 1 0.01 6

Contextual Info: Pos i t i on p o s itio n — 22 CNI X m Re i he row 21x2 =42 Re i he row w -5 i^ i w 10:1 + Q u e r s c h n i t t der L b t a n s c h l i i s s e : Cross-S ection o f so ld e r te rm in a tio n s . G e k r o p f t e r Kont ak t an bei den Enden des S t e c k v e r b i n d e r s