SN 8400 N Search Results

olin 7025

Abstract: 7025 alloy lead frame CDA 194 X10-4 eftec-64t Eftec 64t resistivity table sn 8400 PHYSICAL CONSTANTS OF IC PACKAGE MATERIALS
Contextual Info: Physical Constants of IC Package Materials 5 Table 5-1 through Table 5-3 list typical values for selected properties of materials used in IC packages. Table 5-1. Case Material Characteristics Properties Density Modulus of Elasticity Tensile Strength Units

ISO 8820-3

Abstract: DIN 72581 040204 SAE 1888
Contextual Info: BLADE-TYPE FUSES WICKMANN FK3 / No. 169.6885 ISO 8820, 32V 32V, T Specifications Time-Current Characteristic Packaging Code and Info Time Lag T 2: Bulk (1000 pcs.) Standards Materials DIN 72581/3E SAE J 1888 ISO 8820-3 UL 248 Body: Element: Cover: Terminals:

sn 8400

Abstract: Pudenz ISO 8820
Contextual Info: BLADE-TYPE FUSES WICKMANN FK3 / No. 169.6885 formerly 169 ISO 8820, 32V 32V, T Specifications Time-Current Characteristic Packaging Time Lag T 2: Bulk (1000 pcs.) Standards Materials DIN 72581/3E SAE J 1888 ISO 8820 Body: Element: Cover: Terminals: Features

SAE 1888

Abstract: 95 marking
Contextual Info: BLADE-TYPE FUSES WICKMANN FK3 / No. 169 TOE / No. 165 ISO 8820, 32V/58V 32V/58V, T Specifications Time-Current Characteristic Packaging Time Lag T 100: Bulk (1000 pcs.) Standards Materials DIN 72581/3E SAE J 1888 ISO 8820 UL 248 Body: Element: Cover: Terminals:

SMD marking 1N3

Abstract: marking 1N3 smd marked rc HFQ02-5N9 sn 8400
Contextual Info: RoHS High Frequency, High Q Chip Inductor Dimensions: HFCQ02 Inches mm 0.012±0.001 (0.30±0.03) 0.006±0.002 (0.15±0.05) 0.024±0.001 (0.60±0.03) 0.012±0.001 (0.30±0.03) Allied Part Number HFQ02-0N6_-RC HFQ02-0N7_-RC HFQ02-0N8_-RC HFQ02-0N9_-RC HFQ02-1N0_-RC

TO-238

Abstract: sn 8400
Contextual Info: I X Y S 1ÔE CORP OOOOtaSS D 5 'T - Z ° \ A S> □IXYS A D V A N C E TEC H N IC AL DATA SH EET* December 1988 DATA SH EET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, H D M O S™ Family FEATURES:_

IXFN64N20

Abstract: 1301C
Contextual Info: I X Y S CÔRP 1ÖE D 4bôb5Hb QOQObS? =1 - 3 □IXYS DATA SH EET NO. 1301C A D V A N C E T E C H N IC A L DATA S H E E T * HiPerFET Power MOSFETs ^ 5 December 1988 IXFN64N20 N-Channel High dv/dt, Low trr, H D M O S ™ Family 64A FEATU RES:_

SUMIKA

Abstract: PDB1003 PDB1003100MZF PDB1003101MZF PDB1003150MZF PDB1003151MZF PDB1003220MZF PDB1003221MZF PDB1003330MZF PDB1003331MZF
Contextual Info: SMD POWER INDUCTORS PDB1003 SERIES 1. PART NO. EXPRESSION : PDB1003101MZF a (b) (c) (d)(e)(f) (a) Series code (d) Tolerance code : M = ±20% (b) Dimension code (e) X, Y, Z : Standard part (c) Inductance code : 101 = 100uH (f) F : Lead Free 2. CONFIGURATION & DIMENSIONS :

RBS 6401

Abstract: scn8048
Contextual Info: Signefics SCN8400 Series Single-Chip 8-Bit Microcontroller Product Specification Microprocessor Products PIN CONFIGURATION DESCRIPTION FEATURES The SCN84XX family of microcontrollers is fabricated in NMOS. The family con­ sists of five devices. Each version has

B66289G0000X187

Abstract: B66289 B66289G0000X149 B66289G0000X192 B66289G0000X197 3818 E N97 FERRITE CORE Epcos N87 ferrite
Contextual Info: Ferrites and accessories EELP 38, EILP 38 Core set with and without clamp recess Series/Type: Date: B66289G, B66289P, B66459G, B66459P September 2006 Data Sheet  EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.

