SN 7600 N Search Results

Contextual Info: LIEFERVORSCHRIFT SPECIFICATION FRIWO FRIWO Ge rät ebau GmbH V o n - L i e b i g - S t r . 11 D - 4 8 3 4 6 Ostbevern Tel.: 0 2 5 3 2 / 8 1 - 0 Fax: 0 2 5 3 2 / 8 1 - 1 1 2 h t t p : / / w w w . friwo.de PP3 EU - 5V Firmo / : Distribution Company Ge r ät e ty p / Typ

47NF63V

Contextual Info: LIEFERVORSCHRIFT SPECIFICATION FRIWO Ge rät ebau GmbH V o n - L i e b i g - S t r . 11 D - 4 8 3 4 6 Ostbevern Tel.: 0 2 5 3 2 / 8 1 - 0 Fax: 0 2 5 3 2 / 8 1 - 1 1 2 h t t p : / / w w w . friwo.de PP3 U K -12V Firmo / Distribution Company Z e ic h n u n g s - N r. / P o r t - N o .

Contextual Info: Or der i ngQuant i t yandPacki ngFor m 煙煙煙煙煙煙煙煙煙 Pl easemakeyouror der s ‘mo : r et hanI nnerBoxQuant i t i es’and ‘amul t i pl eofeachPacki ngUni t ’ Package AX057 Zener s SI DACs AX06 Var i s t or s Zener s SI DACs AX078 Di odes

V23154-D0721-B110

Abstract: V23154-N4720 V23154-N4721-C110 V23162-A0721-B104 V23154 relay v23154D719F104 V23154D720C410 V23154D720C110 V23154-D719-F104 V23154
Contextual Info: AXICOM Telecom-, Signal and RF Relays Cradle Relay N V23154 / V23162 108-98012 • Nov. 07 • Rev. C • ECOC: JM10 AXICOM Telecom-, Signal and RF Relays 108-98012 Rev. C Cradle Relay N V23154/V23162 Disclaimer While Tyco Electronics has made every reasonable effort

X2Y Capacitor

Abstract: CL10B222 b222m
Contextual Info: 1/2 SPECIFICATION • Supplier : Samsung electro-mechanics • Part Number : CL10B222MC6NXNC • Product : Multi-layer Ceramic Capacitor • Discription : Cap, 2.2nF, 100V, ±20%, X7R, 0603 A. Samsung Part Number CL ① ① Series ② Size ③ Dielectric

SAMSUNG CL series date code

Contextual Info: 1/2 SPECIFICATION • Supplier : Samsung electro-mechanics • Part Number : CL10B223MB6NXNC • Product : Multi-layer Ceramic Capacitor • Discription : Cap, 22nF, 50V, ±20%, X7R, 0603 A. Samsung Part Number CL ① ① Series ② Size ③ Dielectric ④ Capacitance

CL10B472

Abstract: 10b472
Contextual Info: 1/2 SPECIFICATION • Supplier : Samsung electro-mechanics • Part Number : CL10B472MC6NXNC • Product : Multi-layer Ceramic Capacitor • Discription : Cap, 4.7nF, 100V, ±20%, X7R, 0603 A. Samsung Part Number CL ① ① Series ② Size ③ Dielectric

CL31B

Contextual Info: 1/2 SPECIFICATION • Supplier : Samsung electro-mechanics • Part Number : CL31B473MCDNXNE • Product : Multi-layer Ceramic Capacitor • Discription : Cap, 47nF, 100V, ±20%, X7R, 1206 A. Samsung Part Number CL ① ① Series ② Size ③ Dielectric

date code mlcc samsung

Abstract: 10nF 50V X7R samsung CL10B1 CL10B103MB6NXNC SAMSUNG CL series date code
Contextual Info: 1/2 SPECIFICATION • Supplier : Samsung electro-mechanics • Part Number : CL10B103MB6NXNC • Product : Multi-layer Ceramic Capacitor • Discription : Cap, 10nF, 50V, ±20%, X7R, 0603 A. Samsung Part Number CL ① ① Series ② Size ③ Dielectric ④ Capacitance

Contextual Info: Page:50 発注数量と梱包形態一覧表 パッケージ Fi g. 仕様 コード 5060 AX057 1 5070 4000 4060 ツェナー SI DAC 4061 4070 2, 3 AX06 5000 5060 バリスタ 5061 5070 4000 ツェナー 4060 SI DAC 4070 5 AX078 5000 ダイオード 5060 5070

cl10B102

Abstract: 10nF 100V Samsung date code mlcc samsung CL10B1
Contextual Info: 1/2 SPECIFICATION • Supplier : Samsung electro-mechanics • Part Number : CL10B102MC6NXNC • Product : Multi-layer Ceramic Capacitor • Discription : Cap, 1nF, 100V, ±20%, X7R, 0603 A. Samsung Part Number CL ① ① Series ② Size ③ Dielectric ④ Capacitance

