TCTH011AE
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Toshiba Electronic Devices & Storage Corporation
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type |
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TCTH022AE
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Toshiba Electronic Devices & Storage Corporation
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function |
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TCTH021AE
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Toshiba Electronic Devices & Storage Corporation
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type |
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TCTH012AE
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Toshiba Electronic Devices & Storage Corporation
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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TK190U65Z
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Toshiba Electronic Devices & Storage Corporation
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MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL |
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