ferroxcube 3D3

Abstract: EP13-3E27 coil former CSH-EP13-2S-10P EP13-3D3 ferroxcube sn 8400 3B46 CSH-EP13-1S-10P EP13 Coil
Contextual Info: FERROXCUBE DATA SHEET EP13 EP cores and accessories Supersedes data of February 2002 2004 Sep 01 Ferroxcube EP cores and accessories EP13 CORE SETS Effective core parameters SYMBOL PARAMETER VALUE Σ I/A core factor (C1) 1.24 mm−1 Ve effective volume 472

kb200

Abstract: KC100
Contextual Info: 05459 K SERIES Only One Name Means ProTek’Tion HIGH POWERED TVS COMPONENT APPLICATIONS FIGURE 1 POWER DERATING CURVE • DC & AC Applications • Remote Transmission Lines • Industrial Wiring 100 Peak Pulse Power 10/1000µs 80 % Of Rated Power FEATURES

umf1009

Abstract: SAA1136 PCF8568 TSA5511 pcf8200 SAA9020 8048 microcontroller i2c tv receiver schematic diagram PHILIPS SL00949 application tsa5511
Contextual Info: INTEGRATED CIRCUITS AN168 The I2C serial bus: theory and practical consideration using Philips low-voltage PCF84Cxx and PCD33xx µC families Author: Carl Fenger Philips Semiconductors 1988 Dec Philips Semiconductors Application note The I2C serial bus: theory and practical consideration using

Keithley 2400

Abstract: HP4291A L0805
Contextual Info: Accu-L SMD High-Q RF Inductor 2 10 nH Inductor Top View ACCU-L® TECHNOLOGY The Accu-L® SMD Inductor is based on thin-film multilayer technology. This technology provides a level of control on the electrical and physical characteristics of the component which

HP4291A

Abstract: L0805
Contextual Info: 2 Thin-Film Technology Accu-L Thin-Film RF/Microwave Inductors 25 Accu-L® SMD High-Q RF Inductor 2 10 nH Inductor Top View ACCU-L® TECHNOLOGY The Accu-L® SMD Inductor is based on thin-film multilayer technology. This technology provides a level of control on the

B65621

Abstract: B65621J0000R048 B65621J0250A048 B65621J0630A048 B65621J3150K048 B65623A0001X000 N48 transformer core ferrite n48
Contextual Info: Ferrites and accessories P 41 x 25 Core and accessories Series/Type: Date: B65621, B65623 September 2006 Data Sheet  EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.

6230h

Contextual Info: INTERNATIONAL RECTIFIER II O R DËT| 4ÖS54S2 D007b4S 0 | T 02 Data Sheet No. PD-3.124 IINTERNATIONAL r e c t i f i e r S23D & S23DH S E R IE S 800-200 VOLTS R A N G E 340 A M P RM S, RIN G A M P LIF Y IN G GATE PH ASE CO N TRO L TYPE STUD M OUNTED SCRs VOLTAGE RATINGS

transistor cms 6BW

Abstract: g2v2 relay 4 digit 7 segment calculator lcd display pin BIT 31936 g2v2 transistor 5bw A7102A 6BW 87 automatic dialer sd 7402
Contextual Info: DEFINITY Enterprise Communications Server and System 75 and System 85 Terminals and Adjuncts Reference 555-015-201 Comcode 108603994 Issue 11 December 1999 Copyright  1999, Lucent Technologies All Rights Reserved Printed in USA Notice Every effort was made to ensure that the information in this book was

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

X-band Gan Hemt

Abstract: x-band mmic lna TIC 1268 BiCmos 7400 FMA219-000SQ two bjt bc 107 A219 FMA219 MIL-HDBK-263 SiGe HBT GAIN BLOCK MMIC AMPLIFIER
Contextual Info: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output

Contextual Info: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output

ferrite TRANSFORMER calculation

Abstract: Al value of ferrite core ferrite core transformer design EELP 22 B66293 B66293G0000X187 B66293P0000X187 ferrite n87 transformer 705k1 B-662
Contextual Info: Ferrites and accessories EELP 58, EILP 58 Core set without clamp recess Series/Type: Date: B66293G, B66293P September 2006 Data Sheet  EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.

Contextual Info: Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

E41429

Abstract: sumikon 2500 07.311 PM-9630 Sumikon B65843A0063A038 B65843A0100A038 B65843A0160B038 B65843A0200B038 B65843A0250J038
Contextual Info: Ferrites and accessories EP 13 Core and accessories Series/Type: Date: B65843A, B65844 September 2006 Data Sheet  EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.