100nF 50V X7R samsung

Abstract: tcc 1206 X7R 104 3216 B 100NF samsung CL31B
Contextual Info: 1/2 SPECIFICATION • Supplier : Samsung electro-mechanics • Part Number : CL31B104MBDNXNE • Product : Multi-layer Ceramic Capacitor • Discription : Cap, 100nF, 50V, ±20%, X7R, 1206 A. Samsung Part Number CL ① ① Series ② Size ③ Dielectric

SMD marking 1N3

Abstract: marking 1N3 smd marked rc HFQ02-5N9 sn 8400
Contextual Info: RoHS High Frequency, High Q Chip Inductor Dimensions: HFCQ02 Inches mm 0.012±0.001 (0.30±0.03) 0.006±0.002 (0.15±0.05) 0.024±0.001 (0.60±0.03) 0.012±0.001 (0.30±0.03) Allied Part Number HFQ02-0N6_-RC HFQ02-0N7_-RC HFQ02-0N8_-RC HFQ02-0N9_-RC HFQ02-1N0_-RC

100nF 50V X7R samsung 1608

Abstract: X7R 100nF 0603 samsung CL10B104 CL10B104MB6NXNC 100nF 50V X7R samsung
Contextual Info: 1/2 SPECIFICATION • Supplier : Samsung electro-mechanics • Part Number : CL10B104MB6NXNC • Product : Multi-layer Ceramic Capacitor • Discription : Cap, 100nF, 50V, ±20%, X7R, 0603 A. Samsung Part Number CL ① ① Series ② Size ③ Dielectric

SLA7220

Abstract: SLA7490
Contextual Info: S-M 0 S SYSTEMS INC 5bE D • 7^32^0^ 000140b 374 H S H O SLA7000 CMOS HIGH SPEED GATE ARRAY • • • • High Speed Silicon Gate CMOS Technology TTL and CMOS I/O Compatible High Output Drive Capability Gate Densities from 1,632 to 16,250 Gates ■ DESCRIPTION

NEC 88n055

Abstract: D1414 NP88N055CHE NP88N055DHE NP88N055EHE NP88N055EHE-E1-AY NP88N055EHE-E2-AY NP88N055KHE NP88N055KHE-E1-AY NP88N055KHE-E2-AY
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: S-N 0 S S Y S T E M S INC Sb E J> • 7 ^ 3 2 ^ 0 “? O Q G l S M b 07T H S M O SSC2000 Series CMO^ LOW VOLTAGE STANDARD CELL • Low Voltage Operation at 0.9 V min. • Built-in Level Shift Circuit • Up to 11,000 gates ■ DESCRIPTION The SSC2000 Series CMOS standard cell, to which low-threshold manufacturing process is applied, enables low

UGE3126AY4

Abstract: si-e9000
Contextual Info: UGE 3126 AY4 High Voltage Rectifiers Hochspannungsgleichrichter VRRM VV RMS VdT V V V 24000 9000 4000 Standard VRRM = 24000 V VdT = 4000 V IF(AV)M = 2.0 A Power Designation Anode Types UGE 1112 AY4 Si-E 9000 / 4000-0.7 Kathode Symbol Test Conditions IF(RMS)

1608G

Abstract: 1005GC2T1N5S00 1608GC2T27N 1608GC2T33N 1608GC2T8N2 HP6612C 1005GC2T1N 1608GC2T1N5S00 1608GC2T2N2S00 1608GC2T6N8
Contextual Info: MULTILAYER CERAMIC CHIP INDUCTORS 1005 0402 GC / 1608(0603) GC Series Features 1. 2. 3. 4. Designed for high frequency RF application. High self resonant frequency(SRF)and excellent Q. Multilayered ceramic construction provides high reliability. Miniature size : 1005(0402) / 1608(0603)

Contextual Info: UGE 0221 AY4 High Voltage Rectifiers Hochspannungsgleichrichter VRRM VV RMS VdT V V V 4800 1750 775 Standard VRRM = 4800 V VdT = 775 V IF(AV)M = 10.2 A Power Designation Anode Types UGE 0221 AY4 Si-E 1750 / 775-4 Kathode Symbol Test Conditions IF(RMS) IF(AV)M

7472 ci

Abstract: uge 1112 AY4
Contextual Info: UGE 1112 AY4 High Voltage Rectifiers Hochspannungsgleichrichter VRRM VV RMS VdT V V V 8000 3000 1300 Standard VRRM = 8000 V VdT = 1300 V IF(AV)M = 4.2 A Power Designation Anode Types UGE 1112 AY4 Si-E 3000 / 1300-2.5 Kathode Symbol Test Conditions IF(RMS)

Dioden Tabelle

Abstract: UGE 7.5
Contextual Info: UGE 0421 AY4 High Voltage Rectifiers Hochspannungsgleichrichter VRRM VV RMS VdT V V V 3200 1125 500 Standard VRRM = 3200 V VdT = 500 V IF(AV)M = 22.9 A Power Designation Anode Types UGE 0421 AY4 Si-E 1125 / 500-6 Kathode Symbol Test Conditions IF(RMS) IF(AV)M

Contextual Info: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output